We considered the oxygen diffusivity around a conductive filament of resistive switching oxides, with the aim of designing material appropriate for highly reliable non-volatile memory. Both theoretical and experimental analyses were performed for this consideration. The theoretically obtained oxygen chemical potential difference, which works as a driving force for diffusion, significantly depends on a material. Then, we experimentally confirmed that the oxygen diffusion behaviors vary greatly depending on the chemical potential differences.

To improve the high voltage performance of AlGaN/GaN heterojunction field effect transistors (HFETs), we have fabricated AlGaN/GaN HFETs with p-GaN epi-layer on sapphire substrate with an ohmic contact to the p-GaN (p-sub HFET). Substrate bias dependent threshold voltage variation (VT-VSUB) was used to directly determine the doping concentration profile in the buffer layer. This VT-VSUB method was developed from Si MOSFET. For HFETs, the insulator is formed by epitaxially grown and heterogeneous semiconductor layer while for Si MOSFETs the insulator is amorphous SiO2. Except that HFETs have higher channel mobility due to the epitaxial insulator/semiconductor interface, HFETs and Si MOSFETs are basically the same in the respect of device physics. Based on these considerations, the feasibility of this VT-VSUB method for AlGaN/GaN HFETs was discussed. In the end, the buffer layer doping concentration was measured to be 21017 cm-3, p-type, which is well consistent with the Mg concentration obtained from secondary ion mass spectroscopy (SIMS) measurement.

We prepared HfO2 films by atomic layer deposition (ALD) on three kinds of silicon substrate surfaces (chemical oxide, HF-last surface and thermal oxide), and characterized their morphologies, structures, compositions, and crystallinities by physical analysis. The results revealed that the as-deposited HfO2 films consisted of nano-crystalline particles with a different crystalline system from that of the annealed films. The size of the nano-crystalline particles on the film on the chemical oxide was smaller than those on the other surfaces. The reason is thought to be the difference in OH concentration on the substrate surface. The predominant crystalline phases of all HfO2 films were monoclinic after annealing. Moreover, the film prepared on the chemical oxide had the smoothest surface after annealing. However, island structures with grain boundaries developed in the films on the other surfaces.

This paper evaluates the performance of TCP over ATM by simulation studies to clarify its applicability to high-speed WANs. We compared the performance of TCP over ABR with that of TCP over UBR, and TCP over UBR with Early Packet Discard (EPD). As for TCP over UBR, TCP has all responsibilities for end-to-end performance. In this case, cell loss at the ATM layer degrades TCP performance. Optimum tuning of TCP parameters may mitigate this degradation problem, but cannot solve it. Using EPD with UBR can fairly reduce useless transmission of corrupted packets and improve TCP performance, but still have the problem on fairness. As a result, TCP over ABR was proved to be the most effective as long as it suppressed cell loss. It was also proved that, if we want to extract best performance by TCP over ABR, we need to choose TCP parameters such as window size or timer granularity, so that ABR rate control does not interact with TCP window control and retransmission control.

We investigate performance of TCP protocol over ATM networks by using a simulation technique. As the ATM layer, we consider (1) rate-based control of the ABR service class and (2) an EPD (Early Packet Discard) technique applied to the UBR service class and (3) and EPD with per-VC accounting for fairness enhancement applied to the UBR service class. In comparison, we adopt a multi-hop network model where the multiple ATM switches are interconnected. In such a network, unfairness among connections is a possible cause of the problem due to differences of the number of hops and/or the round trip times among connections. Simulation results show that the rate-based control method of ABR achieves highest throughput and best fairness in most circumstances. However, the performance of TCP over ABR is degraded once the cell loss takes place due to the inappropriate control parameter setting. To avoid this performance degradation, we investigate the appropriate parameter set suitable to TCP on ABR service. As a result, parameter tuning can improve the performance of TCP over ABR, but limited. We therefore consider TCP over ABR with EPD enhancement where the EPD technique is incorporated into ABR. We last consider the multimedia network environment, where the VBR traffic exists in the network in addition to the ABR/UBR traffic. By this, we investigate an applicability of the above observations to a more generic model. Through simulation experiments, we find that the similar results can be obtained, but it is also shown that parameters of the rate-based congestion control must be chosen carefully by taking into account the existence of VBR traffic. For this, we discuss the method to determine the appropriate control parameters.

Isotope dilution secondary ion mass spectroscopy (ID-SIMS) using 30Si as a spike is investigated as a quantitative analysis method for trace amounts of Si. For a standard solution of Si, the relateve standard deviation of results using this method is 5% for 0.2 µg Si, and the determination lower limit is 18 ng. Using this method, the amount of Si deposited on the Ge(100) surface by the self-limited adsorption of SiH2Cl2 is determined to be about 1.00.2 monolayer.