We considered the oxygen diffusivity around a conductive filament of resistive switching oxides, with the aim of designing material appropriate for highly reliable non-volatile memory. Both theoretical and experimental analyses were performed for this consideration. The theoretically obtained oxygen chemical potential difference, which works as a driving force for diffusion, significantly depends on a material. Then, we experimentally confirmed that the oxygen diffusion behaviors vary greatly depending on the chemical potential differences.
Takeki NINOMIYA
Panasonic Corporation, Graduate School of Engineering, Naoya University
Zhiqiang WEI
Panasonic Corporation
Shinichi YONEDA
Panasonic Corporation
Kenji SHIRAISHI
Graduate School of Engineering, Naoya University
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Takeki NINOMIYA, Zhiqiang WEI, Shinichi YONEDA, Kenji SHIRAISHI, "Theoretical and Experimental Approaches to Select Resistive Switching Material" in IEICE TRANSACTIONS on Electronics,
vol. E98-C, no. 1, pp. 62-64, January 2015, doi: 10.1587/transele.E98.C.62.
Abstract: We considered the oxygen diffusivity around a conductive filament of resistive switching oxides, with the aim of designing material appropriate for highly reliable non-volatile memory. Both theoretical and experimental analyses were performed for this consideration. The theoretically obtained oxygen chemical potential difference, which works as a driving force for diffusion, significantly depends on a material. Then, we experimentally confirmed that the oxygen diffusion behaviors vary greatly depending on the chemical potential differences.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.E98.C.62/_p
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@ARTICLE{e98-c_1_62,
author={Takeki NINOMIYA, Zhiqiang WEI, Shinichi YONEDA, Kenji SHIRAISHI, },
journal={IEICE TRANSACTIONS on Electronics},
title={Theoretical and Experimental Approaches to Select Resistive Switching Material},
year={2015},
volume={E98-C},
number={1},
pages={62-64},
abstract={We considered the oxygen diffusivity around a conductive filament of resistive switching oxides, with the aim of designing material appropriate for highly reliable non-volatile memory. Both theoretical and experimental analyses were performed for this consideration. The theoretically obtained oxygen chemical potential difference, which works as a driving force for diffusion, significantly depends on a material. Then, we experimentally confirmed that the oxygen diffusion behaviors vary greatly depending on the chemical potential differences.},
keywords={},
doi={10.1587/transele.E98.C.62},
ISSN={1745-1353},
month={January},}
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TY - JOUR
TI - Theoretical and Experimental Approaches to Select Resistive Switching Material
T2 - IEICE TRANSACTIONS on Electronics
SP - 62
EP - 64
AU - Takeki NINOMIYA
AU - Zhiqiang WEI
AU - Shinichi YONEDA
AU - Kenji SHIRAISHI
PY - 2015
DO - 10.1587/transele.E98.C.62
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E98-C
IS - 1
JA - IEICE TRANSACTIONS on Electronics
Y1 - January 2015
AB - We considered the oxygen diffusivity around a conductive filament of resistive switching oxides, with the aim of designing material appropriate for highly reliable non-volatile memory. Both theoretical and experimental analyses were performed for this consideration. The theoretically obtained oxygen chemical potential difference, which works as a driving force for diffusion, significantly depends on a material. Then, we experimentally confirmed that the oxygen diffusion behaviors vary greatly depending on the chemical potential differences.
ER -