IEICE TRANSACTIONS on Electronics
Doping Effects on the Series Resistance of Conducting Polymers Diode
Summary :
A device structure for polymer Schottky diode, which has the glass chimney as a dopant reservoir enabling the reduction of series resistance without cathode corrosion, has been proposed. Doping with the acetonitrile solution of FeCl3 in the device resulted in the increase in the forward-bias current by one order of magnitude without notable increase in reverse-bias current, suggesting that the doping reduced the series resistance. It is found that the penetration speed depends on the solvents. Short time doping with the nitromethane solution of FeCl3 resulted in the increase by three orders of magnitude. However, doping for a long period yielded the considerable increase in the reverse-bias current due to the complete penetration of dopatn solution. When the upper opening of glass chimney of device is left opened and the sample after doping stored in air, the forward-bias current of the device reduced rapidly due to the undoping and/or degradation of polymer. It is possible to protect the degradation of device characteristics after doping, by sealing the chimney and storing the device in vacuum.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E87-C No.2 pp.152-157
- Publication Date
- 2004/02/01
- Publicized
- Online ISSN
- DOI
- Type of Manuscript
- Special Section PAPER (Special Section on Recent Progress of Organic Molecular Electronics)
- Category
- Nano-interfacial Properties
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Masayuki WADA, Kazuya TADA, Mitsuyoshi ONODA, "Doping Effects on the Series Resistance of Conducting Polymers Diode" in IEICE TRANSACTIONS on Electronics,
vol. E87-C, no. 2, pp. 152-157, February 2004, doi: .
Abstract: A device structure for polymer Schottky diode, which has the glass chimney as a dopant reservoir enabling the reduction of series resistance without cathode corrosion, has been proposed. Doping with the acetonitrile solution of FeCl3 in the device resulted in the increase in the forward-bias current by one order of magnitude without notable increase in reverse-bias current, suggesting that the doping reduced the series resistance. It is found that the penetration speed depends on the solvents. Short time doping with the nitromethane solution of FeCl3 resulted in the increase by three orders of magnitude. However, doping for a long period yielded the considerable increase in the reverse-bias current due to the complete penetration of dopatn solution. When the upper opening of glass chimney of device is left opened and the sample after doping stored in air, the forward-bias current of the device reduced rapidly due to the undoping and/or degradation of polymer. It is possible to protect the degradation of device characteristics after doping, by sealing the chimney and storing the device in vacuum.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e87-c_2_152/_p
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@ARTICLE{e87-c_2_152,
author={Masayuki WADA, Kazuya TADA, Mitsuyoshi ONODA, },
journal={IEICE TRANSACTIONS on Electronics},
title={Doping Effects on the Series Resistance of Conducting Polymers Diode},
year={2004},
volume={E87-C},
number={2},
pages={152-157},
abstract={A device structure for polymer Schottky diode, which has the glass chimney as a dopant reservoir enabling the reduction of series resistance without cathode corrosion, has been proposed. Doping with the acetonitrile solution of FeCl3 in the device resulted in the increase in the forward-bias current by one order of magnitude without notable increase in reverse-bias current, suggesting that the doping reduced the series resistance. It is found that the penetration speed depends on the solvents. Short time doping with the nitromethane solution of FeCl3 resulted in the increase by three orders of magnitude. However, doping for a long period yielded the considerable increase in the reverse-bias current due to the complete penetration of dopatn solution. When the upper opening of glass chimney of device is left opened and the sample after doping stored in air, the forward-bias current of the device reduced rapidly due to the undoping and/or degradation of polymer. It is possible to protect the degradation of device characteristics after doping, by sealing the chimney and storing the device in vacuum.},
keywords={},
doi={},
ISSN={},
month={February},}
Copy
TY - JOUR
TI - Doping Effects on the Series Resistance of Conducting Polymers Diode
T2 - IEICE TRANSACTIONS on Electronics
SP - 152
EP - 157
AU - Masayuki WADA
AU - Kazuya TADA
AU - Mitsuyoshi ONODA
PY - 2004
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E87-C
IS - 2
JA - IEICE TRANSACTIONS on Electronics
Y1 - February 2004
AB - A device structure for polymer Schottky diode, which has the glass chimney as a dopant reservoir enabling the reduction of series resistance without cathode corrosion, has been proposed. Doping with the acetonitrile solution of FeCl3 in the device resulted in the increase in the forward-bias current by one order of magnitude without notable increase in reverse-bias current, suggesting that the doping reduced the series resistance. It is found that the penetration speed depends on the solvents. Short time doping with the nitromethane solution of FeCl3 resulted in the increase by three orders of magnitude. However, doping for a long period yielded the considerable increase in the reverse-bias current due to the complete penetration of dopatn solution. When the upper opening of glass chimney of device is left opened and the sample after doping stored in air, the forward-bias current of the device reduced rapidly due to the undoping and/or degradation of polymer. It is possible to protect the degradation of device characteristics after doping, by sealing the chimney and storing the device in vacuum.
ER -
English
