A V-band Monolithic HEMT Amplifier Using Two Types of RF Grounds
Summary :
We have developed a V-band monolithic HEMT amplifier with single positive power supply. The amplifier used two types of RF grounds for coplanar waveguides (CPW) as transmission lines. One RF ground has a voltage of 0 V at DC, and the other RF ground has a voltage of more than 0 V at DC. A prototype of the monolithic amplifier was fabricated. The amplifier had a gain of 21.0 dB, a Rollett stability factor K of 2.35, an input VSWR of 1.82, and an output VSWR of 2.14 at 59.5 GHz.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E87-C No.6 pp.1010-1012
- Publication Date
- 2004/06/01
- Publicized
- Online ISSN
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- Type of Manuscript
- Special Section LETTER (Special Section on Analog Circuit and Device Technologies)
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Naoko ONO, "A V-band Monolithic HEMT Amplifier Using Two Types of RF Grounds" in IEICE TRANSACTIONS on Electronics,
vol. E87-C, no. 6, pp. 1010-1012, June 2004, doi: .
Abstract: We have developed a V-band monolithic HEMT amplifier with single positive power supply. The amplifier used two types of RF grounds for coplanar waveguides (CPW) as transmission lines. One RF ground has a voltage of 0 V at DC, and the other RF ground has a voltage of more than 0 V at DC. A prototype of the monolithic amplifier was fabricated. The amplifier had a gain of 21.0 dB, a Rollett stability factor K of 2.35, an input VSWR of 1.82, and an output VSWR of 2.14 at 59.5 GHz.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e87-c_6_1010/_p
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@ARTICLE{e87-c_6_1010,
author={Naoko ONO, },
journal={IEICE TRANSACTIONS on Electronics},
title={A V-band Monolithic HEMT Amplifier Using Two Types of RF Grounds},
year={2004},
volume={E87-C},
number={6},
pages={1010-1012},
abstract={We have developed a V-band monolithic HEMT amplifier with single positive power supply. The amplifier used two types of RF grounds for coplanar waveguides (CPW) as transmission lines. One RF ground has a voltage of 0 V at DC, and the other RF ground has a voltage of more than 0 V at DC. A prototype of the monolithic amplifier was fabricated. The amplifier had a gain of 21.0 dB, a Rollett stability factor K of 2.35, an input VSWR of 1.82, and an output VSWR of 2.14 at 59.5 GHz.},
keywords={},
doi={},
ISSN={},
month={June},}
Copy
TY - JOUR
TI - A V-band Monolithic HEMT Amplifier Using Two Types of RF Grounds
T2 - IEICE TRANSACTIONS on Electronics
SP - 1010
EP - 1012
AU - Naoko ONO
PY - 2004
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E87-C
IS - 6
JA - IEICE TRANSACTIONS on Electronics
Y1 - June 2004
AB - We have developed a V-band monolithic HEMT amplifier with single positive power supply. The amplifier used two types of RF grounds for coplanar waveguides (CPW) as transmission lines. One RF ground has a voltage of 0 V at DC, and the other RF ground has a voltage of more than 0 V at DC. A prototype of the monolithic amplifier was fabricated. The amplifier had a gain of 21.0 dB, a Rollett stability factor K of 2.35, an input VSWR of 1.82, and an output VSWR of 2.14 at 59.5 GHz.
ER -
English
