A Fully Integrated CMOS RF Front-End with On-Chip VCO for W-CDMA Applications

Hyung Ki AHN; Kyoohyun LIM; Chan-Hong PARK; Jae Joon KIM; Beomsup KIM

A Fully Integrated CMOS RF Front-End with On-Chip VCO for W-CDMA Applications

Hyung Ki AHN, Kyoohyun LIM, Chan-Hong PARK, Jae Joon KIM, Beomsup KIM

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A fully integrated RF front-end for W-CDMA applications including a low noise amplifier, a down conversion mixer, a digitally programmable gain amplifier, an on-chip VCO, and a fractional-N frequency synthesizer is designed using a 0.35-µm CMOS process. A multi-stage ring shaped on-chip LC-VCO exhibiting bandpass characteristics overcomes the limitation of low-Q components in the tank circuits and improves the phase noise performance. The measured phase noise of the on-chip VCO is -134 dBc/Hz at 1 MHz offset. The receiver RF front-end achieves a NF of 3.5 dB, an IIP3 of -16 dBm, and a maximum gain of 80 dB. The receiver consumes 52 mA with a 3-V supply and occupies only 2 mm² die area with minimal external components.

Publication: IEICE TRANSACTIONS on Electronics Vol.E87-C No.6 pp.1047-1053

Publication Date: 2004/06/01

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Type of Manuscript: PAPER

Category: Electronic Circuits

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Hyung Ki AHN, Kyoohyun LIM, Chan-Hong PARK, Jae Joon KIM, Beomsup KIM, "A Fully Integrated CMOS RF Front-End with On-Chip VCO for W-CDMA Applications" in IEICE TRANSACTIONS on Electronics, vol. E87-C, no. 6, pp. 1047-1053, June 2004, doi: .
Abstract: A fully integrated RF front-end for W-CDMA applications including a low noise amplifier, a down conversion mixer, a digitally programmable gain amplifier, an on-chip VCO, and a fractional-N frequency synthesizer is designed using a 0.35-µm CMOS process. A multi-stage ring shaped on-chip LC-VCO exhibiting bandpass characteristics overcomes the limitation of low-Q components in the tank circuits and improves the phase noise performance. The measured phase noise of the on-chip VCO is -134 dBc/Hz at 1 MHz offset. The receiver RF front-end achieves a NF of 3.5 dB, an IIP3 of -16 dBm, and a maximum gain of 80 dB. The receiver consumes 52 mA with a 3-V supply and occupies only 2 mm² die area with minimal external components.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e87-c_6_1047/_p

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@ARTICLE{e87-c_6_1047,
author={Hyung Ki AHN, Kyoohyun LIM, Chan-Hong PARK, Jae Joon KIM, Beomsup KIM, },
journal={IEICE TRANSACTIONS on Electronics},
title={A Fully Integrated CMOS RF Front-End with On-Chip VCO for W-CDMA Applications},
year={2004},
volume={E87-C},
number={6},
pages={1047-1053},
abstract={A fully integrated RF front-end for W-CDMA applications including a low noise amplifier, a down conversion mixer, a digitally programmable gain amplifier, an on-chip VCO, and a fractional-N frequency synthesizer is designed using a 0.35-µm CMOS process. A multi-stage ring shaped on-chip LC-VCO exhibiting bandpass characteristics overcomes the limitation of low-Q components in the tank circuits and improves the phase noise performance. The measured phase noise of the on-chip VCO is -134 dBc/Hz at 1 MHz offset. The receiver RF front-end achieves a NF of 3.5 dB, an IIP3 of -16 dBm, and a maximum gain of 80 dB. The receiver consumes 52 mA with a 3-V supply and occupies only 2 mm² die area with minimal external components.},
keywords={},
doi={},
ISSN={},
month={June},}

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TY - JOUR
TI - A Fully Integrated CMOS RF Front-End with On-Chip VCO for W-CDMA Applications
T2 - IEICE TRANSACTIONS on Electronics
SP - 1047
EP - 1053
AU - Hyung Ki AHN
AU - Kyoohyun LIM
AU - Chan-Hong PARK
AU - Jae Joon KIM
AU - Beomsup KIM
PY - 2004
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E87-C
IS - 6
JA - IEICE TRANSACTIONS on Electronics
Y1 - June 2004
AB - A fully integrated RF front-end for W-CDMA applications including a low noise amplifier, a down conversion mixer, a digitally programmable gain amplifier, an on-chip VCO, and a fractional-N frequency synthesizer is designed using a 0.35-µm CMOS process. A multi-stage ring shaped on-chip LC-VCO exhibiting bandpass characteristics overcomes the limitation of low-Q components in the tank circuits and improves the phase noise performance. The measured phase noise of the on-chip VCO is -134 dBc/Hz at 1 MHz offset. The receiver RF front-end achieves a NF of 3.5 dB, an IIP3 of -16 dBm, and a maximum gain of 80 dB. The receiver consumes 52 mA with a 3-V supply and occupies only 2 mm² die area with minimal external components.
ER -