13.56MHz Half-Bridge GaN-HEMT Resonant Inverter Achieving High Power, Low Distortion, and High Efficiency by ‘L-S Network’

Aoi OYANE; Thilak SENANAYAKE; Mitsuru MASUDA; Jun IMAOKA; Masayoshi YAMAMOTO

doi:10.1587/transele.2021ECP5048

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13.56MHz Half-Bridge GaN-HEMT Resonant Inverter Achieving High Power, Low Distortion, and High Efficiency by ‘L-S Network’

Aoi OYANE, Thilak SENANAYAKE, Mitsuru MASUDA, Jun IMAOKA, Masayoshi YAMAMOTO

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Summary :

This paper proposes a topology of high power, MHz-frequency, half-bridge resonant inverter ideal for low-loss Gallium Nitride high electron mobility transistor (GaN-HEMT). General GaN-HEMTs have drawback of low drain-source breakdown voltage. This property has prevented conventional high-frequency series resonant inverters from delivering high power to high resistance loads such as 50Ω, which is typically used in radio frequency (RF) systems. High resistance load causes hard-switching also and reduction of power efficiency. The proposed topology overcomes these difficulties by utilizing a proposed ‘L-S network’. This network is effective combination of a simple impedance converter and a series resonator. The proposed topology provides not only high power for high resistance load but also arbitrary design of output wattage depending on impedance conversion design. In addition, the current through the series resonator is low in the L-S network. Hence, this series resonator can be designed specifically for harmonic suppression with relatively high quality-factor and zero reactance. Low-distortion sinusoidal 3kW output is verified in the proposed inverter at 13.56MHz by computer simulations. Further, 99.4% high efficiency is achieved in the power circuit in 471W experimental prototype.

Publication: IEICE TRANSACTIONS on Electronics Vol.E105-C No.9 pp.407-418

Publication Date: 2022/09/01

Publicized: 2022/03/25

Online ISSN: 1745-1353

DOI: 10.1587/transele.2021ECP5048

Type of Manuscript: PAPER

Category: Electronic Circuits

Authors

Aoi OYANE
  Nagoya University
Thilak SENANAYAKE
  Nagoya University
Mitsuru MASUDA
  Furukawa Electric Co. LTD
Jun IMAOKA
  Nagoya University
Masayoshi YAMAMOTO
  Nagoya University

Keyword

resonant inverter, GaN-HEMT, ISM bands, impedance conversion, harmonics suppression

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Aoi OYANE, Thilak SENANAYAKE, Mitsuru MASUDA, Jun IMAOKA, Masayoshi YAMAMOTO, "13.56MHz Half-Bridge GaN-HEMT Resonant Inverter Achieving High Power, Low Distortion, and High Efficiency by ‘L-S Network’" in IEICE TRANSACTIONS on Electronics, vol. E105-C, no. 9, pp. 407-418, September 2022, doi: 10.1587/transele.2021ECP5048.
Abstract: This paper proposes a topology of high power, MHz-frequency, half-bridge resonant inverter ideal for low-loss Gallium Nitride high electron mobility transistor (GaN-HEMT). General GaN-HEMTs have drawback of low drain-source breakdown voltage. This property has prevented conventional high-frequency series resonant inverters from delivering high power to high resistance loads such as 50Ω, which is typically used in radio frequency (RF) systems. High resistance load causes hard-switching also and reduction of power efficiency. The proposed topology overcomes these difficulties by utilizing a proposed ‘L-S network’. This network is effective combination of a simple impedance converter and a series resonator. The proposed topology provides not only high power for high resistance load but also arbitrary design of output wattage depending on impedance conversion design. In addition, the current through the series resonator is low in the L-S network. Hence, this series resonator can be designed specifically for harmonic suppression with relatively high quality-factor and zero reactance. Low-distortion sinusoidal 3kW output is verified in the proposed inverter at 13.56MHz by computer simulations. Further, 99.4% high efficiency is achieved in the power circuit in 471W experimental prototype.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.2021ECP5048/_p

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@ARTICLE{e105-c_9_407,
author={Aoi OYANE, Thilak SENANAYAKE, Mitsuru MASUDA, Jun IMAOKA, Masayoshi YAMAMOTO, },
journal={IEICE TRANSACTIONS on Electronics},
title={13.56MHz Half-Bridge GaN-HEMT Resonant Inverter Achieving High Power, Low Distortion, and High Efficiency by ‘L-S Network’},
year={2022},
volume={E105-C},
number={9},
pages={407-418},
abstract={This paper proposes a topology of high power, MHz-frequency, half-bridge resonant inverter ideal for low-loss Gallium Nitride high electron mobility transistor (GaN-HEMT). General GaN-HEMTs have drawback of low drain-source breakdown voltage. This property has prevented conventional high-frequency series resonant inverters from delivering high power to high resistance loads such as 50Ω, which is typically used in radio frequency (RF) systems. High resistance load causes hard-switching also and reduction of power efficiency. The proposed topology overcomes these difficulties by utilizing a proposed ‘L-S network’. This network is effective combination of a simple impedance converter and a series resonator. The proposed topology provides not only high power for high resistance load but also arbitrary design of output wattage depending on impedance conversion design. In addition, the current through the series resonator is low in the L-S network. Hence, this series resonator can be designed specifically for harmonic suppression with relatively high quality-factor and zero reactance. Low-distortion sinusoidal 3kW output is verified in the proposed inverter at 13.56MHz by computer simulations. Further, 99.4% high efficiency is achieved in the power circuit in 471W experimental prototype.},
keywords={},
doi={10.1587/transele.2021ECP5048},
ISSN={1745-1353},
month={September},}

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TY - JOUR
TI - 13.56MHz Half-Bridge GaN-HEMT Resonant Inverter Achieving High Power, Low Distortion, and High Efficiency by ‘L-S Network’
T2 - IEICE TRANSACTIONS on Electronics
SP - 407
EP - 418
AU - Aoi OYANE
AU - Thilak SENANAYAKE
AU - Mitsuru MASUDA
AU - Jun IMAOKA
AU - Masayoshi YAMAMOTO
PY - 2022
DO - 10.1587/transele.2021ECP5048
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E105-C
IS - 9
JA - IEICE TRANSACTIONS on Electronics
Y1 - September 2022
AB - This paper proposes a topology of high power, MHz-frequency, half-bridge resonant inverter ideal for low-loss Gallium Nitride high electron mobility transistor (GaN-HEMT). General GaN-HEMTs have drawback of low drain-source breakdown voltage. This property has prevented conventional high-frequency series resonant inverters from delivering high power to high resistance loads such as 50Ω, which is typically used in radio frequency (RF) systems. High resistance load causes hard-switching also and reduction of power efficiency. The proposed topology overcomes these difficulties by utilizing a proposed ‘L-S network’. This network is effective combination of a simple impedance converter and a series resonator. The proposed topology provides not only high power for high resistance load but also arbitrary design of output wattage depending on impedance conversion design. In addition, the current through the series resonator is low in the L-S network. Hence, this series resonator can be designed specifically for harmonic suppression with relatively high quality-factor and zero reactance. Low-distortion sinusoidal 3kW output is verified in the proposed inverter at 13.56MHz by computer simulations. Further, 99.4% high efficiency is achieved in the power circuit in 471W experimental prototype.
ER -