An interpretation method of inversion phenomena is newly proposed for backward transient scattered field components for both E- and H-polarizations when an ultra-wideband (UWB) pulse wave radiated from a line source is incident on a two-dimensional metal cylinder covered with a lossless dielectric medium layer (coated metal cylinder). A time-domain (TD) asymptotic solution, which is referred to as a TD saddle point technique (TD-SPT), is derived by applying the SPT in evaluating a backward transient scattered field which is expressed by an integral form. The TD-SPT is represented by a combination of a direct geometric optical ray (DGO) and a reflected GO (RGO) series, thereby being able to extract and calculate any backward transient scattered field component from a response waveform. The TD-SPT is useful in understanding the response waveform of a backward transient scattered field by a coated metal cylinder because it can give us the peak value and arrival time of any field component, namely DGO and RGO components, and interpret analytically inversion phenomenon of any field component. The accuracy, validity, and practicality of the TD-SPT are clarified by comparing it with two kinds of reference solutions.

Couplers in a film-type capacitive wireless power charging (CWC) system for an implantable medical device were designed and analyzed in this work. Due to the high conductivity of the human body, two paths contribute to the power transmission, namely a high-frequency current and an electric field. This was confirmed by an equivalent circuit of the system. During analysis of the system, we used pig skin with subcutaneous fat, which has a high affinity with the human body, to search for a highly efficient electrode shape. Subsequently, we fabricated the designed coupler and measured η_max. An η_max of 56.6% was obtained for a half-circular coupler with a radius of 20 mm and a distance of 10 mm between adjacent couplers. This study will contribute to the realization of implantable devices that can be recharged during breaks or while sleeping at home and is expected to significantly reduce the burden on patients.

This paper proposes a topology of high power, MHz-frequency, half-bridge resonant inverter ideal for low-loss Gallium Nitride high electron mobility transistor (GaN-HEMT). General GaN-HEMTs have drawback of low drain-source breakdown voltage. This property has prevented conventional high-frequency series resonant inverters from delivering high power to high resistance loads such as 50Ω, which is typically used in radio frequency (RF) systems. High resistance load causes hard-switching also and reduction of power efficiency. The proposed topology overcomes these difficulties by utilizing a proposed ‘L-S network’. This network is effective combination of a simple impedance converter and a series resonator. The proposed topology provides not only high power for high resistance load but also arbitrary design of output wattage depending on impedance conversion design. In addition, the current through the series resonator is low in the L-S network. Hence, this series resonator can be designed specifically for harmonic suppression with relatively high quality-factor and zero reactance. Low-distortion sinusoidal 3kW output is verified in the proposed inverter at 13.56MHz by computer simulations. Further, 99.4% high efficiency is achieved in the power circuit in 471W experimental prototype.