A Low-Power High-Speed Sensing Scheme for Single-Ended SRAM

Dashan SHI; Heng YOU; Jia YUAN; Yulian WANG; Shushan QIAO

doi:10.1587/transele.2022ECP5008

A Low-Power High-Speed Sensing Scheme for Single-Ended SRAM

Dashan SHI, Heng YOU, Jia YUAN, Yulian WANG, Shushan QIAO

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In this paper, a reference-voltage self-selected pseudo-differential sensing scheme suitable for single-ended SRAM is proposed. The proposed sensing scheme can select different reference voltage according to the offset direction. With the employment of the new sensing scheme, the swing of the read bit-line in the read operation is reduced by 74.6% and 45.5% compared to the conventional domino and the pseudo-differential sense amplifier sensing scheme, respectively. Therefore, the delay and power consumption of the read operation are significantly improved. Simulation results based on a standard 55nm CMOS show that compared with the conventional domino and pseudo-differential sensing schemes, the sensing delay is improved by 66.4% and 47.7%, and the power consumption is improved by 31.4% and 22.5%, respectively. Although the area of the sensing scheme is increased by 50.8% compared with the pseudo-differential sense amplifier sensing scheme, it has little effect on the entire SRAM area.

Publication: IEICE TRANSACTIONS on Electronics Vol.E105-C No.11 pp.712-719

Publication Date: 2022/11/01

Publicized: 2022/05/06

Online ISSN: 1745-1353

DOI: 10.1587/transele.2022ECP5008

Type of Manuscript: PAPER

Category: Integrated Electronics

Authors

Dashan SHI
  Institute of Microelectronics of the Chinese Academy of Sciences (IMECAS),University of Chinese Academy of Sciences (UCAS)
Heng YOU
  Institute of Microelectronics of the Chinese Academy of Sciences (IMECAS),University of Chinese Academy of Sciences (UCAS)
Jia YUAN
  Institute of Microelectronics of the Chinese Academy of Sciences (IMECAS),University of Chinese Academy of Sciences (UCAS)
Yulian WANG
  Institute of Microelectronics of the Chinese Academy of Sciences (IMECAS),University of Chinese Academy of Sciences (UCAS)
Shushan QIAO
  Institute of Microelectronics of the Chinese Academy of Sciences (IMECAS),University of Chinese Academy of Sciences (UCAS)

Keyword

low-power, high-speed, SRAM, sensing-scheme

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Dashan SHI, Heng YOU, Jia YUAN, Yulian WANG, Shushan QIAO, "A Low-Power High-Speed Sensing Scheme for Single-Ended SRAM" in IEICE TRANSACTIONS on Electronics, vol. E105-C, no. 11, pp. 712-719, November 2022, doi: 10.1587/transele.2022ECP5008.
Abstract: In this paper, a reference-voltage self-selected pseudo-differential sensing scheme suitable for single-ended SRAM is proposed. The proposed sensing scheme can select different reference voltage according to the offset direction. With the employment of the new sensing scheme, the swing of the read bit-line in the read operation is reduced by 74.6% and 45.5% compared to the conventional domino and the pseudo-differential sense amplifier sensing scheme, respectively. Therefore, the delay and power consumption of the read operation are significantly improved. Simulation results based on a standard 55nm CMOS show that compared with the conventional domino and pseudo-differential sensing schemes, the sensing delay is improved by 66.4% and 47.7%, and the power consumption is improved by 31.4% and 22.5%, respectively. Although the area of the sensing scheme is increased by 50.8% compared with the pseudo-differential sense amplifier sensing scheme, it has little effect on the entire SRAM area.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.2022ECP5008/_p

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@ARTICLE{e105-c_11_712,
author={Dashan SHI, Heng YOU, Jia YUAN, Yulian WANG, Shushan QIAO, },
journal={IEICE TRANSACTIONS on Electronics},
title={A Low-Power High-Speed Sensing Scheme for Single-Ended SRAM},
year={2022},
volume={E105-C},
number={11},
pages={712-719},
abstract={In this paper, a reference-voltage self-selected pseudo-differential sensing scheme suitable for single-ended SRAM is proposed. The proposed sensing scheme can select different reference voltage according to the offset direction. With the employment of the new sensing scheme, the swing of the read bit-line in the read operation is reduced by 74.6% and 45.5% compared to the conventional domino and the pseudo-differential sense amplifier sensing scheme, respectively. Therefore, the delay and power consumption of the read operation are significantly improved. Simulation results based on a standard 55nm CMOS show that compared with the conventional domino and pseudo-differential sensing schemes, the sensing delay is improved by 66.4% and 47.7%, and the power consumption is improved by 31.4% and 22.5%, respectively. Although the area of the sensing scheme is increased by 50.8% compared with the pseudo-differential sense amplifier sensing scheme, it has little effect on the entire SRAM area.},
keywords={},
doi={10.1587/transele.2022ECP5008},
ISSN={1745-1353},
month={November},}

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TY - JOUR
TI - A Low-Power High-Speed Sensing Scheme for Single-Ended SRAM
T2 - IEICE TRANSACTIONS on Electronics
SP - 712
EP - 719
AU - Dashan SHI
AU - Heng YOU
AU - Jia YUAN
AU - Yulian WANG
AU - Shushan QIAO
PY - 2022
DO - 10.1587/transele.2022ECP5008
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E105-C
IS - 11
JA - IEICE TRANSACTIONS on Electronics
Y1 - November 2022
AB - In this paper, a reference-voltage self-selected pseudo-differential sensing scheme suitable for single-ended SRAM is proposed. The proposed sensing scheme can select different reference voltage according to the offset direction. With the employment of the new sensing scheme, the swing of the read bit-line in the read operation is reduced by 74.6% and 45.5% compared to the conventional domino and the pseudo-differential sense amplifier sensing scheme, respectively. Therefore, the delay and power consumption of the read operation are significantly improved. Simulation results based on a standard 55nm CMOS show that compared with the conventional domino and pseudo-differential sensing schemes, the sensing delay is improved by 66.4% and 47.7%, and the power consumption is improved by 31.4% and 22.5%, respectively. Although the area of the sensing scheme is increased by 50.8% compared with the pseudo-differential sense amplifier sensing scheme, it has little effect on the entire SRAM area.
ER -