Effect of Nitrogen-Doped LaB6 Interfacial Layer on Device Characteristics of Pentacene-Based OFET
Summary :
In this paper, the effect of a nitrogen-doped (N-doped) LaB6 interfacial layer (IL) on p-type pentacene-based OFET was investigated. The pentacene-based OFET with top-contact/back-gate geometry was fabricated. A 2-nm-thick N-doped LaB6 interfacial layer deposited on an 8-nm-thick SiO2 gate insulator. A 10-nm-thick pentacene film was deposited by thermal evaporation at 100°C followed by Au contact and Al back gate electrodes formation. The fabricated OFET showed normally- off characteristics and a steep subthreshold swing (SS) of 84 mV/dec. from ID-VG and ID-VD characteristics. Furthermore, the aging characteristics of 6 months after the fabrication were investigated and it was found that VTH and SS were stable when the N-doped LaB6 IL was introduced at the interface between SiO2 gate insulator and pentacene.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E100-C No.5 pp.463-467
- Publication Date
- 2017/05/01
- Publicized
- Online ISSN
- 1745-1353
- DOI
- 10.1587/transele.E100.C.463
- Type of Manuscript
- Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
- Category
Authors
Yasutaka MAEDA
Tokyo Institute of Technology
Shun-ichiro OHMI
Tokyo Institute of Technology
Tetsuya GOTO
Tohoku University
Tadahiro OHMI
Tohoku University
Keyword
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Yasutaka MAEDA, Shun-ichiro OHMI, Tetsuya GOTO, Tadahiro OHMI, "Effect of Nitrogen-Doped LaB6 Interfacial Layer on Device Characteristics of Pentacene-Based OFET" in IEICE TRANSACTIONS on Electronics,
vol. E100-C, no. 5, pp. 463-467, May 2017, doi: 10.1587/transele.E100.C.463.
Abstract: In this paper, the effect of a nitrogen-doped (N-doped) LaB6 interfacial layer (IL) on p-type pentacene-based OFET was investigated. The pentacene-based OFET with top-contact/back-gate geometry was fabricated. A 2-nm-thick N-doped LaB6 interfacial layer deposited on an 8-nm-thick SiO2 gate insulator. A 10-nm-thick pentacene film was deposited by thermal evaporation at 100°C followed by Au contact and Al back gate electrodes formation. The fabricated OFET showed normally- off characteristics and a steep subthreshold swing (SS) of 84 mV/dec. from ID-VG and ID-VD characteristics. Furthermore, the aging characteristics of 6 months after the fabrication were investigated and it was found that VTH and SS were stable when the N-doped LaB6 IL was introduced at the interface between SiO2 gate insulator and pentacene.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.E100.C.463/_p
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@ARTICLE{e100-c_5_463,
author={Yasutaka MAEDA, Shun-ichiro OHMI, Tetsuya GOTO, Tadahiro OHMI, },
journal={IEICE TRANSACTIONS on Electronics},
title={Effect of Nitrogen-Doped LaB6 Interfacial Layer on Device Characteristics of Pentacene-Based OFET},
year={2017},
volume={E100-C},
number={5},
pages={463-467},
abstract={In this paper, the effect of a nitrogen-doped (N-doped) LaB6 interfacial layer (IL) on p-type pentacene-based OFET was investigated. The pentacene-based OFET with top-contact/back-gate geometry was fabricated. A 2-nm-thick N-doped LaB6 interfacial layer deposited on an 8-nm-thick SiO2 gate insulator. A 10-nm-thick pentacene film was deposited by thermal evaporation at 100°C followed by Au contact and Al back gate electrodes formation. The fabricated OFET showed normally- off characteristics and a steep subthreshold swing (SS) of 84 mV/dec. from ID-VG and ID-VD characteristics. Furthermore, the aging characteristics of 6 months after the fabrication were investigated and it was found that VTH and SS were stable when the N-doped LaB6 IL was introduced at the interface between SiO2 gate insulator and pentacene.},
keywords={},
doi={10.1587/transele.E100.C.463},
ISSN={1745-1353},
month={May},}
Copy
TY - JOUR
TI - Effect of Nitrogen-Doped LaB6 Interfacial Layer on Device Characteristics of Pentacene-Based OFET
T2 - IEICE TRANSACTIONS on Electronics
SP - 463
EP - 467
AU - Yasutaka MAEDA
AU - Shun-ichiro OHMI
AU - Tetsuya GOTO
AU - Tadahiro OHMI
PY - 2017
DO - 10.1587/transele.E100.C.463
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E100-C
IS - 5
JA - IEICE TRANSACTIONS on Electronics
Y1 - May 2017
AB - In this paper, the effect of a nitrogen-doped (N-doped) LaB6 interfacial layer (IL) on p-type pentacene-based OFET was investigated. The pentacene-based OFET with top-contact/back-gate geometry was fabricated. A 2-nm-thick N-doped LaB6 interfacial layer deposited on an 8-nm-thick SiO2 gate insulator. A 10-nm-thick pentacene film was deposited by thermal evaporation at 100°C followed by Au contact and Al back gate electrodes formation. The fabricated OFET showed normally- off characteristics and a steep subthreshold swing (SS) of 84 mV/dec. from ID-VG and ID-VD characteristics. Furthermore, the aging characteristics of 6 months after the fabrication were investigated and it was found that VTH and SS were stable when the N-doped LaB6 IL was introduced at the interface between SiO2 gate insulator and pentacene.
ER -
English
