In this paper, the effect of a nitrogen-doped (N-doped) LaB6 interfacial layer (IL) on p-type pentacene-based OFET was investigated. The pentacene-based OFET with top-contact/back-gate geometry was fabricated. A 2-nm-thick N-doped LaB6 interfacial layer deposited on an 8-nm-thick SiO2 gate insulator. A 10-nm-thick pentacene film was deposited by thermal evaporation at 100°C followed by Au contact and Al back gate electrodes formation. The fabricated OFET showed normally- off characteristics and a steep subthreshold swing (SS) of 84 mV/dec. from ID-VG and ID-VD characteristics. Furthermore, the aging characteristics of 6 months after the fabrication were investigated and it was found that VTH and SS were stable when the N-doped LaB6 IL was introduced at the interface between SiO2 gate insulator and pentacene.

Pentacene-based organic field-effect transistors (OFETs) with SiO2 and HfON gate insulators have been fabricated, and the effect of gate insulator on the electrical properties of pentacene-based OFETs and the microstructures of pentacene films were investigated. It was found that the grain size for pentacene film deposited on HfON gate insulator is larger than that for pentacene film deposited on SiO2 gate insulator. Due to the larger grain size, pentacene-based OFET with HfON gate insulator shows better electrical properties compared to pentacene-based OFET with SiO2 gate insulator. Meanwhile, low-temperature (such as 140) fabricated pentacene-based OFET with HfON gate insulator was also investigated. The OFET fabricated at 140 shows a small subthreshold swing of 0.14 V/decade, a large on/off current ratio of 4 104, a threshold voltage of -0.65 V, and a hole mobility of 0.33 cm2/Vs at an operating voltage of -2 V.

Several 2 nm seed layers were sputtered to increase coercivity (Hc) and anisotropy (Ku) of CoCrPt/Ti perpendicular recording media. Among them 2 nm Ag seed layer was very effective to increase Hc of (Co78Cr22)100-xPtx/Ti (x = 14, 20). However, the effect was more pronounced when (Co78Cr22)100-xPtx/Ti became thinner. In addition α[=4π(dM/dH)Hc] decreased when the Ag layer was used. The film thickness below which the seed Ag layer was effective was reduced with decreasing Pt content. However, the Ag seed layer did not promote (0002) texture of Ti and CoCrPt layers. Domain size was reduced when the Ag seed layer was used. The effects of Ag seed layer are thought to be due to change of exchange constant of the grains, for which the grain boundary plays an important role. Effects of film thickness and Pt content can also be explained successfully by the variation of exchange constant due to grain boundary. Some experimental evidence as well as crude mode for exchange constant variation are given.

In this work, micromagnetic simulations of writing and reading processes in a perpendicular system including a single pole head and recording media with soft underlayer (SUL) have been performed. The noise contribution from the recording layer increased with increasing grain size distribution of the recording layer but that from soft underlayer remained almost a constant at a given linear density. Details of the noise from the soft underlayer will be discussed. Also thermal decay over a long time scale of the recorded bits was investigated by the Langevin equation and the time-temperature scaling method. It was found that at the linear density of 1058 kfci narrower grain size distribution in the recording layer even in the same average grain size is very important in the point of thermal decay than expectation.

The ultraclean sputtering process (UC-process) was newly introduced in the fabrication of Co62.5Ni30Cr7.5 and Co85.5Cr10.5Ta4 thin film media to establish a new concept in controlling microstructure. UC-process enables the realization of high coercive force Hc up to 2.7-3 kOe in both CoNiCr and CoCrTa media (15/50 nm magnetic/Cr thicknesses) without the decrement of saturation magnetization. The purification of the atmosphere during sputtering and the removal of the adsorbed oxygen impurity on the substrate surface play important roles in obtaining high Hc by applying the UC-process. This high Hc is mainly due to the realization of large magnetocrystalline anisotropy field of grains Hkgrain and low intergranular exchange coupling. UC-process realizes the adequate separation of grains by segregated grain boundaries even in media with thin Cr thickness of 2.5 nm, and enables grain size reduction without the remarkable increment in intergranular exchange coupling. In these media, the reduction of the grain size is most effective for the improvement of readback signal to media noise ratio S/Nm. In the media with grains sufficiently separated by segregated grain boundaries fabricated by the UC-process, control of grain size reduction and further increase in Hc/Hkgrain value through the decrement in intergranular magnetostatic coupling are required to obtain higher S/Nm value.

Thin (Ba0.75Sr0.25)TiO3 (BST) films to be used as dielectric materials in 256 Mbit DRAM capacitors were investigated. These films were deposited by an rf-sputtering method at substrate temperatures of 480 to 750. As substrate temperature increases, the dielectric constant to the films also increases, from 230 to 550. BST films prepared at temperatures higher than 700 show larger current leaks than films prepared at lower temperatures. A dielectric constant of 250, corresponding to a silicon oxide equivalent thickness (teq) of 0.47 nm, and a leak current density about 110-8 A/cm2 were obtained in 30-nm-thick film deposited at 660. Both of these values are sufficient for use in a 256 Mbit DRAM capacitor.