IEICE TRANSACTIONS on Electronics
Growth Mechanism of Pentacene on HfON Gate Insulator and Its Effect on Electrical Properties of Organic Field-Effect Transistors
Summary :
Pentacene-based organic field-effect transistors (OFETs) with SiO2 and HfON gate insulators have been fabricated, and the effect of gate insulator on the electrical properties of pentacene-based OFETs and the microstructures of pentacene films were investigated. It was found that the grain size for pentacene film deposited on HfON gate insulator is larger than that for pentacene film deposited on SiO2 gate insulator. Due to the larger grain size, pentacene-based OFET with HfON gate insulator shows better electrical properties compared to pentacene-based OFET with SiO2 gate insulator. Meanwhile, low-temperature (such as 140
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E95-C No.5 pp.885-890
- Publication Date
- 2012/05/01
- Publicized
- Online ISSN
- 1745-1353
- DOI
- 10.1587/transele.E95.C.885
- Type of Manuscript
- Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
- Category
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Min LIAO, Hiroshi ISHIWARA, Shun-ichiro OHMI, "Growth Mechanism of Pentacene on HfON Gate Insulator and Its Effect on Electrical Properties of Organic Field-Effect Transistors" in IEICE TRANSACTIONS on Electronics,
vol. E95-C, no. 5, pp. 885-890, May 2012, doi: 10.1587/transele.E95.C.885.
Abstract: Pentacene-based organic field-effect transistors (OFETs) with SiO2 and HfON gate insulators have been fabricated, and the effect of gate insulator on the electrical properties of pentacene-based OFETs and the microstructures of pentacene films were investigated. It was found that the grain size for pentacene film deposited on HfON gate insulator is larger than that for pentacene film deposited on SiO2 gate insulator. Due to the larger grain size, pentacene-based OFET with HfON gate insulator shows better electrical properties compared to pentacene-based OFET with SiO2 gate insulator. Meanwhile, low-temperature (such as 140
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.E95.C.885/_p
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@ARTICLE{e95-c_5_885,
author={Min LIAO, Hiroshi ISHIWARA, Shun-ichiro OHMI, },
journal={IEICE TRANSACTIONS on Electronics},
title={Growth Mechanism of Pentacene on HfON Gate Insulator and Its Effect on Electrical Properties of Organic Field-Effect Transistors},
year={2012},
volume={E95-C},
number={5},
pages={885-890},
abstract={Pentacene-based organic field-effect transistors (OFETs) with SiO2 and HfON gate insulators have been fabricated, and the effect of gate insulator on the electrical properties of pentacene-based OFETs and the microstructures of pentacene films were investigated. It was found that the grain size for pentacene film deposited on HfON gate insulator is larger than that for pentacene film deposited on SiO2 gate insulator. Due to the larger grain size, pentacene-based OFET with HfON gate insulator shows better electrical properties compared to pentacene-based OFET with SiO2 gate insulator. Meanwhile, low-temperature (such as 140
keywords={},
doi={10.1587/transele.E95.C.885},
ISSN={1745-1353},
month={May},}
Copy
TY - JOUR
TI - Growth Mechanism of Pentacene on HfON Gate Insulator and Its Effect on Electrical Properties of Organic Field-Effect Transistors
T2 - IEICE TRANSACTIONS on Electronics
SP - 885
EP - 890
AU - Min LIAO
AU - Hiroshi ISHIWARA
AU - Shun-ichiro OHMI
PY - 2012
DO - 10.1587/transele.E95.C.885
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E95-C
IS - 5
JA - IEICE TRANSACTIONS on Electronics
Y1 - May 2012
AB - Pentacene-based organic field-effect transistors (OFETs) with SiO2 and HfON gate insulators have been fabricated, and the effect of gate insulator on the electrical properties of pentacene-based OFETs and the microstructures of pentacene films were investigated. It was found that the grain size for pentacene film deposited on HfON gate insulator is larger than that for pentacene film deposited on SiO2 gate insulator. Due to the larger grain size, pentacene-based OFET with HfON gate insulator shows better electrical properties compared to pentacene-based OFET with SiO2 gate insulator. Meanwhile, low-temperature (such as 140
ER -
English
