Possibility of Metal-Oxide-Nitride-Oxide-Semiconductor Memories for Long Lifespan Archive Memories
Summary :
We demonstrate on the basis of ab initio calculations that metal-oxide-nitride-oxide-semiconductor (MONOS) memory is one of the most promising future high-density archive memories. We find that O related defects in a MONOS memory cause irreversible structural changes to the SiO2/Si3N4 interface at the atomistic level during program/erase (P/E) cycles. Carrier injection during the programming operation makes the structure energetically very stable, because all the O atoms in this structure take on three-fold-coordination. The estimated lifespan of the programmed state is of the order of a thousand years.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E100-C No.10 pp.928-933
- Publication Date
- 2017/10/01
- Publicized
- Online ISSN
- 1745-1353
- DOI
- 10.1587/transele.E100.C.928
- Type of Manuscript
- PAPER
- Category
- Semiconductor Materials and Devices
Authors
Hiroki SHIRAKAWA
Nagoya University
Keita YAMAGUCHI
Nagoya University
Masaaki ARAIDAI
Nagoya University
Katsumasa KAMIYA
Kanagawa Institute of Technology
Kenji SHIRAISHI
Nagoya University
Keyword
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Hiroki SHIRAKAWA, Keita YAMAGUCHI, Masaaki ARAIDAI, Katsumasa KAMIYA, Kenji SHIRAISHI, "Possibility of Metal-Oxide-Nitride-Oxide-Semiconductor Memories for Long Lifespan Archive Memories" in IEICE TRANSACTIONS on Electronics,
vol. E100-C, no. 10, pp. 928-933, October 2017, doi: 10.1587/transele.E100.C.928.
Abstract: We demonstrate on the basis of ab initio calculations that metal-oxide-nitride-oxide-semiconductor (MONOS) memory is one of the most promising future high-density archive memories. We find that O related defects in a MONOS memory cause irreversible structural changes to the SiO2/Si3N4 interface at the atomistic level during program/erase (P/E) cycles. Carrier injection during the programming operation makes the structure energetically very stable, because all the O atoms in this structure take on three-fold-coordination. The estimated lifespan of the programmed state is of the order of a thousand years.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.E100.C.928/_p
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@ARTICLE{e100-c_10_928,
author={Hiroki SHIRAKAWA, Keita YAMAGUCHI, Masaaki ARAIDAI, Katsumasa KAMIYA, Kenji SHIRAISHI, },
journal={IEICE TRANSACTIONS on Electronics},
title={Possibility of Metal-Oxide-Nitride-Oxide-Semiconductor Memories for Long Lifespan Archive Memories},
year={2017},
volume={E100-C},
number={10},
pages={928-933},
abstract={We demonstrate on the basis of ab initio calculations that metal-oxide-nitride-oxide-semiconductor (MONOS) memory is one of the most promising future high-density archive memories. We find that O related defects in a MONOS memory cause irreversible structural changes to the SiO2/Si3N4 interface at the atomistic level during program/erase (P/E) cycles. Carrier injection during the programming operation makes the structure energetically very stable, because all the O atoms in this structure take on three-fold-coordination. The estimated lifespan of the programmed state is of the order of a thousand years.},
keywords={},
doi={10.1587/transele.E100.C.928},
ISSN={1745-1353},
month={October},}
Copy
TY - JOUR
TI - Possibility of Metal-Oxide-Nitride-Oxide-Semiconductor Memories for Long Lifespan Archive Memories
T2 - IEICE TRANSACTIONS on Electronics
SP - 928
EP - 933
AU - Hiroki SHIRAKAWA
AU - Keita YAMAGUCHI
AU - Masaaki ARAIDAI
AU - Katsumasa KAMIYA
AU - Kenji SHIRAISHI
PY - 2017
DO - 10.1587/transele.E100.C.928
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E100-C
IS - 10
JA - IEICE TRANSACTIONS on Electronics
Y1 - October 2017
AB - We demonstrate on the basis of ab initio calculations that metal-oxide-nitride-oxide-semiconductor (MONOS) memory is one of the most promising future high-density archive memories. We find that O related defects in a MONOS memory cause irreversible structural changes to the SiO2/Si3N4 interface at the atomistic level during program/erase (P/E) cycles. Carrier injection during the programming operation makes the structure energetically very stable, because all the O atoms in this structure take on three-fold-coordination. The estimated lifespan of the programmed state is of the order of a thousand years.
ER -
English
