PdEr-Silicide Formation and Contact Resistivity Reduction to n-Si(100) Realized by Dopant Segregation Process
Summary :
In this paper, we have investigated the PdEr-silicide formation utilizing a developed PdEr-alloy target for sputtering, and evaluated the contact resistivity of PdEr-silicide layer formed on n-Si(100) by dopant segregation process for the first time. Pd2Si and ErSi2 have same hexagonal structure, while the Schottky barrier height for electron (Φbn) is different as 0.75 eV and 0.28 eV, respectively. A 20 nm-thick PdEr-alloy layer was deposited on the n-Si(100) substrates utilizing a developed PdEr-alloy target by the RF magnetron sputtering at room temperature. Then, 10 nm-thick TiN encapsulating layer was in-situ deposited at room temperature. Next, silicidation was carried out by the RTA at 500℃ for 5 min in N2/4.9%H2 followed by the selective etching. From the J-V characteristics of fabricated Schottky diode, qΦbn was reduced from 0.75 eV of Pd2Si to 0.43 eV of PdEr-silicide. Furthermore, 4.0x10-8Ωcm2 was extracted for the PdEr-silicide to n-Si(100) by the dopant segregation process.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E101-C No.5 pp.311-316
- Publication Date
- 2018/05/01
- Publicized
- Online ISSN
- 1745-1353
- DOI
- 10.1587/transele.E101.C.311
- Type of Manuscript
- Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
- Category
Authors
Shun-ichiro OHMI
Tokyo Institute of Technology
Yuya TSUKAMOTO
Tokyo Institute of Technology
Weiguang ZUO
Tokyo Institute of Technology
Yasushi MASAHIRO
TANAKA Kikinzoku Kogyo Co., Ltd.
Keyword
Latest Issue
Copyrights notice of machine-translated contents
The copyright of the original papers published on this site belongs to IEICE. Unauthorized use of the original or translated papers is prohibited. See IEICE Provisions on Copyright for details.
Cite this
Copy
Shun-ichiro OHMI, Yuya TSUKAMOTO, Weiguang ZUO, Yasushi MASAHIRO, "PdEr-Silicide Formation and Contact Resistivity Reduction to n-Si(100) Realized by Dopant Segregation Process" in IEICE TRANSACTIONS on Electronics,
vol. E101-C, no. 5, pp. 311-316, May 2018, doi: 10.1587/transele.E101.C.311.
Abstract: In this paper, we have investigated the PdEr-silicide formation utilizing a developed PdEr-alloy target for sputtering, and evaluated the contact resistivity of PdEr-silicide layer formed on n-Si(100) by dopant segregation process for the first time. Pd2Si and ErSi2 have same hexagonal structure, while the Schottky barrier height for electron (Φbn) is different as 0.75 eV and 0.28 eV, respectively. A 20 nm-thick PdEr-alloy layer was deposited on the n-Si(100) substrates utilizing a developed PdEr-alloy target by the RF magnetron sputtering at room temperature. Then, 10 nm-thick TiN encapsulating layer was in-situ deposited at room temperature. Next, silicidation was carried out by the RTA at 500℃ for 5 min in N2/4.9%H2 followed by the selective etching. From the J-V characteristics of fabricated Schottky diode, qΦbn was reduced from 0.75 eV of Pd2Si to 0.43 eV of PdEr-silicide. Furthermore, 4.0x10-8Ωcm2 was extracted for the PdEr-silicide to n-Si(100) by the dopant segregation process.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.E101.C.311/_p
Copy
@ARTICLE{e101-c_5_311,
author={Shun-ichiro OHMI, Yuya TSUKAMOTO, Weiguang ZUO, Yasushi MASAHIRO, },
journal={IEICE TRANSACTIONS on Electronics},
title={PdEr-Silicide Formation and Contact Resistivity Reduction to n-Si(100) Realized by Dopant Segregation Process},
year={2018},
volume={E101-C},
number={5},
pages={311-316},
abstract={In this paper, we have investigated the PdEr-silicide formation utilizing a developed PdEr-alloy target for sputtering, and evaluated the contact resistivity of PdEr-silicide layer formed on n-Si(100) by dopant segregation process for the first time. Pd2Si and ErSi2 have same hexagonal structure, while the Schottky barrier height for electron (Φbn) is different as 0.75 eV and 0.28 eV, respectively. A 20 nm-thick PdEr-alloy layer was deposited on the n-Si(100) substrates utilizing a developed PdEr-alloy target by the RF magnetron sputtering at room temperature. Then, 10 nm-thick TiN encapsulating layer was in-situ deposited at room temperature. Next, silicidation was carried out by the RTA at 500℃ for 5 min in N2/4.9%H2 followed by the selective etching. From the J-V characteristics of fabricated Schottky diode, qΦbn was reduced from 0.75 eV of Pd2Si to 0.43 eV of PdEr-silicide. Furthermore, 4.0x10-8Ωcm2 was extracted for the PdEr-silicide to n-Si(100) by the dopant segregation process.},
keywords={},
doi={10.1587/transele.E101.C.311},
ISSN={1745-1353},
month={May},}
Copy
TY - JOUR
TI - PdEr-Silicide Formation and Contact Resistivity Reduction to n-Si(100) Realized by Dopant Segregation Process
T2 - IEICE TRANSACTIONS on Electronics
SP - 311
EP - 316
AU - Shun-ichiro OHMI
AU - Yuya TSUKAMOTO
AU - Weiguang ZUO
AU - Yasushi MASAHIRO
PY - 2018
DO - 10.1587/transele.E101.C.311
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E101-C
IS - 5
JA - IEICE TRANSACTIONS on Electronics
Y1 - May 2018
AB - In this paper, we have investigated the PdEr-silicide formation utilizing a developed PdEr-alloy target for sputtering, and evaluated the contact resistivity of PdEr-silicide layer formed on n-Si(100) by dopant segregation process for the first time. Pd2Si and ErSi2 have same hexagonal structure, while the Schottky barrier height for electron (Φbn) is different as 0.75 eV and 0.28 eV, respectively. A 20 nm-thick PdEr-alloy layer was deposited on the n-Si(100) substrates utilizing a developed PdEr-alloy target by the RF magnetron sputtering at room temperature. Then, 10 nm-thick TiN encapsulating layer was in-situ deposited at room temperature. Next, silicidation was carried out by the RTA at 500℃ for 5 min in N2/4.9%H2 followed by the selective etching. From the J-V characteristics of fabricated Schottky diode, qΦbn was reduced from 0.75 eV of Pd2Si to 0.43 eV of PdEr-silicide. Furthermore, 4.0x10-8Ωcm2 was extracted for the PdEr-silicide to n-Si(100) by the dopant segregation process.
ER -
English
