In this paper, we have investigated the characteristics of PdYb-silicide layer formed by the silicidation of Pd/Yb/n-Si(100) stacked structures for the first time. Pd (12-20 nm)/Yb (0-8 nm) stacked layers were deposited on n-Si(100) substrates by the RF magnetron sputtering at room temperature. Then, 10 nm-thick HfN encapsulating layer was deposited at room temperature. Next, silicidation was carried out by the RTA at 500°C/1 min in N2 followed by the selective etching. From the J-V characteristics of fabricated Schottky diode, Schottky barrier height (SBH) for electron was reduced from 0.73 eV of Pd2Si to 0.4 eV of PdYb-silicide in case the Pd/Yb thicknesses were 14/6 nm, respectively.

In this paper, we have investigated the PdEr-silicide formation utilizing a developed PdEr-alloy target for sputtering, and evaluated the contact resistivity of PdEr-silicide layer formed on n-Si(100) by dopant segregation process for the first time. Pd2Si and ErSi2 have same hexagonal structure, while the Schottky barrier height for electron (Φbn) is different as 0.75 eV and 0.28 eV, respectively. A 20 nm-thick PdEr-alloy layer was deposited on the n-Si(100) substrates utilizing a developed PdEr-alloy target by the RF magnetron sputtering at room temperature. Then, 10 nm-thick TiN encapsulating layer was in-situ deposited at room temperature. Next, silicidation was carried out by the RTA at 500 for 5 min in N2/4.9%H2 followed by the selective etching. From the J-V characteristics of fabricated Schottky diode, qΦbn was reduced from 0.75 eV of Pd2Si to 0.43 eV of PdEr-silicide. Furthermore, 4.0x10-8Ωcm2 was extracted for the PdEr-silicide to n-Si(100) by the dopant segregation process.