Electron Injection of N-type Pentacene-Based OFET with Nitrogen-Doped LaB6 Bottom-Contact Electrodes
Summary :
In this study, the effect of nitrogen-doped (N-doped) LaB6 bottom-contact electrodes and interfacial layer (IL) on n-type pentacene-based organic field-effect transistor (OFET) was investigated. The scaled OFET was fabricated by using photolithography for bottom-contact electrodes. A 20-nm-thick N-doped LaB6 bottom-contact electrodes were formed on SiO2/n+-Si(100) substrate by RF sputtering followed by the surface treatment with sulfuric acid and hydrogen peroxide mixture (SPM) followed by diluted hydrofluoric acid (DHF; 1% HF) at room temperature (RT). Then, a 1.2-nm-thick N-doped LaB6 IL was deposited at RT. Finally, a 10-nm-thick pentacene film was deposited at 100°C followed by the Al back-gate electrode formation by using thermal evaporation. The current of electron injection was observed in the air due to the effect of surface treatment and N-doped LaB6 IL.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E101-C No.5 pp.323-327
- Publication Date
- 2018/05/01
- Publicized
- Online ISSN
- 1745-1353
- DOI
- 10.1587/transele.E101.C.323
- Type of Manuscript
- Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
- Category
Authors
Yasutaka MAEDA
Tokyo Institute of Technology
Mizuha HIROKI
Tokyo Institute of Technology
Shun-ichiro OHMI
Tokyo Institute of Technology
Keyword
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Yasutaka MAEDA, Mizuha HIROKI, Shun-ichiro OHMI, "Electron Injection of N-type Pentacene-Based OFET with Nitrogen-Doped LaB6 Bottom-Contact Electrodes" in IEICE TRANSACTIONS on Electronics,
vol. E101-C, no. 5, pp. 323-327, May 2018, doi: 10.1587/transele.E101.C.323.
Abstract: In this study, the effect of nitrogen-doped (N-doped) LaB6 bottom-contact electrodes and interfacial layer (IL) on n-type pentacene-based organic field-effect transistor (OFET) was investigated. The scaled OFET was fabricated by using photolithography for bottom-contact electrodes. A 20-nm-thick N-doped LaB6 bottom-contact electrodes were formed on SiO2/n+-Si(100) substrate by RF sputtering followed by the surface treatment with sulfuric acid and hydrogen peroxide mixture (SPM) followed by diluted hydrofluoric acid (DHF; 1% HF) at room temperature (RT). Then, a 1.2-nm-thick N-doped LaB6 IL was deposited at RT. Finally, a 10-nm-thick pentacene film was deposited at 100°C followed by the Al back-gate electrode formation by using thermal evaporation. The current of electron injection was observed in the air due to the effect of surface treatment and N-doped LaB6 IL.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.E101.C.323/_p
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@ARTICLE{e101-c_5_323,
author={Yasutaka MAEDA, Mizuha HIROKI, Shun-ichiro OHMI, },
journal={IEICE TRANSACTIONS on Electronics},
title={Electron Injection of N-type Pentacene-Based OFET with Nitrogen-Doped LaB6 Bottom-Contact Electrodes},
year={2018},
volume={E101-C},
number={5},
pages={323-327},
abstract={In this study, the effect of nitrogen-doped (N-doped) LaB6 bottom-contact electrodes and interfacial layer (IL) on n-type pentacene-based organic field-effect transistor (OFET) was investigated. The scaled OFET was fabricated by using photolithography for bottom-contact electrodes. A 20-nm-thick N-doped LaB6 bottom-contact electrodes were formed on SiO2/n+-Si(100) substrate by RF sputtering followed by the surface treatment with sulfuric acid and hydrogen peroxide mixture (SPM) followed by diluted hydrofluoric acid (DHF; 1% HF) at room temperature (RT). Then, a 1.2-nm-thick N-doped LaB6 IL was deposited at RT. Finally, a 10-nm-thick pentacene film was deposited at 100°C followed by the Al back-gate electrode formation by using thermal evaporation. The current of electron injection was observed in the air due to the effect of surface treatment and N-doped LaB6 IL.},
keywords={},
doi={10.1587/transele.E101.C.323},
ISSN={1745-1353},
month={May},}
Copy
TY - JOUR
TI - Electron Injection of N-type Pentacene-Based OFET with Nitrogen-Doped LaB6 Bottom-Contact Electrodes
T2 - IEICE TRANSACTIONS on Electronics
SP - 323
EP - 327
AU - Yasutaka MAEDA
AU - Mizuha HIROKI
AU - Shun-ichiro OHMI
PY - 2018
DO - 10.1587/transele.E101.C.323
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E101-C
IS - 5
JA - IEICE TRANSACTIONS on Electronics
Y1 - May 2018
AB - In this study, the effect of nitrogen-doped (N-doped) LaB6 bottom-contact electrodes and interfacial layer (IL) on n-type pentacene-based organic field-effect transistor (OFET) was investigated. The scaled OFET was fabricated by using photolithography for bottom-contact electrodes. A 20-nm-thick N-doped LaB6 bottom-contact electrodes were formed on SiO2/n+-Si(100) substrate by RF sputtering followed by the surface treatment with sulfuric acid and hydrogen peroxide mixture (SPM) followed by diluted hydrofluoric acid (DHF; 1% HF) at room temperature (RT). Then, a 1.2-nm-thick N-doped LaB6 IL was deposited at RT. Finally, a 10-nm-thick pentacene film was deposited at 100°C followed by the Al back-gate electrode formation by using thermal evaporation. The current of electron injection was observed in the air due to the effect of surface treatment and N-doped LaB6 IL.
ER -
English
