Growth Mechanism of Polar-Plane-Free Faceted InGaN Quantum Wells

Yoshinobu MATSUDA; Mitsuru FUNATO; Yoichi KAWAKAMI

doi:10.1587/transele.E101.C.532

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Growth Mechanism of Polar-Plane-Free Faceted InGaN Quantum Wells

Yoshinobu MATSUDA, Mitsuru FUNATO, Yoichi KAWAKAMI

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Summary :

The growth mechanisms of three-dimensionally (3D) faceted InGaN quantum wells (QWs) on (=1=12=2) GaN substrates are discussed. The structure is composed of (=1=12=2), {=110=1}, and {=1100} planes, and the cross sectional shape is similar to that of 3D QWs on (0001). However, the 3D QWs on (=1=12=2) and (0001) show quite different inter-facet variation of In compositions. To clarify this observation, the local thicknesses of constituent InN and GaN on the 3D GaN are fitted with a formula derived from the diffusion equation. It is suggested that the difference in the In incorporation efficiency of each crystallographic plane strongly affects the surface In adatom migration.

Publication: IEICE TRANSACTIONS on Electronics Vol.E101-C No.7 pp.532-536

Publication Date: 2018/07/01

Publicized

Online ISSN: 1745-1353

DOI: 10.1587/transele.E101.C.532

Type of Manuscript: Special Section INVITED PAPER (Special Section on Distinguished Papers in Photonics)

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Authors

Yoshinobu MATSUDA
  Kyoto University
Mitsuru FUNATO
  Kyoto University
Yoichi KAWAKAMI
  Kyoto University

Keyword

III-nitride semiconductor, three-dimensional structure, polychromatic emission

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Yoshinobu MATSUDA, Mitsuru FUNATO, Yoichi KAWAKAMI, "Growth Mechanism of Polar-Plane-Free Faceted InGaN Quantum Wells" in IEICE TRANSACTIONS on Electronics, vol. E101-C, no. 7, pp. 532-536, July 2018, doi: 10.1587/transele.E101.C.532.
Abstract: The growth mechanisms of three-dimensionally (3D) faceted InGaN quantum wells (QWs) on (=1=12=2) GaN substrates are discussed. The structure is composed of (=1=12=2), {=110=1}, and {=1100} planes, and the cross sectional shape is similar to that of 3D QWs on (0001). However, the 3D QWs on (=1=12=2) and (0001) show quite different inter-facet variation of In compositions. To clarify this observation, the local thicknesses of constituent InN and GaN on the 3D GaN are fitted with a formula derived from the diffusion equation. It is suggested that the difference in the In incorporation efficiency of each crystallographic plane strongly affects the surface In adatom migration.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.E101.C.532/_p

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@ARTICLE{e101-c_7_532,
author={Yoshinobu MATSUDA, Mitsuru FUNATO, Yoichi KAWAKAMI, },
journal={IEICE TRANSACTIONS on Electronics},
title={Growth Mechanism of Polar-Plane-Free Faceted InGaN Quantum Wells},
year={2018},
volume={E101-C},
number={7},
pages={532-536},
abstract={The growth mechanisms of three-dimensionally (3D) faceted InGaN quantum wells (QWs) on (=1=12=2) GaN substrates are discussed. The structure is composed of (=1=12=2), {=110=1}, and {=1100} planes, and the cross sectional shape is similar to that of 3D QWs on (0001). However, the 3D QWs on (=1=12=2) and (0001) show quite different inter-facet variation of In compositions. To clarify this observation, the local thicknesses of constituent InN and GaN on the 3D GaN are fitted with a formula derived from the diffusion equation. It is suggested that the difference in the In incorporation efficiency of each crystallographic plane strongly affects the surface In adatom migration.},
keywords={},
doi={10.1587/transele.E101.C.532},
ISSN={1745-1353},
month={July},}

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TY - JOUR
TI - Growth Mechanism of Polar-Plane-Free Faceted InGaN Quantum Wells
T2 - IEICE TRANSACTIONS on Electronics
SP - 532
EP - 536
AU - Yoshinobu MATSUDA
AU - Mitsuru FUNATO
AU - Yoichi KAWAKAMI
PY - 2018
DO - 10.1587/transele.E101.C.532
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E101-C
IS - 7
JA - IEICE TRANSACTIONS on Electronics
Y1 - July 2018
AB - The growth mechanisms of three-dimensionally (3D) faceted InGaN quantum wells (QWs) on (=1=12=2) GaN substrates are discussed. The structure is composed of (=1=12=2), {=110=1}, and {=1100} planes, and the cross sectional shape is similar to that of 3D QWs on (0001). However, the 3D QWs on (=1=12=2) and (0001) show quite different inter-facet variation of In compositions. To clarify this observation, the local thicknesses of constituent InN and GaN on the 3D GaN are fitted with a formula derived from the diffusion equation. It is suggested that the difference in the In incorporation efficiency of each crystallographic plane strongly affects the surface In adatom migration.
ER -