IEICE TRANSACTIONS on Electronics
Numerical Simulation of Single-Electron Tunneling in Random Arrays of Small Tunnel Junctions Formed by Percolation of Conductive Nanoparticles
Summary :
We numerically simulated electrical properties, i.e., the resistance and Coulomb blockade threshold, of randomly-placed conductive nanoparticles. In simulation, tunnel junctions were assumed to be formed between neighboring particle-particle and particle-electrode connections. On a plane of triangle 100×100 grids, three electrodes, the drain, source, and gate, were defined. After random placements of conductive particles, the connection between the drain and source electrodes were evaluated with keeping the gate electrode disconnected. The resistance was obtained by use of a SPICE-like simulator, whereas the Coulomb blockade threshold was determined from the current-voltage characteristics simulated using a Monte-Carlo simulator. Strong linear correlation between the resistance and threshold voltage was confirmed, which agreed with results for uniform one-dimensional arrays.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E101-C No.10 pp.836-839
- Publication Date
- 2018/10/01
- Publicized
- Online ISSN
- 1745-1353
- DOI
- 10.1587/transele.E101.C.836
- Type of Manuscript
- BRIEF PAPER
- Category
- Microwaves, Millimeter-Waves
Authors
Yoshinao MIZUGAKI
University of Electro-Communications
Hiroshi SHIMADA
University of Electro-Communications
Ayumi HIRANO-IWATA
Tohoku Univeristy
Fumihiko HIROSE
Yamagata University
Keyword
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Yoshinao MIZUGAKI, Hiroshi SHIMADA, Ayumi HIRANO-IWATA, Fumihiko HIROSE, "Numerical Simulation of Single-Electron Tunneling in Random Arrays of Small Tunnel Junctions Formed by Percolation of Conductive Nanoparticles" in IEICE TRANSACTIONS on Electronics,
vol. E101-C, no. 10, pp. 836-839, October 2018, doi: 10.1587/transele.E101.C.836.
Abstract: We numerically simulated electrical properties, i.e., the resistance and Coulomb blockade threshold, of randomly-placed conductive nanoparticles. In simulation, tunnel junctions were assumed to be formed between neighboring particle-particle and particle-electrode connections. On a plane of triangle 100×100 grids, three electrodes, the drain, source, and gate, were defined. After random placements of conductive particles, the connection between the drain and source electrodes were evaluated with keeping the gate electrode disconnected. The resistance was obtained by use of a SPICE-like simulator, whereas the Coulomb blockade threshold was determined from the current-voltage characteristics simulated using a Monte-Carlo simulator. Strong linear correlation between the resistance and threshold voltage was confirmed, which agreed with results for uniform one-dimensional arrays.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.E101.C.836/_p
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@ARTICLE{e101-c_10_836,
author={Yoshinao MIZUGAKI, Hiroshi SHIMADA, Ayumi HIRANO-IWATA, Fumihiko HIROSE, },
journal={IEICE TRANSACTIONS on Electronics},
title={Numerical Simulation of Single-Electron Tunneling in Random Arrays of Small Tunnel Junctions Formed by Percolation of Conductive Nanoparticles},
year={2018},
volume={E101-C},
number={10},
pages={836-839},
abstract={We numerically simulated electrical properties, i.e., the resistance and Coulomb blockade threshold, of randomly-placed conductive nanoparticles. In simulation, tunnel junctions were assumed to be formed between neighboring particle-particle and particle-electrode connections. On a plane of triangle 100×100 grids, three electrodes, the drain, source, and gate, were defined. After random placements of conductive particles, the connection between the drain and source electrodes were evaluated with keeping the gate electrode disconnected. The resistance was obtained by use of a SPICE-like simulator, whereas the Coulomb blockade threshold was determined from the current-voltage characteristics simulated using a Monte-Carlo simulator. Strong linear correlation between the resistance and threshold voltage was confirmed, which agreed with results for uniform one-dimensional arrays.},
keywords={},
doi={10.1587/transele.E101.C.836},
ISSN={1745-1353},
month={October},}
Copy
TY - JOUR
TI - Numerical Simulation of Single-Electron Tunneling in Random Arrays of Small Tunnel Junctions Formed by Percolation of Conductive Nanoparticles
T2 - IEICE TRANSACTIONS on Electronics
SP - 836
EP - 839
AU - Yoshinao MIZUGAKI
AU - Hiroshi SHIMADA
AU - Ayumi HIRANO-IWATA
AU - Fumihiko HIROSE
PY - 2018
DO - 10.1587/transele.E101.C.836
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E101-C
IS - 10
JA - IEICE TRANSACTIONS on Electronics
Y1 - October 2018
AB - We numerically simulated electrical properties, i.e., the resistance and Coulomb blockade threshold, of randomly-placed conductive nanoparticles. In simulation, tunnel junctions were assumed to be formed between neighboring particle-particle and particle-electrode connections. On a plane of triangle 100×100 grids, three electrodes, the drain, source, and gate, were defined. After random placements of conductive particles, the connection between the drain and source electrodes were evaluated with keeping the gate electrode disconnected. The resistance was obtained by use of a SPICE-like simulator, whereas the Coulomb blockade threshold was determined from the current-voltage characteristics simulated using a Monte-Carlo simulator. Strong linear correlation between the resistance and threshold voltage was confirmed, which agreed with results for uniform one-dimensional arrays.
ER -
English
