We numerically simulated electrical properties, i.e., the resistance and Coulomb blockade threshold, of randomly-placed conductive nanoparticles. In simulation, tunnel junctions were assumed to be formed between neighboring particle-particle and particle-electrode connections. On a plane of triangle 100×100 grids, three electrodes, the drain, source, and gate, were defined. After random placements of conductive particles, the connection between the drain and source electrodes were evaluated with keeping the gate electrode disconnected. The resistance was obtained by use of a SPICE-like simulator, whereas the Coulomb blockade threshold was determined from the current-voltage characteristics simulated using a Monte-Carlo simulator. Strong linear correlation between the resistance and threshold voltage was confirmed, which agreed with results for uniform one-dimensional arrays.

Gold nanoparticles (GNPs) are often used as island electrodes of single-electron (SE) devices. One of technical challenges in fabrication of SE devices with GNPs is the placement of GNPs in a nanogap between two lead electrodes. Utilization of dielectrophoresis (DEP) phenomena is one of possible solutions for this challenge, whereas the fabrication process with DEP includes stochastic aspects. In this brief paper, we present our experimental results on electric resistance of GNP arrays assembled by DEP. More than 300 pairs of electrodes were investigated under various DEP conditions by trial and error approach. We evaluated the relationship between the DEP conditions and the electric resistance of assembled GNP arrays, which would indicate possible DEP conditions for fabrication of SE devices.