Gold nanoparticles (GNPs) are often used as island electrodes of single-electron (SE) devices. One of technical challenges in fabrication of SE devices with GNPs is the placement of GNPs in a nanogap between two lead electrodes. Utilization of dielectrophoresis (DEP) phenomena is one of possible solutions for this challenge, whereas the fabrication process with DEP includes stochastic aspects. In this brief paper, we present our experimental results on electric resistance of GNP arrays assembled by DEP. More than 300 pairs of electrodes were investigated under various DEP conditions by trial and error approach. We evaluated the relationship between the DEP conditions and the electric resistance of assembled GNP arrays, which would indicate possible DEP conditions for fabrication of SE devices.

We present our design and operation of a 6-bit quasi-triangle voltage waveform generator comprising three circuit blocks; an improved variable Pulse Number Multiplier (variable-PNM), a Code Generator (CG), and a Double-Flux-Quantum Amplifier (DFQA). They are integrated into a single chip using a niobium Josephson junction technology. While the multiplication factor of our previous m-bit variable-PNM was limited between 2m-1 and 2m, that of the improved one is extended between 1 and 2m. Correct operations of the 6-bit variable-PNM are confirmed in low-speed testing with respect to the codes from the CG, whereas generation of a 6-bit, 0.20mVpp quasi-triangle voltage waveform is demonstrated with the 10-fold DFQA in high-speed testing.

We numerically simulated electrical properties, i.e., the resistance and Coulomb blockade threshold, of randomly-placed conductive nanoparticles. In simulation, tunnel junctions were assumed to be formed between neighboring particle-particle and particle-electrode connections. On a plane of triangle 100×100 grids, three electrodes, the drain, source, and gate, were defined. After random placements of conductive particles, the connection between the drain and source electrodes were evaluated with keeping the gate electrode disconnected. The resistance was obtained by use of a SPICE-like simulator, whereas the Coulomb blockade threshold was determined from the current-voltage characteristics simulated using a Monte-Carlo simulator. Strong linear correlation between the resistance and threshold voltage was confirmed, which agreed with results for uniform one-dimensional arrays.

We experimentally evaluated random number sequences generated by a superconducting hardware random number generator composed of a Josephson-junction oscillator, a rapid-single-flux-quantum (RSFQ) toggle flip-flop (TFF), and an RSFQ AND gate. Test circuits were fabricated using a 10 kA/cm2 Nb/AlOx/Nb integration process. Measurements were conducted in a liquid helium bath. The random numbers were generated for a trigger frequency of 500 kHz under the oscillating Josephson-junction at 29 GHz. 26 random number sequences of 20 kb length were evaluated for bias voltages between 2.0 and 2.7 mV. The NIST FIPS PUBS 140-2 tests were used for the evaluation. 100% pass rates were confirmed at the bias voltages of 2.5 and 2.6 mV. We found that the Monobit test limited the pass rates. As numerical simulations suggested, a detailed evaluation for the probability of obtaining “1” demonstrated the monotonical dependence on the bias voltage.

A readout technique using single-flux-quantum (SFQ) circuits enables superconducting single photon detectors (SSPDs) to operate at further high-speed, where a mutually-coupled dc-to-SFQ (MC-dc/SFQ) converter is used as an interface between SSPDs and SFQ circuits. In this work, we investigated pulse response of the MC-dc/SFQ converter. We employed on-chip pulse generators to evaluate pulse response of the MC-dc/SFQ converter for various pulses. The MC-dc/SFQ converter correctly operated for the pulse current with the amplitude of 52,$mu$A and the width of 179,ps. In addition, we examined influence of the pulse amplitude and width to operation of the MC-dc/SFQ converter by numerical simulation. The simulation results indicated that the MC-dc/SFQ converter had wide operation margins for pulse current with amplitudes of 30--60,$mu$A irrespective of the pulse widths.

We numerically demonstrated the improvement of single-electron (SE) digital logic gates by utilizing SE input discretizers (IDs). The parameters of the IDs were adjusted to achieve SE tunneling at the threshold voltage designed for switching. An SE four-junction inverter (FJI) with an ID (ID-FJI) had steep switching characteristics between the high and low output voltage levels. The limiting temperature and the critical parameter margins were evaluated. An SE NAND gate with IDs also achieved abrupt switching characteristics between output logic levels.

Superconducting integrated circuits should be operated at low temperature below a half of their critical temperatures. Thermal heat from a bias resistor could rise the temperature in Josephson junctions, and would reduce their critical currents. In this study, we estimate the temperature in a Josephson junction heated by a bias resistor at the bath temperature of 4.2 K, and introduce a parameter β that connects the thermal heat from a bias resistor and the temperature elevation of a Josephson junction. By using β, the temperature in the Josephson junction can be estimated as functions of the current through the resistor.

Recently, we demonstrated a rapid-single-flux-quantum NOT gate comprising a toggle storage loop. In this paper, we present our design and operation of a NOR gate that is a straightforward extension of the NOT gate by attaching a confluence buffer. Parameter margins wider than ±28% were confirmed in simulation. Functional tests using Nb integrated circuits demonstrated correct NOR operation with a bias margin of ±21%.