Analysis of Super-Steep Subthreshold Slope Body-Tied SOI MOSFET and its Possibility for Ultralow Voltage Application
Summary :
In this paper, we review a super-steep subthreshold slope (SS) (<1 mV/dec) body-tied (BT) silicon on insulator (SOI) metal oxide semiconductor field effect transistor (MOSFET) fabricated with 0.15 µm SOI technology and discuss the possibility of its use in ultralow voltage applications. The mechanism of the super-steep SS in the BT SOI MOSFET was investigated with technology computer-aided design simulation. The gate length/width and Si thickness optimizations promise further reductions in operation voltage, as well as improvement of the ION/IOFF ratio. In addition, we demonstrated control of the threshold voltage and hysteresis characteristics using the substrate and body bias in the BT SOI MOSFET.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E101-C No.11 pp.916-922
- Publication Date
- 2018/11/01
- Publicized
- Online ISSN
- 1745-1353
- DOI
- 10.1587/transele.E101.C.916
- Type of Manuscript
- PAPER
- Category
- Semiconductor Materials and Devices
Authors
Takayuki MORI
Kanazawa Institute of Technology
Jiro IDA
Kanazawa Institute of Technology
Keyword
Latest Issue
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Takayuki MORI, Jiro IDA, "Analysis of Super-Steep Subthreshold Slope Body-Tied SOI MOSFET and its Possibility for Ultralow Voltage Application" in IEICE TRANSACTIONS on Electronics,
vol. E101-C, no. 11, pp. 916-922, November 2018, doi: 10.1587/transele.E101.C.916.
Abstract: In this paper, we review a super-steep subthreshold slope (SS) (<1 mV/dec) body-tied (BT) silicon on insulator (SOI) metal oxide semiconductor field effect transistor (MOSFET) fabricated with 0.15 µm SOI technology and discuss the possibility of its use in ultralow voltage applications. The mechanism of the super-steep SS in the BT SOI MOSFET was investigated with technology computer-aided design simulation. The gate length/width and Si thickness optimizations promise further reductions in operation voltage, as well as improvement of the ION/IOFF ratio. In addition, we demonstrated control of the threshold voltage and hysteresis characteristics using the substrate and body bias in the BT SOI MOSFET.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.E101.C.916/_p
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@ARTICLE{e101-c_11_916,
author={Takayuki MORI, Jiro IDA, },
journal={IEICE TRANSACTIONS on Electronics},
title={Analysis of Super-Steep Subthreshold Slope Body-Tied SOI MOSFET and its Possibility for Ultralow Voltage Application},
year={2018},
volume={E101-C},
number={11},
pages={916-922},
abstract={In this paper, we review a super-steep subthreshold slope (SS) (<1 mV/dec) body-tied (BT) silicon on insulator (SOI) metal oxide semiconductor field effect transistor (MOSFET) fabricated with 0.15 µm SOI technology and discuss the possibility of its use in ultralow voltage applications. The mechanism of the super-steep SS in the BT SOI MOSFET was investigated with technology computer-aided design simulation. The gate length/width and Si thickness optimizations promise further reductions in operation voltage, as well as improvement of the ION/IOFF ratio. In addition, we demonstrated control of the threshold voltage and hysteresis characteristics using the substrate and body bias in the BT SOI MOSFET.},
keywords={},
doi={10.1587/transele.E101.C.916},
ISSN={1745-1353},
month={November},}
Copy
TY - JOUR
TI - Analysis of Super-Steep Subthreshold Slope Body-Tied SOI MOSFET and its Possibility for Ultralow Voltage Application
T2 - IEICE TRANSACTIONS on Electronics
SP - 916
EP - 922
AU - Takayuki MORI
AU - Jiro IDA
PY - 2018
DO - 10.1587/transele.E101.C.916
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E101-C
IS - 11
JA - IEICE TRANSACTIONS on Electronics
Y1 - November 2018
AB - In this paper, we review a super-steep subthreshold slope (SS) (<1 mV/dec) body-tied (BT) silicon on insulator (SOI) metal oxide semiconductor field effect transistor (MOSFET) fabricated with 0.15 µm SOI technology and discuss the possibility of its use in ultralow voltage applications. The mechanism of the super-steep SS in the BT SOI MOSFET was investigated with technology computer-aided design simulation. The gate length/width and Si thickness optimizations promise further reductions in operation voltage, as well as improvement of the ION/IOFF ratio. In addition, we demonstrated control of the threshold voltage and hysteresis characteristics using the substrate and body bias in the BT SOI MOSFET.
ER -
English
