IEICE TRANSACTIONS on Electronics
Analytical and Numerical Study of the Impact of Halos on Surrounding-Gate MOSFETs
Summary :
Halo doping profile is used in nanoscale surrounding-gate MOSFETs to suppress short channel effect and improve current driving capability. Analytical surface potential and threshold voltage models are derived based on the analytical solution of Poisson's equation for the fully depleted symmetric and asymmetric halo-doped MOSFETs. The validity of the analytical models is verified using 3D numerical simulation. The performance of the halo-doped MOSFETs are studied and compared with the uniformly doped surrounding-gate MOSFETs. It is shown that the halo-doped channel can suppress threshold voltage roll-off and drain-induced barrier lowering, and improve carrier transport efficiency. The asymmetric halo structure is better in suppressing hot carrier effect than the symmetric halo structure.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E92-C No.4 pp.558-563
- Publication Date
- 2009/04/01
- Publicized
- Online ISSN
- 1745-1353
- DOI
- 10.1587/transele.E92.C.558
- Type of Manuscript
- PAPER
- Category
- Semiconductor Materials and Devices
Authors
Keyword
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Zunchao LI, Ruizhi ZHANG, Feng LIANG, Zhiyong YANG, "Analytical and Numerical Study of the Impact of Halos on Surrounding-Gate MOSFETs" in IEICE TRANSACTIONS on Electronics,
vol. E92-C, no. 4, pp. 558-563, April 2009, doi: 10.1587/transele.E92.C.558.
Abstract: Halo doping profile is used in nanoscale surrounding-gate MOSFETs to suppress short channel effect and improve current driving capability. Analytical surface potential and threshold voltage models are derived based on the analytical solution of Poisson's equation for the fully depleted symmetric and asymmetric halo-doped MOSFETs. The validity of the analytical models is verified using 3D numerical simulation. The performance of the halo-doped MOSFETs are studied and compared with the uniformly doped surrounding-gate MOSFETs. It is shown that the halo-doped channel can suppress threshold voltage roll-off and drain-induced barrier lowering, and improve carrier transport efficiency. The asymmetric halo structure is better in suppressing hot carrier effect than the symmetric halo structure.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.E92.C.558/_p
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@ARTICLE{e92-c_4_558,
author={Zunchao LI, Ruizhi ZHANG, Feng LIANG, Zhiyong YANG, },
journal={IEICE TRANSACTIONS on Electronics},
title={Analytical and Numerical Study of the Impact of Halos on Surrounding-Gate MOSFETs},
year={2009},
volume={E92-C},
number={4},
pages={558-563},
abstract={Halo doping profile is used in nanoscale surrounding-gate MOSFETs to suppress short channel effect and improve current driving capability. Analytical surface potential and threshold voltage models are derived based on the analytical solution of Poisson's equation for the fully depleted symmetric and asymmetric halo-doped MOSFETs. The validity of the analytical models is verified using 3D numerical simulation. The performance of the halo-doped MOSFETs are studied and compared with the uniformly doped surrounding-gate MOSFETs. It is shown that the halo-doped channel can suppress threshold voltage roll-off and drain-induced barrier lowering, and improve carrier transport efficiency. The asymmetric halo structure is better in suppressing hot carrier effect than the symmetric halo structure.},
keywords={},
doi={10.1587/transele.E92.C.558},
ISSN={1745-1353},
month={April},}
Copy
TY - JOUR
TI - Analytical and Numerical Study of the Impact of Halos on Surrounding-Gate MOSFETs
T2 - IEICE TRANSACTIONS on Electronics
SP - 558
EP - 563
AU - Zunchao LI
AU - Ruizhi ZHANG
AU - Feng LIANG
AU - Zhiyong YANG
PY - 2009
DO - 10.1587/transele.E92.C.558
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E92-C
IS - 4
JA - IEICE TRANSACTIONS on Electronics
Y1 - April 2009
AB - Halo doping profile is used in nanoscale surrounding-gate MOSFETs to suppress short channel effect and improve current driving capability. Analytical surface potential and threshold voltage models are derived based on the analytical solution of Poisson's equation for the fully depleted symmetric and asymmetric halo-doped MOSFETs. The validity of the analytical models is verified using 3D numerical simulation. The performance of the halo-doped MOSFETs are studied and compared with the uniformly doped surrounding-gate MOSFETs. It is shown that the halo-doped channel can suppress threshold voltage roll-off and drain-induced barrier lowering, and improve carrier transport efficiency. The asymmetric halo structure is better in suppressing hot carrier effect than the symmetric halo structure.
ER -
English
