Simulation of Retention Characteristics in Double-Gate Structure Multi-Bit SONOS Flash Memory
Summary :
This paper presents a detailed study of the retention characteristics in scaled multi-bit SONOS flash memories. By calculating the oxide field and tunneling currents, we evaluate the charge trapping mechanism. We calculate transient retention dynamics with the ONO fields, trapped charge, and tunneling currents. All the parameters were obtained by physics-based equations and without any fitting parameters or optimization steps. The results can be used with nanoscale nonvolatile memory. This modeling accounts for the VT shift as a function of trapped charge density, time, silicon fin thickness and type of trapped charge, and can be used for optimizing the ONO geometry and parameters for maximum performance.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E92-C No.5 pp.659-663
- Publication Date
- 2009/05/01
- Publicized
- Online ISSN
- 1745-1353
- DOI
- 10.1587/transele.E92.C.659
- Type of Manuscript
- Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
- Category
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Doo-Hyun KIM, Il Han PARK, Seongjae CHO, Jong Duk LEE, Hyungcheol SHIN, Byung-Gook PARK, "Simulation of Retention Characteristics in Double-Gate Structure Multi-Bit SONOS Flash Memory" in IEICE TRANSACTIONS on Electronics,
vol. E92-C, no. 5, pp. 659-663, May 2009, doi: 10.1587/transele.E92.C.659.
Abstract: This paper presents a detailed study of the retention characteristics in scaled multi-bit SONOS flash memories. By calculating the oxide field and tunneling currents, we evaluate the charge trapping mechanism. We calculate transient retention dynamics with the ONO fields, trapped charge, and tunneling currents. All the parameters were obtained by physics-based equations and without any fitting parameters or optimization steps. The results can be used with nanoscale nonvolatile memory. This modeling accounts for the VT shift as a function of trapped charge density, time, silicon fin thickness and type of trapped charge, and can be used for optimizing the ONO geometry and parameters for maximum performance.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.E92.C.659/_p
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@ARTICLE{e92-c_5_659,
author={Doo-Hyun KIM, Il Han PARK, Seongjae CHO, Jong Duk LEE, Hyungcheol SHIN, Byung-Gook PARK, },
journal={IEICE TRANSACTIONS on Electronics},
title={Simulation of Retention Characteristics in Double-Gate Structure Multi-Bit SONOS Flash Memory},
year={2009},
volume={E92-C},
number={5},
pages={659-663},
abstract={This paper presents a detailed study of the retention characteristics in scaled multi-bit SONOS flash memories. By calculating the oxide field and tunneling currents, we evaluate the charge trapping mechanism. We calculate transient retention dynamics with the ONO fields, trapped charge, and tunneling currents. All the parameters were obtained by physics-based equations and without any fitting parameters or optimization steps. The results can be used with nanoscale nonvolatile memory. This modeling accounts for the VT shift as a function of trapped charge density, time, silicon fin thickness and type of trapped charge, and can be used for optimizing the ONO geometry and parameters for maximum performance.},
keywords={},
doi={10.1587/transele.E92.C.659},
ISSN={1745-1353},
month={May},}
Copy
TY - JOUR
TI - Simulation of Retention Characteristics in Double-Gate Structure Multi-Bit SONOS Flash Memory
T2 - IEICE TRANSACTIONS on Electronics
SP - 659
EP - 663
AU - Doo-Hyun KIM
AU - Il Han PARK
AU - Seongjae CHO
AU - Jong Duk LEE
AU - Hyungcheol SHIN
AU - Byung-Gook PARK
PY - 2009
DO - 10.1587/transele.E92.C.659
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E92-C
IS - 5
JA - IEICE TRANSACTIONS on Electronics
Y1 - May 2009
AB - This paper presents a detailed study of the retention characteristics in scaled multi-bit SONOS flash memories. By calculating the oxide field and tunneling currents, we evaluate the charge trapping mechanism. We calculate transient retention dynamics with the ONO fields, trapped charge, and tunneling currents. All the parameters were obtained by physics-based equations and without any fitting parameters or optimization steps. The results can be used with nanoscale nonvolatile memory. This modeling accounts for the VT shift as a function of trapped charge density, time, silicon fin thickness and type of trapped charge, and can be used for optimizing the ONO geometry and parameters for maximum performance.
ER -
English
