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Oxide Thin Film Transistor Circuits for Transparent RFID Applications
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Oxide material can make transparent devices with transparent electrodes. We developed a transparent oscillator and rectifier circuits with oxide TFTs. The source/drain and gate electrodes were made by indium thin oxide (ITO), and active layer made by transparent material of IGZO (Indium Gallium Zinc Oxide) on a glass substrate. The RC oscillator was composed of bootstrapped inverters, and 813 kHz oscillation frequency was accomplished at VDD = 15 V. For DC voltage generation from RF, transparent rectifier was fabricated and evaluated. This DC voltage from rectifier powered to the oscillator which operated successfully to create RF. For data transmission, RF transmission was evaluated with RF from the transparent oscillator. An antenna was connected to the oscillator and RF transmission to a receiving antenna was verified. Through this transmission antenna, RF was transmitted to a receiving antenna successfully. For transparent system of RFID, transparent antenna was developed and verified sending and receiving of data.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E93-C No.10 pp.1504-1510
- Publication Date
- 2010/10/01
- Publicized
- Online ISSN
- 1745-1353
- DOI
- 10.1587/transele.E93.C.1504
- Type of Manuscript
- Special Section INVITED PAPER (Special Section on Frontier of Thin-Film Transistor Technology)
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Seung Hyun CHO, Sang Woo KIM, Woo Seok CHEONG, Chun Won BYUN, Chi-Sun HWANG, Kyoung Ik CHO, Byung Seong BAE, "Oxide Thin Film Transistor Circuits for Transparent RFID Applications" in IEICE TRANSACTIONS on Electronics,
vol. E93-C, no. 10, pp. 1504-1510, October 2010, doi: 10.1587/transele.E93.C.1504.
Abstract: Oxide material can make transparent devices with transparent electrodes. We developed a transparent oscillator and rectifier circuits with oxide TFTs. The source/drain and gate electrodes were made by indium thin oxide (ITO), and active layer made by transparent material of IGZO (Indium Gallium Zinc Oxide) on a glass substrate. The RC oscillator was composed of bootstrapped inverters, and 813 kHz oscillation frequency was accomplished at VDD = 15 V. For DC voltage generation from RF, transparent rectifier was fabricated and evaluated. This DC voltage from rectifier powered to the oscillator which operated successfully to create RF. For data transmission, RF transmission was evaluated with RF from the transparent oscillator. An antenna was connected to the oscillator and RF transmission to a receiving antenna was verified. Through this transmission antenna, RF was transmitted to a receiving antenna successfully. For transparent system of RFID, transparent antenna was developed and verified sending and receiving of data.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.E93.C.1504/_p
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@ARTICLE{e93-c_10_1504,
author={Seung Hyun CHO, Sang Woo KIM, Woo Seok CHEONG, Chun Won BYUN, Chi-Sun HWANG, Kyoung Ik CHO, Byung Seong BAE, },
journal={IEICE TRANSACTIONS on Electronics},
title={Oxide Thin Film Transistor Circuits for Transparent RFID Applications},
year={2010},
volume={E93-C},
number={10},
pages={1504-1510},
abstract={Oxide material can make transparent devices with transparent electrodes. We developed a transparent oscillator and rectifier circuits with oxide TFTs. The source/drain and gate electrodes were made by indium thin oxide (ITO), and active layer made by transparent material of IGZO (Indium Gallium Zinc Oxide) on a glass substrate. The RC oscillator was composed of bootstrapped inverters, and 813 kHz oscillation frequency was accomplished at VDD = 15 V. For DC voltage generation from RF, transparent rectifier was fabricated and evaluated. This DC voltage from rectifier powered to the oscillator which operated successfully to create RF. For data transmission, RF transmission was evaluated with RF from the transparent oscillator. An antenna was connected to the oscillator and RF transmission to a receiving antenna was verified. Through this transmission antenna, RF was transmitted to a receiving antenna successfully. For transparent system of RFID, transparent antenna was developed and verified sending and receiving of data.},
keywords={},
doi={10.1587/transele.E93.C.1504},
ISSN={1745-1353},
month={October},}
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TY - JOUR
TI - Oxide Thin Film Transistor Circuits for Transparent RFID Applications
T2 - IEICE TRANSACTIONS on Electronics
SP - 1504
EP - 1510
AU - Seung Hyun CHO
AU - Sang Woo KIM
AU - Woo Seok CHEONG
AU - Chun Won BYUN
AU - Chi-Sun HWANG
AU - Kyoung Ik CHO
AU - Byung Seong BAE
PY - 2010
DO - 10.1587/transele.E93.C.1504
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E93-C
IS - 10
JA - IEICE TRANSACTIONS on Electronics
Y1 - October 2010
AB - Oxide material can make transparent devices with transparent electrodes. We developed a transparent oscillator and rectifier circuits with oxide TFTs. The source/drain and gate electrodes were made by indium thin oxide (ITO), and active layer made by transparent material of IGZO (Indium Gallium Zinc Oxide) on a glass substrate. The RC oscillator was composed of bootstrapped inverters, and 813 kHz oscillation frequency was accomplished at VDD = 15 V. For DC voltage generation from RF, transparent rectifier was fabricated and evaluated. This DC voltage from rectifier powered to the oscillator which operated successfully to create RF. For data transmission, RF transmission was evaluated with RF from the transparent oscillator. An antenna was connected to the oscillator and RF transmission to a receiving antenna was verified. Through this transmission antenna, RF was transmitted to a receiving antenna successfully. For transparent system of RFID, transparent antenna was developed and verified sending and receiving of data.
ER -
English
