Random Telegraph Signals in Two-Dimensional Array of Si Quantum Dots

Katsunori MAKIHARA; Mitsuhisa IKEDA; Akira KAWANAMI; Seiichi MIYAZAKI

doi:10.1587/transele.E93.C.569

Random Telegraph Signals in Two-Dimensional Array of Si Quantum Dots

Katsunori MAKIHARA, Mitsuhisa IKEDA, Akira KAWANAMI, Seiichi MIYAZAKI

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Silicon-quantum-dots (Si-QDs) with an areal density as high as 10¹² cm^{- 2} were self-assembled on thermally-grown SiO₂ by low pressure CVD using Si2H6, in which OH-terminated SiO₂ surface prior to the Si CVD was exposed to GeH₄ to create nucleation sites uniformly. After thermal oxidation of Si-QDs surface, two-dimensional electronic transport through the Si-QDs array was measured with co-planar Al electrodes evaporated on the array surface. Random telegraph signals were clearly observed at constant applied bias conditions in dark condition and under light irradiation at room temperature. The result indicates the charging and discharging of a dot adjacent to the percolation current path in the dots array.

Publication: IEICE TRANSACTIONS on Electronics Vol.E93-C No.5 pp.569-572

Publication Date: 2010/05/01

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Online ISSN: 1745-1353

DOI: 10.1587/transele.E93.C.569

Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)

Category: Emerging Devices

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Katsunori MAKIHARA, Mitsuhisa IKEDA, Akira KAWANAMI, Seiichi MIYAZAKI, "Random Telegraph Signals in Two-Dimensional Array of Si Quantum Dots" in IEICE TRANSACTIONS on Electronics, vol. E93-C, no. 5, pp. 569-572, May 2010, doi: 10.1587/transele.E93.C.569.
Abstract: Silicon-quantum-dots (Si-QDs) with an areal density as high as 10¹² cm^{- 2} were self-assembled on thermally-grown SiO₂ by low pressure CVD using Si2H6, in which OH-terminated SiO₂ surface prior to the Si CVD was exposed to GeH₄ to create nucleation sites uniformly. After thermal oxidation of Si-QDs surface, two-dimensional electronic transport through the Si-QDs array was measured with co-planar Al electrodes evaporated on the array surface. Random telegraph signals were clearly observed at constant applied bias conditions in dark condition and under light irradiation at room temperature. The result indicates the charging and discharging of a dot adjacent to the percolation current path in the dots array.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.E93.C.569/_p

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@ARTICLE{e93-c_5_569,
author={Katsunori MAKIHARA, Mitsuhisa IKEDA, Akira KAWANAMI, Seiichi MIYAZAKI, },
journal={IEICE TRANSACTIONS on Electronics},
title={Random Telegraph Signals in Two-Dimensional Array of Si Quantum Dots},
year={2010},
volume={E93-C},
number={5},
pages={569-572},
abstract={Silicon-quantum-dots (Si-QDs) with an areal density as high as 10¹² cm^{- 2} were self-assembled on thermally-grown SiO₂ by low pressure CVD using Si2H6, in which OH-terminated SiO₂ surface prior to the Si CVD was exposed to GeH₄ to create nucleation sites uniformly. After thermal oxidation of Si-QDs surface, two-dimensional electronic transport through the Si-QDs array was measured with co-planar Al electrodes evaporated on the array surface. Random telegraph signals were clearly observed at constant applied bias conditions in dark condition and under light irradiation at room temperature. The result indicates the charging and discharging of a dot adjacent to the percolation current path in the dots array.},
keywords={},
doi={10.1587/transele.E93.C.569},
ISSN={1745-1353},
month={May},}

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TY - JOUR
TI - Random Telegraph Signals in Two-Dimensional Array of Si Quantum Dots
T2 - IEICE TRANSACTIONS on Electronics
SP - 569
EP - 572
AU - Katsunori MAKIHARA
AU - Mitsuhisa IKEDA
AU - Akira KAWANAMI
AU - Seiichi MIYAZAKI
PY - 2010
DO - 10.1587/transele.E93.C.569
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E93-C
IS - 5
JA - IEICE TRANSACTIONS on Electronics
Y1 - May 2010
AB - Silicon-quantum-dots (Si-QDs) with an areal density as high as 10¹² cm^{- 2} were self-assembled on thermally-grown SiO₂ by low pressure CVD using Si2H6, in which OH-terminated SiO₂ surface prior to the Si CVD was exposed to GeH₄ to create nucleation sites uniformly. After thermal oxidation of Si-QDs surface, two-dimensional electronic transport through the Si-QDs array was measured with co-planar Al electrodes evaporated on the array surface. Random telegraph signals were clearly observed at constant applied bias conditions in dark condition and under light irradiation at room temperature. The result indicates the charging and discharging of a dot adjacent to the percolation current path in the dots array.
ER -