Transient Characteristic of Fabricated Magnetic Tunnel Junction (MTJ) Programmed with CMOS Circuit

Masashi KAMIYANAGI, Fumitaka IGA, Shoji IKEDA, Katsuya MIURA, Jun HAYAKAWA, Haruhiro HASEGAWA, Takahiro HANYU, Hideo OHNO, Tetsuo ENDOH

Summary :

In this paper, it is shown that our fabricated MTJ of 60180 nm², which is connected to the MOSFET in series by 3 levels via and 3 levels metal line, can dynamically operate with the programming current driven by 0.14 µm CMOSFET. In our measurement of transient characteristic of fabricated MTJ, the pulse current, which is generated by the MOSFET with an applied pulse voltage of 1.5 V to its gate, injected to the fabricated MTJ connected to the MOSFET in series. By using the current measurement technique flowing in MTJ with sampling period of 10 nsec, for the first time, we succeeded in monitor that the transition speed of the resistance change of 60180 nm² MTJ is less than 30 ns with its programming current of 500 µA and the resistance change of 1.2 kΩ.

• Publication: IEICE TRANSACTIONS on Electronics Vol.E93-C No.5 pp.602-607
• Publication Date: 2010/05/01
• Online ISSN: 1745-1353
• DOI: 10.1587/transele.E93.C.602
• Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
• Category: Flash/Advanced Memory

Authors

Masashi KAMIYANAGI
Fumitaka IGA
Shoji IKEDA
Katsuya MIURA
Jun HAYAKAWA
Haruhiro HASEGAWA
Takahiro HANYU
Hideo OHNO
Tetsuo ENDOH

Keyword

spin-transfer torque random access memory (STT-RAM),  tunnel magnetoresistance (TMR),  spin-injection,  magnetic tunnel junction (MTJ),  CMOS