An Atomistic Study on Hydrogenation Effects toward Quality Improvement of Program/Erase Cycle of MONOS-Type Memory
Summary :
Due to the aggressive scaling of non-volatile memories, “charge-trap memories” such as MONOS-type memories become one of the most important targets. One of the merits of such MONOS-type memories is that they can trap charges inside atomic-scale defect sites in SiN layers. At the same time, however, charge traps with atomistic scale tend to induce additional large structural changes. Hydrogen has attracted a great attention as an important heteroatom in MONOS-type memories. We theoretically investigate the basic characteristics of hydrogen-defects in SiN layer in MONOS-type memories on the basis of the first-principles calculations. We find that SiN structures with a hydrogen impurity tend to reveal reversible structural change during program/erase operation.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E94-C No.5 pp.693-698
- Publication Date
- 2011/05/01
- Publicized
- Online ISSN
- 1745-1353
- DOI
- 10.1587/transele.E94.C.693
- Type of Manuscript
- Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
- Category
Authors
Keyword
Latest Issue
Copyrights notice of machine-translated contents
The copyright of the original papers published on this site belongs to IEICE. Unauthorized use of the original or translated papers is prohibited. See IEICE Provisions on Copyright for details.
Cite this
Copy
Akira OTAKE, Keita YAMAGUCHI, Katsumasa KAMIYA, Yasuteru SHIGETA, Kenji SHIRAISHI, "An Atomistic Study on Hydrogenation Effects toward Quality Improvement of Program/Erase Cycle of MONOS-Type Memory" in IEICE TRANSACTIONS on Electronics,
vol. E94-C, no. 5, pp. 693-698, May 2011, doi: 10.1587/transele.E94.C.693.
Abstract: Due to the aggressive scaling of non-volatile memories, “charge-trap memories” such as MONOS-type memories become one of the most important targets. One of the merits of such MONOS-type memories is that they can trap charges inside atomic-scale defect sites in SiN layers. At the same time, however, charge traps with atomistic scale tend to induce additional large structural changes. Hydrogen has attracted a great attention as an important heteroatom in MONOS-type memories. We theoretically investigate the basic characteristics of hydrogen-defects in SiN layer in MONOS-type memories on the basis of the first-principles calculations. We find that SiN structures with a hydrogen impurity tend to reveal reversible structural change during program/erase operation.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.E94.C.693/_p
Copy
@ARTICLE{e94-c_5_693,
author={Akira OTAKE, Keita YAMAGUCHI, Katsumasa KAMIYA, Yasuteru SHIGETA, Kenji SHIRAISHI, },
journal={IEICE TRANSACTIONS on Electronics},
title={An Atomistic Study on Hydrogenation Effects toward Quality Improvement of Program/Erase Cycle of MONOS-Type Memory},
year={2011},
volume={E94-C},
number={5},
pages={693-698},
abstract={Due to the aggressive scaling of non-volatile memories, “charge-trap memories” such as MONOS-type memories become one of the most important targets. One of the merits of such MONOS-type memories is that they can trap charges inside atomic-scale defect sites in SiN layers. At the same time, however, charge traps with atomistic scale tend to induce additional large structural changes. Hydrogen has attracted a great attention as an important heteroatom in MONOS-type memories. We theoretically investigate the basic characteristics of hydrogen-defects in SiN layer in MONOS-type memories on the basis of the first-principles calculations. We find that SiN structures with a hydrogen impurity tend to reveal reversible structural change during program/erase operation.},
keywords={},
doi={10.1587/transele.E94.C.693},
ISSN={1745-1353},
month={May},}
Copy
TY - JOUR
TI - An Atomistic Study on Hydrogenation Effects toward Quality Improvement of Program/Erase Cycle of MONOS-Type Memory
T2 - IEICE TRANSACTIONS on Electronics
SP - 693
EP - 698
AU - Akira OTAKE
AU - Keita YAMAGUCHI
AU - Katsumasa KAMIYA
AU - Yasuteru SHIGETA
AU - Kenji SHIRAISHI
PY - 2011
DO - 10.1587/transele.E94.C.693
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E94-C
IS - 5
JA - IEICE TRANSACTIONS on Electronics
Y1 - May 2011
AB - Due to the aggressive scaling of non-volatile memories, “charge-trap memories” such as MONOS-type memories become one of the most important targets. One of the merits of such MONOS-type memories is that they can trap charges inside atomic-scale defect sites in SiN layers. At the same time, however, charge traps with atomistic scale tend to induce additional large structural changes. Hydrogen has attracted a great attention as an important heteroatom in MONOS-type memories. We theoretically investigate the basic characteristics of hydrogen-defects in SiN layer in MONOS-type memories on the basis of the first-principles calculations. We find that SiN structures with a hydrogen impurity tend to reveal reversible structural change during program/erase operation.
ER -
English
