IEICE TRANSACTIONS on Electronics
Temperature Dependency of Driving Current in High-k/Metal Gate MOSFET and Its Influence on CMOS Inverter Circuit
Summary :
As the integration density and capacitance of semiconductor devices have increased, high-dielectric (High-k) materials have attracted considerable attention. We investigated the dependence of threshold voltage (Vth) characteristics of the High-k/Metal Gate MOSFET fabricated with 65 nm CMOS process on the temperature, in comparison to conventional SiON/Poly-Si Gate MOSFET. Two aspects including the Fermi level and the channel mobility in MOSFET are discussed in details. Furthermore, the influence of threshold voltage characteristics of the High-k/Metal Gate MOSFET on the logic threshold voltage (Vth-inv) of CMOS inverter is reported in this paper.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E94-C No.5 pp.751-759
- Publication Date
- 2011/05/01
- Publicized
- Online ISSN
- 1745-1353
- DOI
- 10.1587/transele.E94.C.751
- Type of Manuscript
- Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
- Category
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Takeshi SASAKI, Takuya IMAMOTO, Tetsuo ENDOH, "Temperature Dependency of Driving Current in High-k/Metal Gate MOSFET and Its Influence on CMOS Inverter Circuit" in IEICE TRANSACTIONS on Electronics,
vol. E94-C, no. 5, pp. 751-759, May 2011, doi: 10.1587/transele.E94.C.751.
Abstract: As the integration density and capacitance of semiconductor devices have increased, high-dielectric (High-k) materials have attracted considerable attention. We investigated the dependence of threshold voltage (Vth) characteristics of the High-k/Metal Gate MOSFET fabricated with 65 nm CMOS process on the temperature, in comparison to conventional SiON/Poly-Si Gate MOSFET. Two aspects including the Fermi level and the channel mobility in MOSFET are discussed in details. Furthermore, the influence of threshold voltage characteristics of the High-k/Metal Gate MOSFET on the logic threshold voltage (Vth-inv) of CMOS inverter is reported in this paper.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.E94.C.751/_p
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@ARTICLE{e94-c_5_751,
author={Takeshi SASAKI, Takuya IMAMOTO, Tetsuo ENDOH, },
journal={IEICE TRANSACTIONS on Electronics},
title={Temperature Dependency of Driving Current in High-k/Metal Gate MOSFET and Its Influence on CMOS Inverter Circuit},
year={2011},
volume={E94-C},
number={5},
pages={751-759},
abstract={As the integration density and capacitance of semiconductor devices have increased, high-dielectric (High-k) materials have attracted considerable attention. We investigated the dependence of threshold voltage (Vth) characteristics of the High-k/Metal Gate MOSFET fabricated with 65 nm CMOS process on the temperature, in comparison to conventional SiON/Poly-Si Gate MOSFET. Two aspects including the Fermi level and the channel mobility in MOSFET are discussed in details. Furthermore, the influence of threshold voltage characteristics of the High-k/Metal Gate MOSFET on the logic threshold voltage (Vth-inv) of CMOS inverter is reported in this paper.},
keywords={},
doi={10.1587/transele.E94.C.751},
ISSN={1745-1353},
month={May},}
Copy
TY - JOUR
TI - Temperature Dependency of Driving Current in High-k/Metal Gate MOSFET and Its Influence on CMOS Inverter Circuit
T2 - IEICE TRANSACTIONS on Electronics
SP - 751
EP - 759
AU - Takeshi SASAKI
AU - Takuya IMAMOTO
AU - Tetsuo ENDOH
PY - 2011
DO - 10.1587/transele.E94.C.751
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E94-C
IS - 5
JA - IEICE TRANSACTIONS on Electronics
Y1 - May 2011
AB - As the integration density and capacitance of semiconductor devices have increased, high-dielectric (High-k) materials have attracted considerable attention. We investigated the dependence of threshold voltage (Vth) characteristics of the High-k/Metal Gate MOSFET fabricated with 65 nm CMOS process on the temperature, in comparison to conventional SiON/Poly-Si Gate MOSFET. Two aspects including the Fermi level and the channel mobility in MOSFET are discussed in details. Furthermore, the influence of threshold voltage characteristics of the High-k/Metal Gate MOSFET on the logic threshold voltage (Vth-inv) of CMOS inverter is reported in this paper.
ER -
English
