Investigation of n-Type Pentacene Based MOS Diodes with Ultra-Thin Metal Interface Layer
Summary :
In order to realize stable n-type characteristics of pentacene for applying to the organic complementary metal-oxide-semiconductor field-effect transistors (CMOS), we have fabricated pentacene based MOS diodes using ultra-thin Yb layer such as 0.5-3 nm between gate insulator and pentacene. From the results of capacitance-voltage (C-V) measurements, excellent n-type C-V characteristics of the devices with 1 and 2 nm-thick Yb were observed even though the devices were measured in air. These results suggested that the n-type semiconductor characteristics of pentacene are able to be improved by the thin Yb interfacial layer. Furthermore, the improved n-type characteristics of pentacene will enable the fabrication of flexible complementary logic circuits utilizing one kind organic semiconductor.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E94-C No.5 pp.767-770
- Publication Date
- 2011/05/01
- Publicized
- Online ISSN
- 1745-1353
- DOI
- 10.1587/transele.E94.C.767
- Type of Manuscript
- Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
- Category
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Young-Uk SONG, Hiroshi ISHIWARA, Shun-ichiro OHMI, "Investigation of n-Type Pentacene Based MOS Diodes with Ultra-Thin Metal Interface Layer" in IEICE TRANSACTIONS on Electronics,
vol. E94-C, no. 5, pp. 767-770, May 2011, doi: 10.1587/transele.E94.C.767.
Abstract: In order to realize stable n-type characteristics of pentacene for applying to the organic complementary metal-oxide-semiconductor field-effect transistors (CMOS), we have fabricated pentacene based MOS diodes using ultra-thin Yb layer such as 0.5-3 nm between gate insulator and pentacene. From the results of capacitance-voltage (C-V) measurements, excellent n-type C-V characteristics of the devices with 1 and 2 nm-thick Yb were observed even though the devices were measured in air. These results suggested that the n-type semiconductor characteristics of pentacene are able to be improved by the thin Yb interfacial layer. Furthermore, the improved n-type characteristics of pentacene will enable the fabrication of flexible complementary logic circuits utilizing one kind organic semiconductor.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.E94.C.767/_p
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@ARTICLE{e94-c_5_767,
author={Young-Uk SONG, Hiroshi ISHIWARA, Shun-ichiro OHMI, },
journal={IEICE TRANSACTIONS on Electronics},
title={Investigation of n-Type Pentacene Based MOS Diodes with Ultra-Thin Metal Interface Layer},
year={2011},
volume={E94-C},
number={5},
pages={767-770},
abstract={In order to realize stable n-type characteristics of pentacene for applying to the organic complementary metal-oxide-semiconductor field-effect transistors (CMOS), we have fabricated pentacene based MOS diodes using ultra-thin Yb layer such as 0.5-3 nm between gate insulator and pentacene. From the results of capacitance-voltage (C-V) measurements, excellent n-type C-V characteristics of the devices with 1 and 2 nm-thick Yb were observed even though the devices were measured in air. These results suggested that the n-type semiconductor characteristics of pentacene are able to be improved by the thin Yb interfacial layer. Furthermore, the improved n-type characteristics of pentacene will enable the fabrication of flexible complementary logic circuits utilizing one kind organic semiconductor.},
keywords={},
doi={10.1587/transele.E94.C.767},
ISSN={1745-1353},
month={May},}
Copy
TY - JOUR
TI - Investigation of n-Type Pentacene Based MOS Diodes with Ultra-Thin Metal Interface Layer
T2 - IEICE TRANSACTIONS on Electronics
SP - 767
EP - 770
AU - Young-Uk SONG
AU - Hiroshi ISHIWARA
AU - Shun-ichiro OHMI
PY - 2011
DO - 10.1587/transele.E94.C.767
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E94-C
IS - 5
JA - IEICE TRANSACTIONS on Electronics
Y1 - May 2011
AB - In order to realize stable n-type characteristics of pentacene for applying to the organic complementary metal-oxide-semiconductor field-effect transistors (CMOS), we have fabricated pentacene based MOS diodes using ultra-thin Yb layer such as 0.5-3 nm between gate insulator and pentacene. From the results of capacitance-voltage (C-V) measurements, excellent n-type C-V characteristics of the devices with 1 and 2 nm-thick Yb were observed even though the devices were measured in air. These results suggested that the n-type semiconductor characteristics of pentacene are able to be improved by the thin Yb interfacial layer. Furthermore, the improved n-type characteristics of pentacene will enable the fabrication of flexible complementary logic circuits utilizing one kind organic semiconductor.
ER -
English
