DC and RF Performance of AlN/GaN MOS-HEMTs

Sanna TAKING; Douglas MACFARLANE; Ali Z. KHOKHAR; Amir M. DABIRAN; Edward WASIGE

doi:10.1587/transele.E94.C.835

DC and RF Performance of AlN/GaN MOS-HEMTs

Sanna TAKING, Douglas MACFARLANE, Ali Z. KHOKHAR, Amir M. DABIRAN, Edward WASIGE

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This paper reports the DC and RF characteristics of AlN/GaN MOS-HEMTs passivated with thin Al₂O₃ formed by thermal oxidation of evaporated aluminium. Extraction of the small-signal equivalent circuit is also described. Device fabrication involved wet etching of evaporated Al from the Ohmic contact regions prior to metal deposition. This approach yielded an average contact resistance of ∼0.76 Ω.mm extracted from transmission line method (TLM) characterisation. Fabricated two-finger AlN/GaN MOS-HEMTs with 0.2 µm gate length and 100 µm gate width showed good gate control of drain currents up to a gate bias of 3 V and achieved a maximum drain current, I_DSmax of ∼1460 mA/mm. The peak extrinsic transconductance, G_max, of the device was ∼303 mS/mm at V_DS = 4 V. Current-gain cut-off frequency, f_T, and maximum oscillation frequency, f_MAX, of 50 GHz and 40 GHz, respectively, were extracted from S-parameter measurements. For longer gate length, L_G = 0.5 µm, f_T and f_MAX were 20 GHz and 30 GHz, respectively. These results demonstrate the potential of AlN/GaN MOS-HEMTs for high power and high frequency applications.

Publication: IEICE TRANSACTIONS on Electronics Vol.E94-C No.5 pp.835-841

Publication Date: 2011/05/01

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Online ISSN: 1745-1353

DOI: 10.1587/transele.E94.C.835

Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)

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Sanna TAKING, Douglas MACFARLANE, Ali Z. KHOKHAR, Amir M. DABIRAN, Edward WASIGE, "DC and RF Performance of AlN/GaN MOS-HEMTs" in IEICE TRANSACTIONS on Electronics, vol. E94-C, no. 5, pp. 835-841, May 2011, doi: 10.1587/transele.E94.C.835.
Abstract: This paper reports the DC and RF characteristics of AlN/GaN MOS-HEMTs passivated with thin Al₂O₃ formed by thermal oxidation of evaporated aluminium. Extraction of the small-signal equivalent circuit is also described. Device fabrication involved wet etching of evaporated Al from the Ohmic contact regions prior to metal deposition. This approach yielded an average contact resistance of ∼0.76 Ω.mm extracted from transmission line method (TLM) characterisation. Fabricated two-finger AlN/GaN MOS-HEMTs with 0.2 µm gate length and 100 µm gate width showed good gate control of drain currents up to a gate bias of 3 V and achieved a maximum drain current, I_DSmax of ∼1460 mA/mm. The peak extrinsic transconductance, G_max, of the device was ∼303 mS/mm at V_DS = 4 V. Current-gain cut-off frequency, f_T, and maximum oscillation frequency, f_MAX, of 50 GHz and 40 GHz, respectively, were extracted from S-parameter measurements. For longer gate length, L_G = 0.5 µm, f_T and f_MAX were 20 GHz and 30 GHz, respectively. These results demonstrate the potential of AlN/GaN MOS-HEMTs for high power and high frequency applications.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.E94.C.835/_p

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@ARTICLE{e94-c_5_835,
author={Sanna TAKING, Douglas MACFARLANE, Ali Z. KHOKHAR, Amir M. DABIRAN, Edward WASIGE, },
journal={IEICE TRANSACTIONS on Electronics},
title={DC and RF Performance of AlN/GaN MOS-HEMTs},
year={2011},
volume={E94-C},
number={5},
pages={835-841},
abstract={This paper reports the DC and RF characteristics of AlN/GaN MOS-HEMTs passivated with thin Al₂O₃ formed by thermal oxidation of evaporated aluminium. Extraction of the small-signal equivalent circuit is also described. Device fabrication involved wet etching of evaporated Al from the Ohmic contact regions prior to metal deposition. This approach yielded an average contact resistance of ∼0.76 Ω.mm extracted from transmission line method (TLM) characterisation. Fabricated two-finger AlN/GaN MOS-HEMTs with 0.2 µm gate length and 100 µm gate width showed good gate control of drain currents up to a gate bias of 3 V and achieved a maximum drain current, I_DSmax of ∼1460 mA/mm. The peak extrinsic transconductance, G_max, of the device was ∼303 mS/mm at V_DS = 4 V. Current-gain cut-off frequency, f_T, and maximum oscillation frequency, f_MAX, of 50 GHz and 40 GHz, respectively, were extracted from S-parameter measurements. For longer gate length, L_G = 0.5 µm, f_T and f_MAX were 20 GHz and 30 GHz, respectively. These results demonstrate the potential of AlN/GaN MOS-HEMTs for high power and high frequency applications.},
keywords={},
doi={10.1587/transele.E94.C.835},
ISSN={1745-1353},
month={May},}

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TY - JOUR
TI - DC and RF Performance of AlN/GaN MOS-HEMTs
T2 - IEICE TRANSACTIONS on Electronics
SP - 835
EP - 841
AU - Sanna TAKING
AU - Douglas MACFARLANE
AU - Ali Z. KHOKHAR
AU - Amir M. DABIRAN
AU - Edward WASIGE
PY - 2011
DO - 10.1587/transele.E94.C.835
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E94-C
IS - 5
JA - IEICE TRANSACTIONS on Electronics
Y1 - May 2011
AB - This paper reports the DC and RF characteristics of AlN/GaN MOS-HEMTs passivated with thin Al₂O₃ formed by thermal oxidation of evaporated aluminium. Extraction of the small-signal equivalent circuit is also described. Device fabrication involved wet etching of evaporated Al from the Ohmic contact regions prior to metal deposition. This approach yielded an average contact resistance of ∼0.76 Ω.mm extracted from transmission line method (TLM) characterisation. Fabricated two-finger AlN/GaN MOS-HEMTs with 0.2 µm gate length and 100 µm gate width showed good gate control of drain currents up to a gate bias of 3 V and achieved a maximum drain current, I_DSmax of ∼1460 mA/mm. The peak extrinsic transconductance, G_max, of the device was ∼303 mS/mm at V_DS = 4 V. Current-gain cut-off frequency, f_T, and maximum oscillation frequency, f_MAX, of 50 GHz and 40 GHz, respectively, were extracted from S-parameter measurements. For longer gate length, L_G = 0.5 µm, f_T and f_MAX were 20 GHz and 30 GHz, respectively. These results demonstrate the potential of AlN/GaN MOS-HEMTs for high power and high frequency applications.
ER -