We performed the (NH4)2S surface treatments before Al2O3 deposition to improve the Al2O3/III-Nitride interface quality in Al2O3/AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors (MOSHFETs). Interface state density at the Al2O3/GaN interface was decreased by the (NH4)2S treatment. The hysteresis width in ID-VGS and gm-VGS characteristics of the Al2O3/AlGaN MOSHFETs with the (NH4)2S treatment was smaller than that without the (NH4)2S treatment. In addition, transconductance (gm) decrease at a large gate voltage was relaxed by the (NH4)2S treatment. We also performed ultraviolet (UV) illumination during the (NH4)2S treatment for further improvement of the Al2O3/III-Nitride interface quality. Interface state density of the Al2O3/GaN MOS diodes with the UV illumination was smaller than that without the UV illumination.

This paper reports the DC and RF characteristics of AlN/GaN MOS-HEMTs passivated with thin Al2O3 formed by thermal oxidation of evaporated aluminium. Extraction of the small-signal equivalent circuit is also described. Device fabrication involved wet etching of evaporated Al from the Ohmic contact regions prior to metal deposition. This approach yielded an average contact resistance of ∼0.76 Ω.mm extracted from transmission line method (TLM) characterisation. Fabricated two-finger AlN/GaN MOS-HEMTs with 0.2 µm gate length and 100 µm gate width showed good gate control of drain currents up to a gate bias of 3 V and achieved a maximum drain current, IDSmax of ∼1460 mA/mm. The peak extrinsic transconductance, Gmax, of the device was ∼303 mS/mm at VDS = 4 V. Current-gain cut-off frequency, fT, and maximum oscillation frequency, fMAX, of 50 GHz and 40 GHz, respectively, were extracted from S-parameter measurements. For longer gate length, LG = 0.5 µm, fT and fMAX were 20 GHz and 30 GHz, respectively. These results demonstrate the potential of AlN/GaN MOS-HEMTs for high power and high frequency applications.

We developed material and process technologies concerned to DDF, which is formed on MgO surface around the inter-pixel gap to prevent vertical crosstalk discharge in stripe rib structure. First we tried with thin film deposition and lift-off patterning to find Al2O3 and TiO2 are both available for DDF material. Next we tried with thick film printing in favor of mass productivity for large size PDPs. In case DDF included PbO glass, we met serious hardship in generating discharge. The problem was perfectly solved by having thick film DDF composed of 100 nm sized Al2O3 grains without glass component. Its γi was about 1/5 that of MgO, suggesting that the thick film DDF is almost compatible with thin film Al2O3 in electron emission characteristics. Such very small grain size contributes to DDF transparency, which is excellently high. In addition to it, such DDF is equipped with cushioning effect to prevent dot defects caused by rib breakage. Furthermore the DDF functions as getter during panel exhaustion to bring deep blue color by promoting deoxidization of blue phosphor provided that its volume is small enough. Transparent DDF may be rather better than black one with respect to bright room contrast ratio, not to mention to avoiding terrible sparking discharge. Thus material and process technologies for DDF have been almost fixed in success.

This paper describes a nondestructive measurement method for complex permittivity of dielectric material at pseudo microwave frequencies. The resonator used in this study has a cylindrical cavity filled with a sapphire material of a well known complex permittivity. The resonator is divided into two parts at the center. A dielectric substrate specimen is clamped with these halves. Relative permittivity εand loss tangent tan δ of the specimen are obtained at 3 GHz using the TE011 resonance mode. The accuracy of the present method is evaluated through the comparison of the measured values by the new method with those at around 10 GHz by the conventional empty cavity resonator method. The errors of measurements are smaller than 1% and 1105 for εand tan δ, respectively.