Open Access
Impact of Discrete-Charge-Induced Variability on Scaled MOS Devices
-
Full Text Views
80
- Cite this
- Free PDF (924.3KB)
Summary :
As MOS transistors are scaled down, the impact of randomly placed discrete charge (impurity atoms, traps and surface states) on device characteristics rapidly increases. Significant variability caused by random dopant fluctuation (RDF) is a direct result of this, which urges the adoption of new device architectures (ultra-thin body SOI FETs and FinFETs) which do not use impurity for body doping. Variability caused by traps and surface states, such as random telegraph noise (RTN), though less significant than RDF today, will soon be a major problem. The increased complexity of such residual-charge-induced variability due to non-Gaussian and time-dependent behavior will necessitate new approaches for variation-aware design.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E95-C No.4 pp.414-420
- Publication Date
- 2012/04/01
- Publicized
- Online ISSN
- 1745-1353
- DOI
- 10.1587/transele.E95.C.414
- Type of Manuscript
- Special Section INVITED PAPER (Special Section on Solid-State Circuit Design – Architecture, Circuit, Device and Design Methodology)
- Category
Authors
Keyword
Latest Issue
Copyrights notice of machine-translated contents
The copyright of the original papers published on this site belongs to IEICE. Unauthorized use of the original or translated papers is prohibited. See IEICE Provisions on Copyright for details.
Cite this
Copy
Kiyoshi TAKEUCHI, "Impact of Discrete-Charge-Induced Variability on Scaled MOS Devices" in IEICE TRANSACTIONS on Electronics,
vol. E95-C, no. 4, pp. 414-420, April 2012, doi: 10.1587/transele.E95.C.414.
Abstract: As MOS transistors are scaled down, the impact of randomly placed discrete charge (impurity atoms, traps and surface states) on device characteristics rapidly increases. Significant variability caused by random dopant fluctuation (RDF) is a direct result of this, which urges the adoption of new device architectures (ultra-thin body SOI FETs and FinFETs) which do not use impurity for body doping. Variability caused by traps and surface states, such as random telegraph noise (RTN), though less significant than RDF today, will soon be a major problem. The increased complexity of such residual-charge-induced variability due to non-Gaussian and time-dependent behavior will necessitate new approaches for variation-aware design.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.E95.C.414/_p
Copy
@ARTICLE{e95-c_4_414,
author={Kiyoshi TAKEUCHI, },
journal={IEICE TRANSACTIONS on Electronics},
title={Impact of Discrete-Charge-Induced Variability on Scaled MOS Devices},
year={2012},
volume={E95-C},
number={4},
pages={414-420},
abstract={As MOS transistors are scaled down, the impact of randomly placed discrete charge (impurity atoms, traps and surface states) on device characteristics rapidly increases. Significant variability caused by random dopant fluctuation (RDF) is a direct result of this, which urges the adoption of new device architectures (ultra-thin body SOI FETs and FinFETs) which do not use impurity for body doping. Variability caused by traps and surface states, such as random telegraph noise (RTN), though less significant than RDF today, will soon be a major problem. The increased complexity of such residual-charge-induced variability due to non-Gaussian and time-dependent behavior will necessitate new approaches for variation-aware design.},
keywords={},
doi={10.1587/transele.E95.C.414},
ISSN={1745-1353},
month={April},}
Copy
TY - JOUR
TI - Impact of Discrete-Charge-Induced Variability on Scaled MOS Devices
T2 - IEICE TRANSACTIONS on Electronics
SP - 414
EP - 420
AU - Kiyoshi TAKEUCHI
PY - 2012
DO - 10.1587/transele.E95.C.414
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E95-C
IS - 4
JA - IEICE TRANSACTIONS on Electronics
Y1 - April 2012
AB - As MOS transistors are scaled down, the impact of randomly placed discrete charge (impurity atoms, traps and surface states) on device characteristics rapidly increases. Significant variability caused by random dopant fluctuation (RDF) is a direct result of this, which urges the adoption of new device architectures (ultra-thin body SOI FETs and FinFETs) which do not use impurity for body doping. Variability caused by traps and surface states, such as random telegraph noise (RTN), though less significant than RDF today, will soon be a major problem. The increased complexity of such residual-charge-induced variability due to non-Gaussian and time-dependent behavior will necessitate new approaches for variation-aware design.
ER -
English
