IEICE TRANSACTIONS on Electronics
Evaluation of Performance in Vertical 1T-DRAM and Planar 1T-DRAM
Summary :
The performances of the conventional planar type 1T DRAM and the Vertical type 1T DRAM are compared based on structure difference using a fully-consistent device simulator. We discuss the structural advantage of the Vertical type 1T-DRAM in comparison with the conventional planar type 1T-DRAM, and evaluate their performance in each operating mode such as write, erase, read, and hold; and discuss its cell performances such as Cell Current Margin and data retention. These results provide a useful guideline designing the high performance Vertical type 1T-DRAM cell.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E95-C No.5 pp.847-853
- Publication Date
- 2012/05/01
- Publicized
- Online ISSN
- 1745-1353
- DOI
- 10.1587/transele.E95.C.847
- Type of Manuscript
- Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
- Category
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Yuto NORIFUSA, Tetsuo ENDOH, "Evaluation of Performance in Vertical 1T-DRAM and Planar 1T-DRAM" in IEICE TRANSACTIONS on Electronics,
vol. E95-C, no. 5, pp. 847-853, May 2012, doi: 10.1587/transele.E95.C.847.
Abstract: The performances of the conventional planar type 1T DRAM and the Vertical type 1T DRAM are compared based on structure difference using a fully-consistent device simulator. We discuss the structural advantage of the Vertical type 1T-DRAM in comparison with the conventional planar type 1T-DRAM, and evaluate their performance in each operating mode such as write, erase, read, and hold; and discuss its cell performances such as Cell Current Margin and data retention. These results provide a useful guideline designing the high performance Vertical type 1T-DRAM cell.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.E95.C.847/_p
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@ARTICLE{e95-c_5_847,
author={Yuto NORIFUSA, Tetsuo ENDOH, },
journal={IEICE TRANSACTIONS on Electronics},
title={Evaluation of Performance in Vertical 1T-DRAM and Planar 1T-DRAM},
year={2012},
volume={E95-C},
number={5},
pages={847-853},
abstract={The performances of the conventional planar type 1T DRAM and the Vertical type 1T DRAM are compared based on structure difference using a fully-consistent device simulator. We discuss the structural advantage of the Vertical type 1T-DRAM in comparison with the conventional planar type 1T-DRAM, and evaluate their performance in each operating mode such as write, erase, read, and hold; and discuss its cell performances such as Cell Current Margin and data retention. These results provide a useful guideline designing the high performance Vertical type 1T-DRAM cell.},
keywords={},
doi={10.1587/transele.E95.C.847},
ISSN={1745-1353},
month={May},}
Copy
TY - JOUR
TI - Evaluation of Performance in Vertical 1T-DRAM and Planar 1T-DRAM
T2 - IEICE TRANSACTIONS on Electronics
SP - 847
EP - 853
AU - Yuto NORIFUSA
AU - Tetsuo ENDOH
PY - 2012
DO - 10.1587/transele.E95.C.847
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E95-C
IS - 5
JA - IEICE TRANSACTIONS on Electronics
Y1 - May 2012
AB - The performances of the conventional planar type 1T DRAM and the Vertical type 1T DRAM are compared based on structure difference using a fully-consistent device simulator. We discuss the structural advantage of the Vertical type 1T-DRAM in comparison with the conventional planar type 1T-DRAM, and evaluate their performance in each operating mode such as write, erase, read, and hold; and discuss its cell performances such as Cell Current Margin and data retention. These results provide a useful guideline designing the high performance Vertical type 1T-DRAM cell.
ER -
English
