Evaluation of Performance in Vertical 1T-DRAM and Planar 1T-DRAM
Summary :
The performances of the conventional planar type 1T DRAM and the Vertical type 1T DRAM are compared based on structure difference using a fully-consistent device simulator. We discuss the structural advantage of the Vertical type 1T-DRAM in comparison with the conventional planar type 1T-DRAM, and evaluate their performance in each operating mode such as write, erase, read, and hold; and discuss its cell performances such as Cell Current Margin and data retention. These results provide a useful guideline designing the high performance Vertical type 1T-DRAM cell.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E95-C No.5 pp.847-853
- Publication Date
- 2012/05/01
- Publicized
- Online ISSN
- 1745-1353
- DOI
- 10.1587/transele.E95.C.847
- Type of Manuscript
- Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
- Category
Authors
Keyword
Latest Issue
Copyrights notice of machine-translated contents
The copyright of the original papers published on this site belongs to IEICE. Unauthorized use of the original or translated papers is prohibited. See IEICE Provisions on Copyright for details.
Cite this
Copy
Yuto NORIFUSA, Tetsuo ENDOH, "Evaluation of Performance in Vertical 1T-DRAM and Planar 1T-DRAM" in IEICE TRANSACTIONS on Electronics,
vol. E95-C, no. 5, pp. 847-853, May 2012, doi: 10.1587/transele.E95.C.847.
Abstract: The performances of the conventional planar type 1T DRAM and the Vertical type 1T DRAM are compared based on structure difference using a fully-consistent device simulator. We discuss the structural advantage of the Vertical type 1T-DRAM in comparison with the conventional planar type 1T-DRAM, and evaluate their performance in each operating mode such as write, erase, read, and hold; and discuss its cell performances such as Cell Current Margin and data retention. These results provide a useful guideline designing the high performance Vertical type 1T-DRAM cell.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.E95.C.847/_p
Copy
@ARTICLE{e95-c_5_847,
author={Yuto NORIFUSA, Tetsuo ENDOH, },
journal={IEICE TRANSACTIONS on Electronics},
title={Evaluation of Performance in Vertical 1T-DRAM and Planar 1T-DRAM},
year={2012},
volume={E95-C},
number={5},
pages={847-853},
abstract={The performances of the conventional planar type 1T DRAM and the Vertical type 1T DRAM are compared based on structure difference using a fully-consistent device simulator. We discuss the structural advantage of the Vertical type 1T-DRAM in comparison with the conventional planar type 1T-DRAM, and evaluate their performance in each operating mode such as write, erase, read, and hold; and discuss its cell performances such as Cell Current Margin and data retention. These results provide a useful guideline designing the high performance Vertical type 1T-DRAM cell.},
keywords={},
doi={10.1587/transele.E95.C.847},
ISSN={1745-1353},
month={May},}
Copy
TY - JOUR
TI - Evaluation of Performance in Vertical 1T-DRAM and Planar 1T-DRAM
T2 - IEICE TRANSACTIONS on Electronics
SP - 847
EP - 853
AU - Yuto NORIFUSA
AU - Tetsuo ENDOH
PY - 2012
DO - 10.1587/transele.E95.C.847
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E95-C
IS - 5
JA - IEICE TRANSACTIONS on Electronics
Y1 - May 2012
AB - The performances of the conventional planar type 1T DRAM and the Vertical type 1T DRAM are compared based on structure difference using a fully-consistent device simulator. We discuss the structural advantage of the Vertical type 1T-DRAM in comparison with the conventional planar type 1T-DRAM, and evaluate their performance in each operating mode such as write, erase, read, and hold; and discuss its cell performances such as Cell Current Margin and data retention. These results provide a useful guideline designing the high performance Vertical type 1T-DRAM cell.
ER -
English
