IEICE TRANSACTIONS on Electronics
VCCS Models of DPLEDMOS for PDP Data Driver IC
Summary :
Two voltage controlled current source (VCCS) models of double-channel p-type lateral extended drain MOS (DPLEDMOS) are firstly proposed to analyze the energy recovery circuit (ERC) efficiency of PDP data driver IC. In terms of the mathematical function between ID and VDS, the VCCS models are created. The presented models can be embedded in system software Saber to simulate the ERC waveform of data driver IC. A test board and a PDP system are used to verify the accuracy of the VCCS models. The experimental measurements agree with the simulation results very well and the maximum model error is 3.89%. Simulation results also show that the ERC efficiency of PDP data driver IC is influenced by three factors: the value of charge time TERC, the drain current ID, and the capacitance of CL. In an actual PDP system, TERC is restricted and CL is changeless. The ERC efficiency of PDP data driver IC can be improved significantly by using DPLEDMOS which has higher ID capacity. The proposed VCCS models of DPLEDMOS can be used to predict the ERC efficiency accurately.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E96-C No.8 pp.1061-1067
- Publication Date
- 2013/08/01
- Publicized
- Online ISSN
- 1745-1353
- DOI
- 10.1587/transele.E96.C.1061
- Type of Manuscript
- PAPER
- Category
- Semiconductor Materials and Devices
Authors
Guohuan HUA
Southeast University
Hualong ZHUANG
Southeast University
Shen XU
Southeast University
Weifeng SUN
Southeast University
Zhiqun LI
Southeast University
Keyword
Latest Issue
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Guohuan HUA, Hualong ZHUANG, Shen XU, Weifeng SUN, Zhiqun LI, "VCCS Models of DPLEDMOS for PDP Data Driver IC" in IEICE TRANSACTIONS on Electronics,
vol. E96-C, no. 8, pp. 1061-1067, August 2013, doi: 10.1587/transele.E96.C.1061.
Abstract: Two voltage controlled current source (VCCS) models of double-channel p-type lateral extended drain MOS (DPLEDMOS) are firstly proposed to analyze the energy recovery circuit (ERC) efficiency of PDP data driver IC. In terms of the mathematical function between ID and VDS, the VCCS models are created. The presented models can be embedded in system software Saber to simulate the ERC waveform of data driver IC. A test board and a PDP system are used to verify the accuracy of the VCCS models. The experimental measurements agree with the simulation results very well and the maximum model error is 3.89%. Simulation results also show that the ERC efficiency of PDP data driver IC is influenced by three factors: the value of charge time TERC, the drain current ID, and the capacitance of CL. In an actual PDP system, TERC is restricted and CL is changeless. The ERC efficiency of PDP data driver IC can be improved significantly by using DPLEDMOS which has higher ID capacity. The proposed VCCS models of DPLEDMOS can be used to predict the ERC efficiency accurately.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.E96.C.1061/_p
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@ARTICLE{e96-c_8_1061,
author={Guohuan HUA, Hualong ZHUANG, Shen XU, Weifeng SUN, Zhiqun LI, },
journal={IEICE TRANSACTIONS on Electronics},
title={VCCS Models of DPLEDMOS for PDP Data Driver IC},
year={2013},
volume={E96-C},
number={8},
pages={1061-1067},
abstract={Two voltage controlled current source (VCCS) models of double-channel p-type lateral extended drain MOS (DPLEDMOS) are firstly proposed to analyze the energy recovery circuit (ERC) efficiency of PDP data driver IC. In terms of the mathematical function between ID and VDS, the VCCS models are created. The presented models can be embedded in system software Saber to simulate the ERC waveform of data driver IC. A test board and a PDP system are used to verify the accuracy of the VCCS models. The experimental measurements agree with the simulation results very well and the maximum model error is 3.89%. Simulation results also show that the ERC efficiency of PDP data driver IC is influenced by three factors: the value of charge time TERC, the drain current ID, and the capacitance of CL. In an actual PDP system, TERC is restricted and CL is changeless. The ERC efficiency of PDP data driver IC can be improved significantly by using DPLEDMOS which has higher ID capacity. The proposed VCCS models of DPLEDMOS can be used to predict the ERC efficiency accurately.},
keywords={},
doi={10.1587/transele.E96.C.1061},
ISSN={1745-1353},
month={August},}
Copy
TY - JOUR
TI - VCCS Models of DPLEDMOS for PDP Data Driver IC
T2 - IEICE TRANSACTIONS on Electronics
SP - 1061
EP - 1067
AU - Guohuan HUA
AU - Hualong ZHUANG
AU - Shen XU
AU - Weifeng SUN
AU - Zhiqun LI
PY - 2013
DO - 10.1587/transele.E96.C.1061
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E96-C
IS - 8
JA - IEICE TRANSACTIONS on Electronics
Y1 - August 2013
AB - Two voltage controlled current source (VCCS) models of double-channel p-type lateral extended drain MOS (DPLEDMOS) are firstly proposed to analyze the energy recovery circuit (ERC) efficiency of PDP data driver IC. In terms of the mathematical function between ID and VDS, the VCCS models are created. The presented models can be embedded in system software Saber to simulate the ERC waveform of data driver IC. A test board and a PDP system are used to verify the accuracy of the VCCS models. The experimental measurements agree with the simulation results very well and the maximum model error is 3.89%. Simulation results also show that the ERC efficiency of PDP data driver IC is influenced by three factors: the value of charge time TERC, the drain current ID, and the capacitance of CL. In an actual PDP system, TERC is restricted and CL is changeless. The ERC efficiency of PDP data driver IC can be improved significantly by using DPLEDMOS which has higher ID capacity. The proposed VCCS models of DPLEDMOS can be used to predict the ERC efficiency accurately.
ER -
English
