Through-Silicon-Via Characterization and Modeling Using a Novel One-Port De-Embedding Technique
Summary :
In this paper, a novel and simple one-port de-embedding technique has been applied to through-silicon-via (TSV) characterization and modeling. This method utilized pad, via, and line structures to extract the equivalent circuit model of TSV. The main advantage of this de-embedding method is that it can reduce the chip area to fabricate test element groups (TEGs) for measurements while keeping S-parameter measurement accuracies. We also analyzed the electrical characteristics of substrate coupling and TSV equivalent impedance. Our results shows good agreements between measurement data and the equivalent circuit model up to 20GHz.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E96-C No.10 pp.1289-1293
- Publication Date
- 2013/10/01
- Publicized
- Online ISSN
- 1745-1353
- DOI
- 10.1587/transele.E96.C.1289
- Type of Manuscript
- Special Section PAPER (Special Section on Emerging Technologies and Applications for Microwave and Millimeter-Wave Systems)
- Category
Authors
An-Sam PENG
National Chiao-Tung University
Ming-Hsiang CHO
National Chiao-Tung University
Yueh-Hua WANG
National Chiao-Tung University
Meng-Fang WANG
United Microelectronics Corporation
David CHEN
United Microelectronics Corporation
Lin-Kun WU
National Chiao-Tung University
Keyword
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An-Sam PENG, Ming-Hsiang CHO, Yueh-Hua WANG, Meng-Fang WANG, David CHEN, Lin-Kun WU, "Through-Silicon-Via Characterization and Modeling Using a Novel One-Port De-Embedding Technique" in IEICE TRANSACTIONS on Electronics,
vol. E96-C, no. 10, pp. 1289-1293, October 2013, doi: 10.1587/transele.E96.C.1289.
Abstract: In this paper, a novel and simple one-port de-embedding technique has been applied to through-silicon-via (TSV) characterization and modeling. This method utilized pad, via, and line structures to extract the equivalent circuit model of TSV. The main advantage of this de-embedding method is that it can reduce the chip area to fabricate test element groups (TEGs) for measurements while keeping S-parameter measurement accuracies. We also analyzed the electrical characteristics of substrate coupling and TSV equivalent impedance. Our results shows good agreements between measurement data and the equivalent circuit model up to 20GHz.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.E96.C.1289/_p
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@ARTICLE{e96-c_10_1289,
author={An-Sam PENG, Ming-Hsiang CHO, Yueh-Hua WANG, Meng-Fang WANG, David CHEN, Lin-Kun WU, },
journal={IEICE TRANSACTIONS on Electronics},
title={Through-Silicon-Via Characterization and Modeling Using a Novel One-Port De-Embedding Technique},
year={2013},
volume={E96-C},
number={10},
pages={1289-1293},
abstract={In this paper, a novel and simple one-port de-embedding technique has been applied to through-silicon-via (TSV) characterization and modeling. This method utilized pad, via, and line structures to extract the equivalent circuit model of TSV. The main advantage of this de-embedding method is that it can reduce the chip area to fabricate test element groups (TEGs) for measurements while keeping S-parameter measurement accuracies. We also analyzed the electrical characteristics of substrate coupling and TSV equivalent impedance. Our results shows good agreements between measurement data and the equivalent circuit model up to 20GHz.},
keywords={},
doi={10.1587/transele.E96.C.1289},
ISSN={1745-1353},
month={October},}
Copy
TY - JOUR
TI - Through-Silicon-Via Characterization and Modeling Using a Novel One-Port De-Embedding Technique
T2 - IEICE TRANSACTIONS on Electronics
SP - 1289
EP - 1293
AU - An-Sam PENG
AU - Ming-Hsiang CHO
AU - Yueh-Hua WANG
AU - Meng-Fang WANG
AU - David CHEN
AU - Lin-Kun WU
PY - 2013
DO - 10.1587/transele.E96.C.1289
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E96-C
IS - 10
JA - IEICE TRANSACTIONS on Electronics
Y1 - October 2013
AB - In this paper, a novel and simple one-port de-embedding technique has been applied to through-silicon-via (TSV) characterization and modeling. This method utilized pad, via, and line structures to extract the equivalent circuit model of TSV. The main advantage of this de-embedding method is that it can reduce the chip area to fabricate test element groups (TEGs) for measurements while keeping S-parameter measurement accuracies. We also analyzed the electrical characteristics of substrate coupling and TSV equivalent impedance. Our results shows good agreements between measurement data and the equivalent circuit model up to 20GHz.
ER -
English
