IEICE TRANSACTIONS on Electronics
A Radiation-Hard Redundant Flip-Flop to Suppress Multiple Cell Upset by Utilizing the Parasitic Bipolar Effect
Summary :
According to the process scaling, radiation-hard devices are becoming sensitive to soft errors caused by Multiple Cell Upset (MCUs). In this paper, the parasitic bipolar effects are utilized to suppress MCUs of the radiation-hard dual-modular flip-flops. Device simulations reveal that a simultaneous flip of redundant latches is suppressed by storing opposite values instead of storing the same value due to its asymmetrical structure. The state of latches becomes a specific value after a particle hit due to the bipolar effects. Spallation neutron irradiation proves that MCUs are effectively suppressed in the D-FF arrays in which adjacent two latches in different FFs store opposite values. The redundant latch structure storing the opposite values is robust to the simultaneous flip.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E96-C No.4 pp.511-517
- Publication Date
- 2013/04/01
- Publicized
- Online ISSN
- 1745-1353
- DOI
- 10.1587/transele.E96.C.511
- Type of Manuscript
- Special Section PAPER (Special Section on Solid-State Circuit Design—Architecture, Circuit, Device and Design Methodology)
- Category
Authors
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Kuiyuan ZHANG, Jun FURUTA, Ryosuke YAMAMOTO, Kazutoshi KOBAYASHI, Hidetoshi ONODERA, "A Radiation-Hard Redundant Flip-Flop to Suppress Multiple Cell Upset by Utilizing the Parasitic Bipolar Effect" in IEICE TRANSACTIONS on Electronics,
vol. E96-C, no. 4, pp. 511-517, April 2013, doi: 10.1587/transele.E96.C.511.
Abstract: According to the process scaling, radiation-hard devices are becoming sensitive to soft errors caused by Multiple Cell Upset (MCUs). In this paper, the parasitic bipolar effects are utilized to suppress MCUs of the radiation-hard dual-modular flip-flops. Device simulations reveal that a simultaneous flip of redundant latches is suppressed by storing opposite values instead of storing the same value due to its asymmetrical structure. The state of latches becomes a specific value after a particle hit due to the bipolar effects. Spallation neutron irradiation proves that MCUs are effectively suppressed in the D-FF arrays in which adjacent two latches in different FFs store opposite values. The redundant latch structure storing the opposite values is robust to the simultaneous flip.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.E96.C.511/_p
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@ARTICLE{e96-c_4_511,
author={Kuiyuan ZHANG, Jun FURUTA, Ryosuke YAMAMOTO, Kazutoshi KOBAYASHI, Hidetoshi ONODERA, },
journal={IEICE TRANSACTIONS on Electronics},
title={A Radiation-Hard Redundant Flip-Flop to Suppress Multiple Cell Upset by Utilizing the Parasitic Bipolar Effect},
year={2013},
volume={E96-C},
number={4},
pages={511-517},
abstract={According to the process scaling, radiation-hard devices are becoming sensitive to soft errors caused by Multiple Cell Upset (MCUs). In this paper, the parasitic bipolar effects are utilized to suppress MCUs of the radiation-hard dual-modular flip-flops. Device simulations reveal that a simultaneous flip of redundant latches is suppressed by storing opposite values instead of storing the same value due to its asymmetrical structure. The state of latches becomes a specific value after a particle hit due to the bipolar effects. Spallation neutron irradiation proves that MCUs are effectively suppressed in the D-FF arrays in which adjacent two latches in different FFs store opposite values. The redundant latch structure storing the opposite values is robust to the simultaneous flip.},
keywords={},
doi={10.1587/transele.E96.C.511},
ISSN={1745-1353},
month={April},}
Copy
TY - JOUR
TI - A Radiation-Hard Redundant Flip-Flop to Suppress Multiple Cell Upset by Utilizing the Parasitic Bipolar Effect
T2 - IEICE TRANSACTIONS on Electronics
SP - 511
EP - 517
AU - Kuiyuan ZHANG
AU - Jun FURUTA
AU - Ryosuke YAMAMOTO
AU - Kazutoshi KOBAYASHI
AU - Hidetoshi ONODERA
PY - 2013
DO - 10.1587/transele.E96.C.511
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E96-C
IS - 4
JA - IEICE TRANSACTIONS on Electronics
Y1 - April 2013
AB - According to the process scaling, radiation-hard devices are becoming sensitive to soft errors caused by Multiple Cell Upset (MCUs). In this paper, the parasitic bipolar effects are utilized to suppress MCUs of the radiation-hard dual-modular flip-flops. Device simulations reveal that a simultaneous flip of redundant latches is suppressed by storing opposite values instead of storing the same value due to its asymmetrical structure. The state of latches becomes a specific value after a particle hit due to the bipolar effects. Spallation neutron irradiation proves that MCUs are effectively suppressed in the D-FF arrays in which adjacent two latches in different FFs store opposite values. The redundant latch structure storing the opposite values is robust to the simultaneous flip.
ER -
English
