Development of Test Structure for Variability Evaluation using Charge-Based Capacitance Measurement
Summary :
A test structure for charge-based capacitance measurement (CBCM) method has been developed to evaluate the threshold voltage variability from capacitance-voltage (C-V) curves of actual size metal-oxide-semiconductor field-effect-transistors (MOSFETs). The C-V curves from accumulation to inversion are measured for the MOSFETs having various channel dimensions using this test structure. Intrinsic capacitance components between the MOSFET electrodes are extracted from those C-V curves which are considered to include parasitic capacitance component. The intrinsic C-V curves are used for attempting to extract threshold voltage variations of their MOSFETs. It is found that the developed test structure is very useful for the evaluation of MOSFETs variability, because the derivation in MOSFET C-V curves is not influenced by current measurement noise.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E97-C No.11 pp.1117-1123
- Publication Date
- 2014/11/01
- Publicized
- Online ISSN
- 1745-1353
- DOI
- 10.1587/transele.E97.C.1117
- Type of Manuscript
- PAPER
- Category
- Semiconductor Materials and Devices
Authors
Katsuhiro TSUJI
Hiroshima City University
Kazuo TERADA
Hiroshima City University
Ryota KIKUCHI
Hiroshima City University
Keyword
Latest Issue
Copyrights notice of machine-translated contents
The copyright of the original papers published on this site belongs to IEICE. Unauthorized use of the original or translated papers is prohibited. See IEICE Provisions on Copyright for details.
Cite this
Copy
Katsuhiro TSUJI, Kazuo TERADA, Ryota KIKUCHI, "Development of Test Structure for Variability Evaluation using Charge-Based Capacitance Measurement" in IEICE TRANSACTIONS on Electronics,
vol. E97-C, no. 11, pp. 1117-1123, November 2014, doi: 10.1587/transele.E97.C.1117.
Abstract: A test structure for charge-based capacitance measurement (CBCM) method has been developed to evaluate the threshold voltage variability from capacitance-voltage (C-V) curves of actual size metal-oxide-semiconductor field-effect-transistors (MOSFETs). The C-V curves from accumulation to inversion are measured for the MOSFETs having various channel dimensions using this test structure. Intrinsic capacitance components between the MOSFET electrodes are extracted from those C-V curves which are considered to include parasitic capacitance component. The intrinsic C-V curves are used for attempting to extract threshold voltage variations of their MOSFETs. It is found that the developed test structure is very useful for the evaluation of MOSFETs variability, because the derivation in MOSFET C-V curves is not influenced by current measurement noise.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.E97.C.1117/_p
Copy
@ARTICLE{e97-c_11_1117,
author={Katsuhiro TSUJI, Kazuo TERADA, Ryota KIKUCHI, },
journal={IEICE TRANSACTIONS on Electronics},
title={Development of Test Structure for Variability Evaluation using Charge-Based Capacitance Measurement},
year={2014},
volume={E97-C},
number={11},
pages={1117-1123},
abstract={A test structure for charge-based capacitance measurement (CBCM) method has been developed to evaluate the threshold voltage variability from capacitance-voltage (C-V) curves of actual size metal-oxide-semiconductor field-effect-transistors (MOSFETs). The C-V curves from accumulation to inversion are measured for the MOSFETs having various channel dimensions using this test structure. Intrinsic capacitance components between the MOSFET electrodes are extracted from those C-V curves which are considered to include parasitic capacitance component. The intrinsic C-V curves are used for attempting to extract threshold voltage variations of their MOSFETs. It is found that the developed test structure is very useful for the evaluation of MOSFETs variability, because the derivation in MOSFET C-V curves is not influenced by current measurement noise.},
keywords={},
doi={10.1587/transele.E97.C.1117},
ISSN={1745-1353},
month={November},}
Copy
TY - JOUR
TI - Development of Test Structure for Variability Evaluation using Charge-Based Capacitance Measurement
T2 - IEICE TRANSACTIONS on Electronics
SP - 1117
EP - 1123
AU - Katsuhiro TSUJI
AU - Kazuo TERADA
AU - Ryota KIKUCHI
PY - 2014
DO - 10.1587/transele.E97.C.1117
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E97-C
IS - 11
JA - IEICE TRANSACTIONS on Electronics
Y1 - November 2014
AB - A test structure for charge-based capacitance measurement (CBCM) method has been developed to evaluate the threshold voltage variability from capacitance-voltage (C-V) curves of actual size metal-oxide-semiconductor field-effect-transistors (MOSFETs). The C-V curves from accumulation to inversion are measured for the MOSFETs having various channel dimensions using this test structure. Intrinsic capacitance components between the MOSFET electrodes are extracted from those C-V curves which are considered to include parasitic capacitance component. The intrinsic C-V curves are used for attempting to extract threshold voltage variations of their MOSFETs. It is found that the developed test structure is very useful for the evaluation of MOSFETs variability, because the derivation in MOSFET C-V curves is not influenced by current measurement noise.
ER -
English
