A Method for Measuring of RTN by Boosting Word-Line Voltage in 6-Tr-SRAMs
Summary :
In order to analyze an impact of threshold voltage (Vth) fluctuation induced by random telegraph noise (RTN) on LSI circuit design, we measured a 40-nm 6-Tr-SRAM TEG which enables to evaluate individual bit-line current. RTN phenomenon was successfully measured and we also identified that the transfer MOSFET in an SRAM bit-cell was the most sensitive MOSFET. The proposed word line boosting technique, which applies slightly extra stress to the transfer MOSFET, improves about 30% of detecting probability of fail-bit cells caused by RTN.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E97-C No.3 pp.215-221
- Publication Date
- 2014/03/01
- Publicized
- Online ISSN
- 1745-1353
- DOI
- 10.1587/transele.E97.C.215
- Type of Manuscript
- PAPER
- Category
- Integrated Electronics
Authors
Goichi ONO
Hitachi, Ltd.,Kobe University
Yuki MORI
Hitachi, Ltd.
Michiaki NAKAYAMA
Hitachi Ltd.
Yusuke KANNO
Hitachi, Ltd.
Keyword
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Goichi ONO, Yuki MORI, Michiaki NAKAYAMA, Yusuke KANNO, "A Method for Measuring of RTN by Boosting Word-Line Voltage in 6-Tr-SRAMs" in IEICE TRANSACTIONS on Electronics,
vol. E97-C, no. 3, pp. 215-221, March 2014, doi: 10.1587/transele.E97.C.215.
Abstract: In order to analyze an impact of threshold voltage (Vth) fluctuation induced by random telegraph noise (RTN) on LSI circuit design, we measured a 40-nm 6-Tr-SRAM TEG which enables to evaluate individual bit-line current. RTN phenomenon was successfully measured and we also identified that the transfer MOSFET in an SRAM bit-cell was the most sensitive MOSFET. The proposed word line boosting technique, which applies slightly extra stress to the transfer MOSFET, improves about 30% of detecting probability of fail-bit cells caused by RTN.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.E97.C.215/_p
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@ARTICLE{e97-c_3_215,
author={Goichi ONO, Yuki MORI, Michiaki NAKAYAMA, Yusuke KANNO, },
journal={IEICE TRANSACTIONS on Electronics},
title={A Method for Measuring of RTN by Boosting Word-Line Voltage in 6-Tr-SRAMs},
year={2014},
volume={E97-C},
number={3},
pages={215-221},
abstract={In order to analyze an impact of threshold voltage (Vth) fluctuation induced by random telegraph noise (RTN) on LSI circuit design, we measured a 40-nm 6-Tr-SRAM TEG which enables to evaluate individual bit-line current. RTN phenomenon was successfully measured and we also identified that the transfer MOSFET in an SRAM bit-cell was the most sensitive MOSFET. The proposed word line boosting technique, which applies slightly extra stress to the transfer MOSFET, improves about 30% of detecting probability of fail-bit cells caused by RTN.},
keywords={},
doi={10.1587/transele.E97.C.215},
ISSN={1745-1353},
month={March},}
Copy
TY - JOUR
TI - A Method for Measuring of RTN by Boosting Word-Line Voltage in 6-Tr-SRAMs
T2 - IEICE TRANSACTIONS on Electronics
SP - 215
EP - 221
AU - Goichi ONO
AU - Yuki MORI
AU - Michiaki NAKAYAMA
AU - Yusuke KANNO
PY - 2014
DO - 10.1587/transele.E97.C.215
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E97-C
IS - 3
JA - IEICE TRANSACTIONS on Electronics
Y1 - March 2014
AB - In order to analyze an impact of threshold voltage (Vth) fluctuation induced by random telegraph noise (RTN) on LSI circuit design, we measured a 40-nm 6-Tr-SRAM TEG which enables to evaluate individual bit-line current. RTN phenomenon was successfully measured and we also identified that the transfer MOSFET in an SRAM bit-cell was the most sensitive MOSFET. The proposed word line boosting technique, which applies slightly extra stress to the transfer MOSFET, improves about 30% of detecting probability of fail-bit cells caused by RTN.
ER -
English
