IEICE TRANSACTIONS on Electronics
A Temperature Tracking Read Reference Current and Write Voltage Generator for Multi-Level Phase Change Memories
Summary :
This paper gives a write voltage and read reference current generator considering temperature characteristics for multi-level Ge2Sb2Te5-based phase change memories. Since the optimum SET and RESET voltages linearly changes by the temperature, the voltage supply circuit must track this characteristic. In addition, the measurement results show that the read current depends on both read temperature and the write temperature and has exponential dependence on the read temperature. Thus, the binning technique is applied for each read and write temperature regions. The proposed variable TC generator can achieve below ±0.5 LSB precision from the measured differential non-linearity and integral non-linearity. As a result, the temperature characteristics of both the linear write voltage and the exponential read current can be tracked with the proposed variation tolerant linear temperature coefficient current generator.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E97-C No.4 pp.342-350
- Publication Date
- 2014/04/01
- Publicized
- Online ISSN
- 1745-1353
- DOI
- 10.1587/transele.E97.C.342
- Type of Manuscript
- Special Section PAPER (Special Section on Solid-State Circuit Design,---,Architecture, Circuit, Device and Design Methodology)
- Category
Authors
Koh JOHGUCHI
Chuo University
Toru EGAMI
Chuo University
Kousuke MIYAJI
Chuo University,Shinshu University
Ken TAKEUCHI
Chuo University
Keyword
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Koh JOHGUCHI, Toru EGAMI, Kousuke MIYAJI, Ken TAKEUCHI, "A Temperature Tracking Read Reference Current and Write Voltage Generator for Multi-Level Phase Change Memories" in IEICE TRANSACTIONS on Electronics,
vol. E97-C, no. 4, pp. 342-350, April 2014, doi: 10.1587/transele.E97.C.342.
Abstract: This paper gives a write voltage and read reference current generator considering temperature characteristics for multi-level Ge2Sb2Te5-based phase change memories. Since the optimum SET and RESET voltages linearly changes by the temperature, the voltage supply circuit must track this characteristic. In addition, the measurement results show that the read current depends on both read temperature and the write temperature and has exponential dependence on the read temperature. Thus, the binning technique is applied for each read and write temperature regions. The proposed variable TC generator can achieve below ±0.5 LSB precision from the measured differential non-linearity and integral non-linearity. As a result, the temperature characteristics of both the linear write voltage and the exponential read current can be tracked with the proposed variation tolerant linear temperature coefficient current generator.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.E97.C.342/_p
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@ARTICLE{e97-c_4_342,
author={Koh JOHGUCHI, Toru EGAMI, Kousuke MIYAJI, Ken TAKEUCHI, },
journal={IEICE TRANSACTIONS on Electronics},
title={A Temperature Tracking Read Reference Current and Write Voltage Generator for Multi-Level Phase Change Memories},
year={2014},
volume={E97-C},
number={4},
pages={342-350},
abstract={This paper gives a write voltage and read reference current generator considering temperature characteristics for multi-level Ge2Sb2Te5-based phase change memories. Since the optimum SET and RESET voltages linearly changes by the temperature, the voltage supply circuit must track this characteristic. In addition, the measurement results show that the read current depends on both read temperature and the write temperature and has exponential dependence on the read temperature. Thus, the binning technique is applied for each read and write temperature regions. The proposed variable TC generator can achieve below ±0.5 LSB precision from the measured differential non-linearity and integral non-linearity. As a result, the temperature characteristics of both the linear write voltage and the exponential read current can be tracked with the proposed variation tolerant linear temperature coefficient current generator.},
keywords={},
doi={10.1587/transele.E97.C.342},
ISSN={1745-1353},
month={April},}
Copy
TY - JOUR
TI - A Temperature Tracking Read Reference Current and Write Voltage Generator for Multi-Level Phase Change Memories
T2 - IEICE TRANSACTIONS on Electronics
SP - 342
EP - 350
AU - Koh JOHGUCHI
AU - Toru EGAMI
AU - Kousuke MIYAJI
AU - Ken TAKEUCHI
PY - 2014
DO - 10.1587/transele.E97.C.342
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E97-C
IS - 4
JA - IEICE TRANSACTIONS on Electronics
Y1 - April 2014
AB - This paper gives a write voltage and read reference current generator considering temperature characteristics for multi-level Ge2Sb2Te5-based phase change memories. Since the optimum SET and RESET voltages linearly changes by the temperature, the voltage supply circuit must track this characteristic. In addition, the measurement results show that the read current depends on both read temperature and the write temperature and has exponential dependence on the read temperature. Thus, the binning technique is applied for each read and write temperature regions. The proposed variable TC generator can achieve below ±0.5 LSB precision from the measured differential non-linearity and integral non-linearity. As a result, the temperature characteristics of both the linear write voltage and the exponential read current can be tracked with the proposed variation tolerant linear temperature coefficient current generator.
ER -
English
