IEICE TRANSACTIONS on Electronics
Influence of Si Surface Roughness on Electrical Characteristics of MOSFET with HfON Gate Insulator Formed by ECR Plasma Sputtering
Summary :
To improve metal oxide semiconductor field effect transistors (MOSFET) performance, flat interface between gate insulator and silicon (Si) should be realized. In this paper, the influence of Si surface roughness on electrical characteristics of MOSFET with hafnium oxynitride (HfON) gate insulator formed by electron cyclotron resonance (ECR) plasma sputtering was investigated for the first time. The surface roughness of Si substrate was reduced by Ar/4.9%H2 annealing utilizing conventional rapid thermal annealing (RTA) system. The obtained root-mean-square (RMS) roughness was 0.07nm (without annealed: 0.18nm). The HfON was formed by 2nm-thick HfN deposition followed by the Ar/O2 plasma oxidation. The electrical properties of HfON gate insulator were improved by reducing Si surface roughness. It was found that the current drivability of fabricated nMOSFETs was remarkably increased by reducing Si surface roughness. Furthermore, the reduction of Si surface roughness also leads to decrease of the 1/f noise.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E97-C No.5 pp.413-418
- Publication Date
- 2014/05/01
- Publicized
- Online ISSN
- 1745-1353
- DOI
- 10.1587/transele.E97.C.413
- Type of Manuscript
- Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
- Category
Authors
Dae-Hee HAN
Tokyo Institute of Technology
Shun-ichiro OHMI
Tokyo Institute of Technology
Tomoyuki SUWA
Tohoku University
Philippe GAUBERT
Tohoku University
Tadahiro OHMI
Tohoku University
Keyword
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Dae-Hee HAN, Shun-ichiro OHMI, Tomoyuki SUWA, Philippe GAUBERT, Tadahiro OHMI, "Influence of Si Surface Roughness on Electrical Characteristics of MOSFET with HfON Gate Insulator Formed by ECR Plasma Sputtering" in IEICE TRANSACTIONS on Electronics,
vol. E97-C, no. 5, pp. 413-418, May 2014, doi: 10.1587/transele.E97.C.413.
Abstract: To improve metal oxide semiconductor field effect transistors (MOSFET) performance, flat interface between gate insulator and silicon (Si) should be realized. In this paper, the influence of Si surface roughness on electrical characteristics of MOSFET with hafnium oxynitride (HfON) gate insulator formed by electron cyclotron resonance (ECR) plasma sputtering was investigated for the first time. The surface roughness of Si substrate was reduced by Ar/4.9%H2 annealing utilizing conventional rapid thermal annealing (RTA) system. The obtained root-mean-square (RMS) roughness was 0.07nm (without annealed: 0.18nm). The HfON was formed by 2nm-thick HfN deposition followed by the Ar/O2 plasma oxidation. The electrical properties of HfON gate insulator were improved by reducing Si surface roughness. It was found that the current drivability of fabricated nMOSFETs was remarkably increased by reducing Si surface roughness. Furthermore, the reduction of Si surface roughness also leads to decrease of the 1/f noise.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.E97.C.413/_p
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@ARTICLE{e97-c_5_413,
author={Dae-Hee HAN, Shun-ichiro OHMI, Tomoyuki SUWA, Philippe GAUBERT, Tadahiro OHMI, },
journal={IEICE TRANSACTIONS on Electronics},
title={Influence of Si Surface Roughness on Electrical Characteristics of MOSFET with HfON Gate Insulator Formed by ECR Plasma Sputtering},
year={2014},
volume={E97-C},
number={5},
pages={413-418},
abstract={To improve metal oxide semiconductor field effect transistors (MOSFET) performance, flat interface between gate insulator and silicon (Si) should be realized. In this paper, the influence of Si surface roughness on electrical characteristics of MOSFET with hafnium oxynitride (HfON) gate insulator formed by electron cyclotron resonance (ECR) plasma sputtering was investigated for the first time. The surface roughness of Si substrate was reduced by Ar/4.9%H2 annealing utilizing conventional rapid thermal annealing (RTA) system. The obtained root-mean-square (RMS) roughness was 0.07nm (without annealed: 0.18nm). The HfON was formed by 2nm-thick HfN deposition followed by the Ar/O2 plasma oxidation. The electrical properties of HfON gate insulator were improved by reducing Si surface roughness. It was found that the current drivability of fabricated nMOSFETs was remarkably increased by reducing Si surface roughness. Furthermore, the reduction of Si surface roughness also leads to decrease of the 1/f noise.},
keywords={},
doi={10.1587/transele.E97.C.413},
ISSN={1745-1353},
month={May},}
Copy
TY - JOUR
TI - Influence of Si Surface Roughness on Electrical Characteristics of MOSFET with HfON Gate Insulator Formed by ECR Plasma Sputtering
T2 - IEICE TRANSACTIONS on Electronics
SP - 413
EP - 418
AU - Dae-Hee HAN
AU - Shun-ichiro OHMI
AU - Tomoyuki SUWA
AU - Philippe GAUBERT
AU - Tadahiro OHMI
PY - 2014
DO - 10.1587/transele.E97.C.413
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E97-C
IS - 5
JA - IEICE TRANSACTIONS on Electronics
Y1 - May 2014
AB - To improve metal oxide semiconductor field effect transistors (MOSFET) performance, flat interface between gate insulator and silicon (Si) should be realized. In this paper, the influence of Si surface roughness on electrical characteristics of MOSFET with hafnium oxynitride (HfON) gate insulator formed by electron cyclotron resonance (ECR) plasma sputtering was investigated for the first time. The surface roughness of Si substrate was reduced by Ar/4.9%H2 annealing utilizing conventional rapid thermal annealing (RTA) system. The obtained root-mean-square (RMS) roughness was 0.07nm (without annealed: 0.18nm). The HfON was formed by 2nm-thick HfN deposition followed by the Ar/O2 plasma oxidation. The electrical properties of HfON gate insulator were improved by reducing Si surface roughness. It was found that the current drivability of fabricated nMOSFETs was remarkably increased by reducing Si surface roughness. Furthermore, the reduction of Si surface roughness also leads to decrease of the 1/f noise.
ER -
English
