IEICE TRANSACTIONS on Electronics
State-Dependence of On-Chip Power Distribution Network Capacitance
Summary :
In this paper, the measurement of capacitance variation, of an on-chip power distribution network (PDN) due to the change of internal states of a CMOS logic circuit, is studied. A state-dependent PDN-capacitance model that explains measurement results will be also proposed. The model is composed of capacitance elements related to MOS transistors, signal and power supply wires, and substrate. Reflecting the changes of electrode potentials, the capacitance elements become state-dependent. The capacitive elements are then all connected in parallel between power supply and ground to form the proposed model. By using the proposed model, state-dependence of PDN-capacitances for different logic circuits are studied in detail. The change of PDN-capacitance exceeds 12% of its total capacitance in some cases, which corresponds to 6% shift of anti-resonance frequency. Consideration of the state-dependence is important for modeling the PDN-capacitance.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E97-C No.1 pp.77-84
- Publication Date
- 2014/01/01
- Publicized
- Online ISSN
- 1745-1353
- DOI
- 10.1587/transele.E97.C.77
- Type of Manuscript
- PAPER
- Category
- Integrated Electronics
Authors
Koh YAMANAGA
Murata Manufacturing Co., Ltd.
Shiho HAGIWARA
Fujitsu Laboratories Ltd.
Ryo TAKAHASHI
The University of Tokyo
Kazuya MASU
Tokyo Institute of Technology
Takashi SATO
Kyoto University
Keyword
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Koh YAMANAGA, Shiho HAGIWARA, Ryo TAKAHASHI, Kazuya MASU, Takashi SATO, "State-Dependence of On-Chip Power Distribution Network Capacitance" in IEICE TRANSACTIONS on Electronics,
vol. E97-C, no. 1, pp. 77-84, January 2014, doi: 10.1587/transele.E97.C.77.
Abstract: In this paper, the measurement of capacitance variation, of an on-chip power distribution network (PDN) due to the change of internal states of a CMOS logic circuit, is studied. A state-dependent PDN-capacitance model that explains measurement results will be also proposed. The model is composed of capacitance elements related to MOS transistors, signal and power supply wires, and substrate. Reflecting the changes of electrode potentials, the capacitance elements become state-dependent. The capacitive elements are then all connected in parallel between power supply and ground to form the proposed model. By using the proposed model, state-dependence of PDN-capacitances for different logic circuits are studied in detail. The change of PDN-capacitance exceeds 12% of its total capacitance in some cases, which corresponds to 6% shift of anti-resonance frequency. Consideration of the state-dependence is important for modeling the PDN-capacitance.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.E97.C.77/_p
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@ARTICLE{e97-c_1_77,
author={Koh YAMANAGA, Shiho HAGIWARA, Ryo TAKAHASHI, Kazuya MASU, Takashi SATO, },
journal={IEICE TRANSACTIONS on Electronics},
title={State-Dependence of On-Chip Power Distribution Network Capacitance},
year={2014},
volume={E97-C},
number={1},
pages={77-84},
abstract={In this paper, the measurement of capacitance variation, of an on-chip power distribution network (PDN) due to the change of internal states of a CMOS logic circuit, is studied. A state-dependent PDN-capacitance model that explains measurement results will be also proposed. The model is composed of capacitance elements related to MOS transistors, signal and power supply wires, and substrate. Reflecting the changes of electrode potentials, the capacitance elements become state-dependent. The capacitive elements are then all connected in parallel between power supply and ground to form the proposed model. By using the proposed model, state-dependence of PDN-capacitances for different logic circuits are studied in detail. The change of PDN-capacitance exceeds 12% of its total capacitance in some cases, which corresponds to 6% shift of anti-resonance frequency. Consideration of the state-dependence is important for modeling the PDN-capacitance.},
keywords={},
doi={10.1587/transele.E97.C.77},
ISSN={1745-1353},
month={January},}
Copy
TY - JOUR
TI - State-Dependence of On-Chip Power Distribution Network Capacitance
T2 - IEICE TRANSACTIONS on Electronics
SP - 77
EP - 84
AU - Koh YAMANAGA
AU - Shiho HAGIWARA
AU - Ryo TAKAHASHI
AU - Kazuya MASU
AU - Takashi SATO
PY - 2014
DO - 10.1587/transele.E97.C.77
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E97-C
IS - 1
JA - IEICE TRANSACTIONS on Electronics
Y1 - January 2014
AB - In this paper, the measurement of capacitance variation, of an on-chip power distribution network (PDN) due to the change of internal states of a CMOS logic circuit, is studied. A state-dependent PDN-capacitance model that explains measurement results will be also proposed. The model is composed of capacitance elements related to MOS transistors, signal and power supply wires, and substrate. Reflecting the changes of electrode potentials, the capacitance elements become state-dependent. The capacitive elements are then all connected in parallel between power supply and ground to form the proposed model. By using the proposed model, state-dependence of PDN-capacitances for different logic circuits are studied in detail. The change of PDN-capacitance exceeds 12% of its total capacitance in some cases, which corresponds to 6% shift of anti-resonance frequency. Consideration of the state-dependence is important for modeling the PDN-capacitance.
ER -
English
