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High-Power Photodiodes for Analog Applications
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Summary :
This paper summarizes recent progress on modified uni-traveling carrier photodiodes that have achieved RF output power levels of 1.8 Watt and 4.4 Watt in continuous wave and pulsed operation, respectively. Flip-chip bonded discrete photodiodes, narrowband photodiodes, and photodiodes integrated with antennas are described.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E98-C No.8 pp.764-768
- Publication Date
- 2015/08/01
- Publicized
- Online ISSN
- 1745-1353
- DOI
- 10.1587/transele.E98.C.764
- Type of Manuscript
- Special Section INVITED PAPER (Special Section on Microwave Photonics)
- Category
Authors
Andreas BELING
University of Virginia
Joe C. CAMPBELL
University of Virginia
Kejia LI
University of Virginia
Qinglong LI
University of Virginia
Ye WANG
University of Virginia
Madison E. WOODSON
University of Virginia
Xiaojun XIE
University of Virginia
Zhanyu YANG
University of Virginia
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Andreas BELING, Joe C. CAMPBELL, Kejia LI, Qinglong LI, Ye WANG, Madison E. WOODSON, Xiaojun XIE, Zhanyu YANG, "High-Power Photodiodes for Analog Applications" in IEICE TRANSACTIONS on Electronics,
vol. E98-C, no. 8, pp. 764-768, August 2015, doi: 10.1587/transele.E98.C.764.
Abstract: This paper summarizes recent progress on modified uni-traveling carrier photodiodes that have achieved RF output power levels of 1.8 Watt and 4.4 Watt in continuous wave and pulsed operation, respectively. Flip-chip bonded discrete photodiodes, narrowband photodiodes, and photodiodes integrated with antennas are described.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.E98.C.764/_p
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@ARTICLE{e98-c_8_764,
author={Andreas BELING, Joe C. CAMPBELL, Kejia LI, Qinglong LI, Ye WANG, Madison E. WOODSON, Xiaojun XIE, Zhanyu YANG, },
journal={IEICE TRANSACTIONS on Electronics},
title={High-Power Photodiodes for Analog Applications},
year={2015},
volume={E98-C},
number={8},
pages={764-768},
abstract={This paper summarizes recent progress on modified uni-traveling carrier photodiodes that have achieved RF output power levels of 1.8 Watt and 4.4 Watt in continuous wave and pulsed operation, respectively. Flip-chip bonded discrete photodiodes, narrowband photodiodes, and photodiodes integrated with antennas are described.},
keywords={},
doi={10.1587/transele.E98.C.764},
ISSN={1745-1353},
month={August},}
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TY - JOUR
TI - High-Power Photodiodes for Analog Applications
T2 - IEICE TRANSACTIONS on Electronics
SP - 764
EP - 768
AU - Andreas BELING
AU - Joe C. CAMPBELL
AU - Kejia LI
AU - Qinglong LI
AU - Ye WANG
AU - Madison E. WOODSON
AU - Xiaojun XIE
AU - Zhanyu YANG
PY - 2015
DO - 10.1587/transele.E98.C.764
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E98-C
IS - 8
JA - IEICE TRANSACTIONS on Electronics
Y1 - August 2015
AB - This paper summarizes recent progress on modified uni-traveling carrier photodiodes that have achieved RF output power levels of 1.8 Watt and 4.4 Watt in continuous wave and pulsed operation, respectively. Flip-chip bonded discrete photodiodes, narrowband photodiodes, and photodiodes integrated with antennas are described.
ER -
English
