IEICE TRANSACTIONS on Electronics
Compact Analytical Threshold Voltage Model of Strained Gate-All-Around MOSFET Fabricated on Si1-xGex Virtual Substrate
Summary :
In this paper, an analytical threshold voltage model of the strained gate-all-around MOSFET fabricated on the Si1-xGex virtual substrate is presented by solving the two-dimensional Poisson equation. The impact of key parameters such as the strain, channel length, gate oxide thickness and radius of the silicon cylinder on the threshold voltage has been investigated. It has been demonstrated that the threshold voltage decreases as the strain in the channel increases. The threshold voltage roll-off becomes severe when increasing the Ge content in the Si1-xGex virtual substrate. The model is found to tally well with the device simulator.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E99-C No.2 pp.302-307
- Publication Date
- 2016/02/01
- Publicized
- Online ISSN
- 1745-1353
- DOI
- 10.1587/transele.E99.C.302
- Type of Manuscript
- PAPER
- Category
- Semiconductor Materials and Devices
Authors
Yefei ZHANG
Xi'an Jiaotong University
Zunchao LI
Xi'an Jiaotong University
Chuang WANG
Xi'an Jiaotong University
Feng LIANG
Xi'an Jiaotong University
Keyword
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Yefei ZHANG, Zunchao LI, Chuang WANG, Feng LIANG, "Compact Analytical Threshold Voltage Model of Strained Gate-All-Around MOSFET Fabricated on Si1-xGex Virtual Substrate" in IEICE TRANSACTIONS on Electronics,
vol. E99-C, no. 2, pp. 302-307, February 2016, doi: 10.1587/transele.E99.C.302.
Abstract: In this paper, an analytical threshold voltage model of the strained gate-all-around MOSFET fabricated on the Si1-xGex virtual substrate is presented by solving the two-dimensional Poisson equation. The impact of key parameters such as the strain, channel length, gate oxide thickness and radius of the silicon cylinder on the threshold voltage has been investigated. It has been demonstrated that the threshold voltage decreases as the strain in the channel increases. The threshold voltage roll-off becomes severe when increasing the Ge content in the Si1-xGex virtual substrate. The model is found to tally well with the device simulator.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.E99.C.302/_p
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@ARTICLE{e99-c_2_302,
author={Yefei ZHANG, Zunchao LI, Chuang WANG, Feng LIANG, },
journal={IEICE TRANSACTIONS on Electronics},
title={Compact Analytical Threshold Voltage Model of Strained Gate-All-Around MOSFET Fabricated on Si1-xGex Virtual Substrate},
year={2016},
volume={E99-C},
number={2},
pages={302-307},
abstract={In this paper, an analytical threshold voltage model of the strained gate-all-around MOSFET fabricated on the Si1-xGex virtual substrate is presented by solving the two-dimensional Poisson equation. The impact of key parameters such as the strain, channel length, gate oxide thickness and radius of the silicon cylinder on the threshold voltage has been investigated. It has been demonstrated that the threshold voltage decreases as the strain in the channel increases. The threshold voltage roll-off becomes severe when increasing the Ge content in the Si1-xGex virtual substrate. The model is found to tally well with the device simulator.},
keywords={},
doi={10.1587/transele.E99.C.302},
ISSN={1745-1353},
month={February},}
Copy
TY - JOUR
TI - Compact Analytical Threshold Voltage Model of Strained Gate-All-Around MOSFET Fabricated on Si1-xGex Virtual Substrate
T2 - IEICE TRANSACTIONS on Electronics
SP - 302
EP - 307
AU - Yefei ZHANG
AU - Zunchao LI
AU - Chuang WANG
AU - Feng LIANG
PY - 2016
DO - 10.1587/transele.E99.C.302
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E99-C
IS - 2
JA - IEICE TRANSACTIONS on Electronics
Y1 - February 2016
AB - In this paper, an analytical threshold voltage model of the strained gate-all-around MOSFET fabricated on the Si1-xGex virtual substrate is presented by solving the two-dimensional Poisson equation. The impact of key parameters such as the strain, channel length, gate oxide thickness and radius of the silicon cylinder on the threshold voltage has been investigated. It has been demonstrated that the threshold voltage decreases as the strain in the channel increases. The threshold voltage roll-off becomes severe when increasing the Ge content in the Si1-xGex virtual substrate. The model is found to tally well with the device simulator.
ER -
English
