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Room-Temperature Gold-Gold Bonding Method Based on Argon and Hydrogen Gas Mixture Atmospheric-Pressure Plasma Treatment for Optoelectronic Device Integration
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Low-temperature bonding methods of optoelectronic chips, such as laser diodes (LD) and photodiode (PD) chips, have been the focus of much interest to develop highly functional and compact optoelectronic devices, such as microsensors and communication modules. In this paper, room-temperature bonding of the optoelectronic chips with Au thin film to coined Au stud bumps with smooth surfaces (Ra: 1.3nm) using argon and hydrogen gas mixture atmospheric-pressure plasma was demonstrated in ambient air. The die-shear strength was high enough to exceed the strength requirement of MIL-STD-883F, method 2019 (×2). The measured results of the light-current-voltage characteristics of the LD chips and the dark current-voltage characteristics of the PD chips indicated no degradation after bonding.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E99-C No.3 pp.339-345
- Publication Date
- 2016/03/01
- Publicized
- Online ISSN
- 1745-1353
- DOI
- 10.1587/transele.E99.C.339
- Type of Manuscript
- Special Section INVITED PAPER (Special Section on Progress towards System Nanotechnology)
- Category
Authors
Eiji HIGURASHI
The University of Tokyo
Michitaka YAMAMOTO
The University of Tokyo
Takeshi SATO
The University of Tokyo
Tadatomo SUGA
The University of Tokyo
Renshi SAWADA
Kyushu University
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Eiji HIGURASHI, Michitaka YAMAMOTO, Takeshi SATO, Tadatomo SUGA, Renshi SAWADA, "Room-Temperature Gold-Gold Bonding Method Based on Argon and Hydrogen Gas Mixture Atmospheric-Pressure Plasma Treatment for Optoelectronic Device Integration" in IEICE TRANSACTIONS on Electronics,
vol. E99-C, no. 3, pp. 339-345, March 2016, doi: 10.1587/transele.E99.C.339.
Abstract: Low-temperature bonding methods of optoelectronic chips, such as laser diodes (LD) and photodiode (PD) chips, have been the focus of much interest to develop highly functional and compact optoelectronic devices, such as microsensors and communication modules. In this paper, room-temperature bonding of the optoelectronic chips with Au thin film to coined Au stud bumps with smooth surfaces (Ra: 1.3nm) using argon and hydrogen gas mixture atmospheric-pressure plasma was demonstrated in ambient air. The die-shear strength was high enough to exceed the strength requirement of MIL-STD-883F, method 2019 (×2). The measured results of the light-current-voltage characteristics of the LD chips and the dark current-voltage characteristics of the PD chips indicated no degradation after bonding.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.E99.C.339/_p
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@ARTICLE{e99-c_3_339,
author={Eiji HIGURASHI, Michitaka YAMAMOTO, Takeshi SATO, Tadatomo SUGA, Renshi SAWADA, },
journal={IEICE TRANSACTIONS on Electronics},
title={Room-Temperature Gold-Gold Bonding Method Based on Argon and Hydrogen Gas Mixture Atmospheric-Pressure Plasma Treatment for Optoelectronic Device Integration},
year={2016},
volume={E99-C},
number={3},
pages={339-345},
abstract={Low-temperature bonding methods of optoelectronic chips, such as laser diodes (LD) and photodiode (PD) chips, have been the focus of much interest to develop highly functional and compact optoelectronic devices, such as microsensors and communication modules. In this paper, room-temperature bonding of the optoelectronic chips with Au thin film to coined Au stud bumps with smooth surfaces (Ra: 1.3nm) using argon and hydrogen gas mixture atmospheric-pressure plasma was demonstrated in ambient air. The die-shear strength was high enough to exceed the strength requirement of MIL-STD-883F, method 2019 (×2). The measured results of the light-current-voltage characteristics of the LD chips and the dark current-voltage characteristics of the PD chips indicated no degradation after bonding.},
keywords={},
doi={10.1587/transele.E99.C.339},
ISSN={1745-1353},
month={March},}
Copy
TY - JOUR
TI - Room-Temperature Gold-Gold Bonding Method Based on Argon and Hydrogen Gas Mixture Atmospheric-Pressure Plasma Treatment for Optoelectronic Device Integration
T2 - IEICE TRANSACTIONS on Electronics
SP - 339
EP - 345
AU - Eiji HIGURASHI
AU - Michitaka YAMAMOTO
AU - Takeshi SATO
AU - Tadatomo SUGA
AU - Renshi SAWADA
PY - 2016
DO - 10.1587/transele.E99.C.339
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E99-C
IS - 3
JA - IEICE TRANSACTIONS on Electronics
Y1 - March 2016
AB - Low-temperature bonding methods of optoelectronic chips, such as laser diodes (LD) and photodiode (PD) chips, have been the focus of much interest to develop highly functional and compact optoelectronic devices, such as microsensors and communication modules. In this paper, room-temperature bonding of the optoelectronic chips with Au thin film to coined Au stud bumps with smooth surfaces (Ra: 1.3nm) using argon and hydrogen gas mixture atmospheric-pressure plasma was demonstrated in ambient air. The die-shear strength was high enough to exceed the strength requirement of MIL-STD-883F, method 2019 (×2). The measured results of the light-current-voltage characteristics of the LD chips and the dark current-voltage characteristics of the PD chips indicated no degradation after bonding.
ER -
English
