IEICE TRANSACTIONS on Electronics
STM Study on Adsorption Structures of Cs on the As-Terminated GaAs(001) (2×4) Surface by Alternating Supply of Cs and O2
Summary :
Negative electron affinity (NEA) surfaces can be formed by alternating supply of alkali metals (e.g. Cs, Rb, K) and oxygen on semiconductor surfaces. We have studied adsorption structures of Cs on an As-terminated (2×4) (001) GaAs surface using scanning tunneling microscopy (STM). We found that the initial adsorption of Cs atoms occurs around the step sites in the form of Cs clusters and that the size of clusters is reduced by successive exposure to O2, indicating that As-terminated (2×4) surfaces are relatively stable compared to Ga-terminated surfaces and are not broken by the Cs clusters adsorption.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E99-C No.3 pp.376-380
- Publication Date
- 2016/03/01
- Publicized
- Online ISSN
- 1745-1353
- DOI
- 10.1587/transele.E99.C.376
- Type of Manuscript
- Special Section PAPER (Special Section on Progress towards System Nanotechnology)
- Category
Authors
Masayuki HIRAO
Tokyo University of Science
Daichi YAMANAKA
Tokyo University of Science
Takanori YAZAKI
Tokyo University of Science
Jun OSAKO
Tokyo University of Science
Hokuto IIJIMA
Tokyo University of Science
Takao SHIOKAWA
RIKEN
Hikota AKIMOTO
RIKEN
Takashi MEGURO
Tokyo University of Science
Keyword
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Masayuki HIRAO, Daichi YAMANAKA, Takanori YAZAKI, Jun OSAKO, Hokuto IIJIMA, Takao SHIOKAWA, Hikota AKIMOTO, Takashi MEGURO, "STM Study on Adsorption Structures of Cs on the As-Terminated GaAs(001) (2×4) Surface by Alternating Supply of Cs and O2" in IEICE TRANSACTIONS on Electronics,
vol. E99-C, no. 3, pp. 376-380, March 2016, doi: 10.1587/transele.E99.C.376.
Abstract: Negative electron affinity (NEA) surfaces can be formed by alternating supply of alkali metals (e.g. Cs, Rb, K) and oxygen on semiconductor surfaces. We have studied adsorption structures of Cs on an As-terminated (2×4) (001) GaAs surface using scanning tunneling microscopy (STM). We found that the initial adsorption of Cs atoms occurs around the step sites in the form of Cs clusters and that the size of clusters is reduced by successive exposure to O2, indicating that As-terminated (2×4) surfaces are relatively stable compared to Ga-terminated surfaces and are not broken by the Cs clusters adsorption.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.E99.C.376/_p
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@ARTICLE{e99-c_3_376,
author={Masayuki HIRAO, Daichi YAMANAKA, Takanori YAZAKI, Jun OSAKO, Hokuto IIJIMA, Takao SHIOKAWA, Hikota AKIMOTO, Takashi MEGURO, },
journal={IEICE TRANSACTIONS on Electronics},
title={STM Study on Adsorption Structures of Cs on the As-Terminated GaAs(001) (2×4) Surface by Alternating Supply of Cs and O2},
year={2016},
volume={E99-C},
number={3},
pages={376-380},
abstract={Negative electron affinity (NEA) surfaces can be formed by alternating supply of alkali metals (e.g. Cs, Rb, K) and oxygen on semiconductor surfaces. We have studied adsorption structures of Cs on an As-terminated (2×4) (001) GaAs surface using scanning tunneling microscopy (STM). We found that the initial adsorption of Cs atoms occurs around the step sites in the form of Cs clusters and that the size of clusters is reduced by successive exposure to O2, indicating that As-terminated (2×4) surfaces are relatively stable compared to Ga-terminated surfaces and are not broken by the Cs clusters adsorption.},
keywords={},
doi={10.1587/transele.E99.C.376},
ISSN={1745-1353},
month={March},}
Copy
TY - JOUR
TI - STM Study on Adsorption Structures of Cs on the As-Terminated GaAs(001) (2×4) Surface by Alternating Supply of Cs and O2
T2 - IEICE TRANSACTIONS on Electronics
SP - 376
EP - 380
AU - Masayuki HIRAO
AU - Daichi YAMANAKA
AU - Takanori YAZAKI
AU - Jun OSAKO
AU - Hokuto IIJIMA
AU - Takao SHIOKAWA
AU - Hikota AKIMOTO
AU - Takashi MEGURO
PY - 2016
DO - 10.1587/transele.E99.C.376
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E99-C
IS - 3
JA - IEICE TRANSACTIONS on Electronics
Y1 - March 2016
AB - Negative electron affinity (NEA) surfaces can be formed by alternating supply of alkali metals (e.g. Cs, Rb, K) and oxygen on semiconductor surfaces. We have studied adsorption structures of Cs on an As-terminated (2×4) (001) GaAs surface using scanning tunneling microscopy (STM). We found that the initial adsorption of Cs atoms occurs around the step sites in the form of Cs clusters and that the size of clusters is reduced by successive exposure to O2, indicating that As-terminated (2×4) surfaces are relatively stable compared to Ga-terminated surfaces and are not broken by the Cs clusters adsorption.
ER -
English
