High Quality Pentacene Film Formation on N-Doped LaB6 Donor Layer
Summary :
In this research, we have investigated the deposition condition of pentacene film on nitrogen doped (N-doped) LaB6 donor layer for larger grain growth at the channel region for bottom-contact type pentacene-based organic field-effect transistors (OFETs) to improve the device characteristics. Source and drain bottom-contacts of Al were patterned and 2nm-thick N-doped LaB6 donor layer was deposited on the SiO2/Si(100) back-gate structure. The dendritic grain growth of pentacene larger than 10µm without lamellar grain growth was demonstrated when the deposition temperature and rate were 100°C and 0.5nm/min, respectively. Furthermore, it was found that the dendritic grain growth was realized at the boundary region of bottom-contact as well as channel region.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E99-C No.5 pp.535-540
- Publication Date
- 2016/05/01
- Publicized
- Online ISSN
- 1745-1353
- DOI
- 10.1587/transele.E99.C.535
- Type of Manuscript
- Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
- Category
Authors
Yasutaka MAEDA
Tokyo Institute of Technology
Shun-ichiro OHMI
Tokyo Institute of Technology
Tetsuya GOTO
Tohoku University
Tadahiro OHMI
Tohoku University
Keyword
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Yasutaka MAEDA, Shun-ichiro OHMI, Tetsuya GOTO, Tadahiro OHMI, "High Quality Pentacene Film Formation on N-Doped LaB6 Donor Layer" in IEICE TRANSACTIONS on Electronics,
vol. E99-C, no. 5, pp. 535-540, May 2016, doi: 10.1587/transele.E99.C.535.
Abstract: In this research, we have investigated the deposition condition of pentacene film on nitrogen doped (N-doped) LaB6 donor layer for larger grain growth at the channel region for bottom-contact type pentacene-based organic field-effect transistors (OFETs) to improve the device characteristics. Source and drain bottom-contacts of Al were patterned and 2nm-thick N-doped LaB6 donor layer was deposited on the SiO2/Si(100) back-gate structure. The dendritic grain growth of pentacene larger than 10µm without lamellar grain growth was demonstrated when the deposition temperature and rate were 100°C and 0.5nm/min, respectively. Furthermore, it was found that the dendritic grain growth was realized at the boundary region of bottom-contact as well as channel region.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.E99.C.535/_p
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@ARTICLE{e99-c_5_535,
author={Yasutaka MAEDA, Shun-ichiro OHMI, Tetsuya GOTO, Tadahiro OHMI, },
journal={IEICE TRANSACTIONS on Electronics},
title={High Quality Pentacene Film Formation on N-Doped LaB6 Donor Layer},
year={2016},
volume={E99-C},
number={5},
pages={535-540},
abstract={In this research, we have investigated the deposition condition of pentacene film on nitrogen doped (N-doped) LaB6 donor layer for larger grain growth at the channel region for bottom-contact type pentacene-based organic field-effect transistors (OFETs) to improve the device characteristics. Source and drain bottom-contacts of Al were patterned and 2nm-thick N-doped LaB6 donor layer was deposited on the SiO2/Si(100) back-gate structure. The dendritic grain growth of pentacene larger than 10µm without lamellar grain growth was demonstrated when the deposition temperature and rate were 100°C and 0.5nm/min, respectively. Furthermore, it was found that the dendritic grain growth was realized at the boundary region of bottom-contact as well as channel region.},
keywords={},
doi={10.1587/transele.E99.C.535},
ISSN={1745-1353},
month={May},}
Copy
TY - JOUR
TI - High Quality Pentacene Film Formation on N-Doped LaB6 Donor Layer
T2 - IEICE TRANSACTIONS on Electronics
SP - 535
EP - 540
AU - Yasutaka MAEDA
AU - Shun-ichiro OHMI
AU - Tetsuya GOTO
AU - Tadahiro OHMI
PY - 2016
DO - 10.1587/transele.E99.C.535
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E99-C
IS - 5
JA - IEICE TRANSACTIONS on Electronics
Y1 - May 2016
AB - In this research, we have investigated the deposition condition of pentacene film on nitrogen doped (N-doped) LaB6 donor layer for larger grain growth at the channel region for bottom-contact type pentacene-based organic field-effect transistors (OFETs) to improve the device characteristics. Source and drain bottom-contacts of Al were patterned and 2nm-thick N-doped LaB6 donor layer was deposited on the SiO2/Si(100) back-gate structure. The dendritic grain growth of pentacene larger than 10µm without lamellar grain growth was demonstrated when the deposition temperature and rate were 100°C and 0.5nm/min, respectively. Furthermore, it was found that the dendritic grain growth was realized at the boundary region of bottom-contact as well as channel region.
ER -
English
