In this research, the effect of Ar/N2-plasma sputtering gas pressure on the LaBxNy tunnel and block layer was investigated for pentacene-based floating-gate memory with an amorphous rubrene (α-rubrene) passivation layer. The influence of α-rubrene passivation layer for memory characteristic was examined. The pentacene-based metal/insulator/metal/insulator/semiconductor (MIMIS) diode and organic field-effect transistor (OFET) were fabricated utilizing N-doped LaB6 metal layer and LaBxNy insulator with α-rubrene passivation layer at annealing temperature of 200°C. In the case of MIMIS diode, the leakage current density and the equivalent oxide thickness (EOT) were decreased from 1.2×10-2 A/cm2 to 1.1×10-7 A/cm2 and 3.5 nm to 3.1 nm, respectively, by decreasing the sputtering gas pressure from 0.47 Pa to 0.19 Pa. In the case of floating-gate type OFET with α-rubrene passivation layer, the larger memory window of 0.68 V was obtained with saturation mobility of 2.2×10-2 cm2/(V·s) and subthreshold swing of 199 mV/dec compared to the device without α-rubrene passivation layer.

In this paper, the influence of high-temperature sputtering on the nitrogen-doped (N-doped) LaB6 thin film formation utilizing RF sputtering was investigated. The N-doped LaB6/SiO2/p-Si(100) MOS diode and N-doped LaB6/p-Si(100) of Schottky diode were fabricated. A 30 nm thick N-doped LaB6 thin film was deposited from room temperature (RT) to 150°C. It was found that the resistivity was decreased from 1.5 mΩcm to 0.8 mΩcm by increasing deposition temperature from RT to 150°C. The variation of work function was significantly decreased in case that N-doped LaB6 thin film deposited at 150°C. Furthermore, Schottky characteristic was observed by increasing deposition temperature to 150°C. In addition, the crystallinity of N-doped LaB6 thin film was improved by increasing deposition temperature.

In this study, the effect of nitrogen-doped (N-doped) LaB6 bottom-contact electrodes and interfacial layer (IL) on n-type pentacene-based organic field-effect transistor (OFET) was investigated. The scaled OFET was fabricated by using photolithography for bottom-contact electrodes. A 20-nm-thick N-doped LaB6 bottom-contact electrodes were formed on SiO2/n+-Si(100) substrate by RF sputtering followed by the surface treatment with sulfuric acid and hydrogen peroxide mixture (SPM) followed by diluted hydrofluoric acid (DHF; 1% HF) at room temperature (RT). Then, a 1.2-nm-thick N-doped LaB6 IL was deposited at RT. Finally, a 10-nm-thick pentacene film was deposited at 100°C followed by the Al back-gate electrode formation by using thermal evaporation. The current of electron injection was observed in the air due to the effect of surface treatment and N-doped LaB6 IL.

In this paper, the effect of a nitrogen-doped (N-doped) LaB6 interfacial layer (IL) on p-type pentacene-based OFET was investigated. The pentacene-based OFET with top-contact/back-gate geometry was fabricated. A 2-nm-thick N-doped LaB6 interfacial layer deposited on an 8-nm-thick SiO2 gate insulator. A 10-nm-thick pentacene film was deposited by thermal evaporation at 100°C followed by Au contact and Al back gate electrodes formation. The fabricated OFET showed normally- off characteristics and a steep subthreshold swing (SS) of 84 mV/dec. from ID-VG and ID-VD characteristics. Furthermore, the aging characteristics of 6 months after the fabrication were investigated and it was found that VTH and SS were stable when the N-doped LaB6 IL was introduced at the interface between SiO2 gate insulator and pentacene.

In this research, we have investigated the deposition condition of pentacene film on nitrogen doped (N-doped) LaB6 donor layer for larger grain growth at the channel region for bottom-contact type pentacene-based organic field-effect transistors (OFETs) to improve the device characteristics. Source and drain bottom-contacts of Al were patterned and 2nm-thick N-doped LaB6 donor layer was deposited on the SiO2/Si(100) back-gate structure. The dendritic grain growth of pentacene larger than 10µm without lamellar grain growth was demonstrated when the deposition temperature and rate were 100°C and 0.5nm/min, respectively. Furthermore, it was found that the dendritic grain growth was realized at the boundary region of bottom-contact as well as channel region.

A replacement of an expensive MgO protective layer with relatively inexpensive Lanthanum Hexa Boride (LaB6) has already been proposed. Since LaB6 is not transparent, unlike MgO, the LaB6 panel employs a long sustain gap structure. Since the sustain gap is 2.6 times larger than the distance between sustain and address electrodes, different driving methods from those of the conventional PDPs have to be adopted. For the driving technique of the sustain period, an application of delayed auxiliary pulses on A electrode and the overlap sustain pulse drive are proposed. Luminance degradation with higher sustain frequency driving can be compensated by use of a 2step sustain pulse driving. Low reset luminance and low address voltage are achieved with a square-ramp technique for the reset period. TV operation is successfully realized on AC PDP which incorporated the LaB6 cathodes.