Bi-MOSFET Amplifier for Integration with Multimicroelectrode Array for Extracellular Neuronal Recording
Summary :
A high-gain, low-noise amplifier for microelectrode probe, which integrated multimicroelectrode array for extracellular recording of neural activities and solid state circuits for the amplification of induced signals from the electrodes onto one substrate, was fabricated. In the amplifier, low-noise MOSFETs are used in the first stage, an interstage high-pass filter is incorporated to avoid saturation of the amplifier due to the polarization voltage of the electrode. In the second stage, an operational amplifier incorporating Bi-MOSFETs for the realization of high input impedance and large gain-bandwidth product is used. The gain of the fabricated amplifier is 56 dB for the frequency range between 2 Hz to 10 kHz, the noise voltage is 20µVpp; these satisfied design specifications.
- Publication
- IEICE TRANSACTIONS on Fundamentals Vol.E77-A No.2 pp.388-393
- Publication Date
- 1994/02/25
- Publicized
- Online ISSN
- DOI
- Type of Manuscript
- Special Section PAPER (Special Section on High-Performance MOS Analog Circuits)
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Kohro TAKAHASHI, Satoshi TAKEUCHI, "Bi-MOSFET Amplifier for Integration with Multimicroelectrode Array for Extracellular Neuronal Recording" in IEICE TRANSACTIONS on Fundamentals,
vol. E77-A, no. 2, pp. 388-393, February 1994, doi: .
Abstract: A high-gain, low-noise amplifier for microelectrode probe, which integrated multimicroelectrode array for extracellular recording of neural activities and solid state circuits for the amplification of induced signals from the electrodes onto one substrate, was fabricated. In the amplifier, low-noise MOSFETs are used in the first stage, an interstage high-pass filter is incorporated to avoid saturation of the amplifier due to the polarization voltage of the electrode. In the second stage, an operational amplifier incorporating Bi-MOSFETs for the realization of high input impedance and large gain-bandwidth product is used. The gain of the fabricated amplifier is 56 dB for the frequency range between 2 Hz to 10 kHz, the noise voltage is 20µVpp; these satisfied design specifications.
URL: https://global.ieice.org/en_transactions/fundamentals/10.1587/e77-a_2_388/_p
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@ARTICLE{e77-a_2_388,
author={Kohro TAKAHASHI, Satoshi TAKEUCHI, },
journal={IEICE TRANSACTIONS on Fundamentals},
title={Bi-MOSFET Amplifier for Integration with Multimicroelectrode Array for Extracellular Neuronal Recording},
year={1994},
volume={E77-A},
number={2},
pages={388-393},
abstract={A high-gain, low-noise amplifier for microelectrode probe, which integrated multimicroelectrode array for extracellular recording of neural activities and solid state circuits for the amplification of induced signals from the electrodes onto one substrate, was fabricated. In the amplifier, low-noise MOSFETs are used in the first stage, an interstage high-pass filter is incorporated to avoid saturation of the amplifier due to the polarization voltage of the electrode. In the second stage, an operational amplifier incorporating Bi-MOSFETs for the realization of high input impedance and large gain-bandwidth product is used. The gain of the fabricated amplifier is 56 dB for the frequency range between 2 Hz to 10 kHz, the noise voltage is 20µVpp; these satisfied design specifications.},
keywords={},
doi={},
ISSN={},
month={February},}
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TY - JOUR
TI - Bi-MOSFET Amplifier for Integration with Multimicroelectrode Array for Extracellular Neuronal Recording
T2 - IEICE TRANSACTIONS on Fundamentals
SP - 388
EP - 393
AU - Kohro TAKAHASHI
AU - Satoshi TAKEUCHI
PY - 1994
DO -
JO - IEICE TRANSACTIONS on Fundamentals
SN -
VL - E77-A
IS - 2
JA - IEICE TRANSACTIONS on Fundamentals
Y1 - February 1994
AB - A high-gain, low-noise amplifier for microelectrode probe, which integrated multimicroelectrode array for extracellular recording of neural activities and solid state circuits for the amplification of induced signals from the electrodes onto one substrate, was fabricated. In the amplifier, low-noise MOSFETs are used in the first stage, an interstage high-pass filter is incorporated to avoid saturation of the amplifier due to the polarization voltage of the electrode. In the second stage, an operational amplifier incorporating Bi-MOSFETs for the realization of high input impedance and large gain-bandwidth product is used. The gain of the fabricated amplifier is 56 dB for the frequency range between 2 Hz to 10 kHz, the noise voltage is 20µVpp; these satisfied design specifications.
ER -
English
