This paper describes a parameter extraction system that can easily accommodate many MOSFET models. The model-adaptability is contributed by tow factors; a model-adaptable initial value estimation technique and an environment which stores and reuses extraction procedures. A designer can easily develop an extraction procedure for a new MOSFET model by modifying a procedure for another MOSFET model developed previously. We have verified that the system is suitable for major SPICE models.
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Masaki KONDO, Takashi MORIE, Hidetoshi ONODERA, Keikichi TAMARU, "Model-Adaptable Parameter Extraction System for MOSFET Models" in IEICE TRANSACTIONS on Fundamentals,
vol. E78-A, no. 5, pp. 569-572, May 1995, doi: .
Abstract: This paper describes a parameter extraction system that can easily accommodate many MOSFET models. The model-adaptability is contributed by tow factors; a model-adaptable initial value estimation technique and an environment which stores and reuses extraction procedures. A designer can easily develop an extraction procedure for a new MOSFET model by modifying a procedure for another MOSFET model developed previously. We have verified that the system is suitable for major SPICE models.
URL: https://global.ieice.org/en_transactions/fundamentals/10.1587/e78-a_5_569/_p
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@ARTICLE{e78-a_5_569,
author={Masaki KONDO, Takashi MORIE, Hidetoshi ONODERA, Keikichi TAMARU, },
journal={IEICE TRANSACTIONS on Fundamentals},
title={Model-Adaptable Parameter Extraction System for MOSFET Models},
year={1995},
volume={E78-A},
number={5},
pages={569-572},
abstract={This paper describes a parameter extraction system that can easily accommodate many MOSFET models. The model-adaptability is contributed by tow factors; a model-adaptable initial value estimation technique and an environment which stores and reuses extraction procedures. A designer can easily develop an extraction procedure for a new MOSFET model by modifying a procedure for another MOSFET model developed previously. We have verified that the system is suitable for major SPICE models.},
keywords={},
doi={},
ISSN={},
month={May},}
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TY - JOUR
TI - Model-Adaptable Parameter Extraction System for MOSFET Models
T2 - IEICE TRANSACTIONS on Fundamentals
SP - 569
EP - 572
AU - Masaki KONDO
AU - Takashi MORIE
AU - Hidetoshi ONODERA
AU - Keikichi TAMARU
PY - 1995
DO -
JO - IEICE TRANSACTIONS on Fundamentals
SN -
VL - E78-A
IS - 5
JA - IEICE TRANSACTIONS on Fundamentals
Y1 - May 1995
AB - This paper describes a parameter extraction system that can easily accommodate many MOSFET models. The model-adaptability is contributed by tow factors; a model-adaptable initial value estimation technique and an environment which stores and reuses extraction procedures. A designer can easily develop an extraction procedure for a new MOSFET model by modifying a procedure for another MOSFET model developed previously. We have verified that the system is suitable for major SPICE models.
ER -