IEICE TRANSACTIONS on Fundamentals
Nonlinear Resistor Circuits Using Capacitively Coupled Multi-Input MOSFETs
Summary :
A family of nonlinear resistor circuits with Λ and V-type I-V characteristics is proposed by using capacitively coupled multi-input MOSFETs. Their I-V characteristics can be easily altered by external control voltages. Moreover, the proposed circuits are fully compatible with a standard CMOS semiconductor process because only enhancement-type MOSFETs are necessary. Furthermore, nonlinear capacitors can be used for the capacitively coupled multi-input MOSFETs in the proposed circuits, so that a simple digital CMOS process with nonlinear capacitors can be used to fabricate the proposed circuits. Simple equations for a numerical simulation of the circuits are derived. Moreover, results from numerical simulations and experiments with discrete elements are demonstrated.
- Publication
- IEICE TRANSACTIONS on Fundamentals Vol.E82-A No.9 pp.1926-1936
- Publication Date
- 1999/09/25
- Publicized
- Online ISSN
- DOI
- Type of Manuscript
- PAPER
- Category
- Circuit Theory
Authors
Keyword
Latest Issue
Copyrights notice of machine-translated contents
The copyright of the original papers published on this site belongs to IEICE. Unauthorized use of the original or translated papers is prohibited. See IEICE Provisions on Copyright for details.
Cite this
Copy
Yoshihiko HORIO, Ken'ichi WATARAI, Kazuyuki AIHARA, "Nonlinear Resistor Circuits Using Capacitively Coupled Multi-Input MOSFETs" in IEICE TRANSACTIONS on Fundamentals,
vol. E82-A, no. 9, pp. 1926-1936, September 1999, doi: .
Abstract: A family of nonlinear resistor circuits with Λ and V-type I-V characteristics is proposed by using capacitively coupled multi-input MOSFETs. Their I-V characteristics can be easily altered by external control voltages. Moreover, the proposed circuits are fully compatible with a standard CMOS semiconductor process because only enhancement-type MOSFETs are necessary. Furthermore, nonlinear capacitors can be used for the capacitively coupled multi-input MOSFETs in the proposed circuits, so that a simple digital CMOS process with nonlinear capacitors can be used to fabricate the proposed circuits. Simple equations for a numerical simulation of the circuits are derived. Moreover, results from numerical simulations and experiments with discrete elements are demonstrated.
URL: https://global.ieice.org/en_transactions/fundamentals/10.1587/e82-a_9_1926/_p
Copy
@ARTICLE{e82-a_9_1926,
author={Yoshihiko HORIO, Ken'ichi WATARAI, Kazuyuki AIHARA, },
journal={IEICE TRANSACTIONS on Fundamentals},
title={Nonlinear Resistor Circuits Using Capacitively Coupled Multi-Input MOSFETs},
year={1999},
volume={E82-A},
number={9},
pages={1926-1936},
abstract={A family of nonlinear resistor circuits with Λ and V-type I-V characteristics is proposed by using capacitively coupled multi-input MOSFETs. Their I-V characteristics can be easily altered by external control voltages. Moreover, the proposed circuits are fully compatible with a standard CMOS semiconductor process because only enhancement-type MOSFETs are necessary. Furthermore, nonlinear capacitors can be used for the capacitively coupled multi-input MOSFETs in the proposed circuits, so that a simple digital CMOS process with nonlinear capacitors can be used to fabricate the proposed circuits. Simple equations for a numerical simulation of the circuits are derived. Moreover, results from numerical simulations and experiments with discrete elements are demonstrated.},
keywords={},
doi={},
ISSN={},
month={September},}
Copy
TY - JOUR
TI - Nonlinear Resistor Circuits Using Capacitively Coupled Multi-Input MOSFETs
T2 - IEICE TRANSACTIONS on Fundamentals
SP - 1926
EP - 1936
AU - Yoshihiko HORIO
AU - Ken'ichi WATARAI
AU - Kazuyuki AIHARA
PY - 1999
DO -
JO - IEICE TRANSACTIONS on Fundamentals
SN -
VL - E82-A
IS - 9
JA - IEICE TRANSACTIONS on Fundamentals
Y1 - September 1999
AB - A family of nonlinear resistor circuits with Λ and V-type I-V characteristics is proposed by using capacitively coupled multi-input MOSFETs. Their I-V characteristics can be easily altered by external control voltages. Moreover, the proposed circuits are fully compatible with a standard CMOS semiconductor process because only enhancement-type MOSFETs are necessary. Furthermore, nonlinear capacitors can be used for the capacitively coupled multi-input MOSFETs in the proposed circuits, so that a simple digital CMOS process with nonlinear capacitors can be used to fabricate the proposed circuits. Simple equations for a numerical simulation of the circuits are derived. Moreover, results from numerical simulations and experiments with discrete elements are demonstrated.
ER -
English
