Nonlinear Resistor Circuits Using Capacitively Coupled Multi-Input MOSFETs
Summary :
A family of nonlinear resistor circuits with Λ and V-type I-V characteristics is proposed by using capacitively coupled multi-input MOSFETs. Their I-V characteristics can be easily altered by external control voltages. Moreover, the proposed circuits are fully compatible with a standard CMOS semiconductor process because only enhancement-type MOSFETs are necessary. Furthermore, nonlinear capacitors can be used for the capacitively coupled multi-input MOSFETs in the proposed circuits, so that a simple digital CMOS process with nonlinear capacitors can be used to fabricate the proposed circuits. Simple equations for a numerical simulation of the circuits are derived. Moreover, results from numerical simulations and experiments with discrete elements are demonstrated.
- Publication
- IEICE TRANSACTIONS on Fundamentals Vol.E82-A No.9 pp.1926-1936
- Publication Date
- 1999/09/25
- Publicized
- Online ISSN
- DOI
- Type of Manuscript
- PAPER
- Category
- Circuit Theory
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Yoshihiko HORIO, Ken'ichi WATARAI, Kazuyuki AIHARA, "Nonlinear Resistor Circuits Using Capacitively Coupled Multi-Input MOSFETs" in IEICE TRANSACTIONS on Fundamentals,
vol. E82-A, no. 9, pp. 1926-1936, September 1999, doi: .
Abstract: A family of nonlinear resistor circuits with Λ and V-type I-V characteristics is proposed by using capacitively coupled multi-input MOSFETs. Their I-V characteristics can be easily altered by external control voltages. Moreover, the proposed circuits are fully compatible with a standard CMOS semiconductor process because only enhancement-type MOSFETs are necessary. Furthermore, nonlinear capacitors can be used for the capacitively coupled multi-input MOSFETs in the proposed circuits, so that a simple digital CMOS process with nonlinear capacitors can be used to fabricate the proposed circuits. Simple equations for a numerical simulation of the circuits are derived. Moreover, results from numerical simulations and experiments with discrete elements are demonstrated.
URL: https://global.ieice.org/en_transactions/fundamentals/10.1587/e82-a_9_1926/_p
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@ARTICLE{e82-a_9_1926,
author={Yoshihiko HORIO, Ken'ichi WATARAI, Kazuyuki AIHARA, },
journal={IEICE TRANSACTIONS on Fundamentals},
title={Nonlinear Resistor Circuits Using Capacitively Coupled Multi-Input MOSFETs},
year={1999},
volume={E82-A},
number={9},
pages={1926-1936},
abstract={A family of nonlinear resistor circuits with Λ and V-type I-V characteristics is proposed by using capacitively coupled multi-input MOSFETs. Their I-V characteristics can be easily altered by external control voltages. Moreover, the proposed circuits are fully compatible with a standard CMOS semiconductor process because only enhancement-type MOSFETs are necessary. Furthermore, nonlinear capacitors can be used for the capacitively coupled multi-input MOSFETs in the proposed circuits, so that a simple digital CMOS process with nonlinear capacitors can be used to fabricate the proposed circuits. Simple equations for a numerical simulation of the circuits are derived. Moreover, results from numerical simulations and experiments with discrete elements are demonstrated.},
keywords={},
doi={},
ISSN={},
month={September},}
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TY - JOUR
TI - Nonlinear Resistor Circuits Using Capacitively Coupled Multi-Input MOSFETs
T2 - IEICE TRANSACTIONS on Fundamentals
SP - 1926
EP - 1936
AU - Yoshihiko HORIO
AU - Ken'ichi WATARAI
AU - Kazuyuki AIHARA
PY - 1999
DO -
JO - IEICE TRANSACTIONS on Fundamentals
SN -
VL - E82-A
IS - 9
JA - IEICE TRANSACTIONS on Fundamentals
Y1 - September 1999
AB - A family of nonlinear resistor circuits with Λ and V-type I-V characteristics is proposed by using capacitively coupled multi-input MOSFETs. Their I-V characteristics can be easily altered by external control voltages. Moreover, the proposed circuits are fully compatible with a standard CMOS semiconductor process because only enhancement-type MOSFETs are necessary. Furthermore, nonlinear capacitors can be used for the capacitively coupled multi-input MOSFETs in the proposed circuits, so that a simple digital CMOS process with nonlinear capacitors can be used to fabricate the proposed circuits. Simple equations for a numerical simulation of the circuits are derived. Moreover, results from numerical simulations and experiments with discrete elements are demonstrated.
ER -
English
