IEICE TRANSACTIONS on Fundamentals
Modeling and Parameter Extraction Technique for Uni-Directional HV MOS Devices
Summary :
This paper presents a new technique for accurately modeling uni-directional High-Voltage lightly-doped- drain MOS (HV MOS) devices by extending the bi- directional HV MOS model and adopting a new parameter extraction method. We have already reported on a SPICE model for bi-directional HV MOS devices based on BSIM3v3. However, if we apply this bi- directional HV MOS model and its parameter extraction technique directly to uni-directional HV MOS devices, there are large discrepancies between the measured and simulated I-V characteristics of the uni- directional devices. This paper extends the bi- directional HV MOS model, and adopts a new parameter extraction technique. Using parameters extracted with the new method, the simulated I-V characteristics of the uni-directional n-channel HV MOS device match the measured results well. Since our method does not change any model equations of BSIM3v3, it can be applied to any SPICE simulator on which the BSIM3v3 model runs.
- Publication
- IEICE TRANSACTIONS on Fundamentals Vol.E83-A No.3 pp.412-420
- Publication Date
- 2000/03/25
- Publicized
- Online ISSN
- DOI
- Type of Manuscript
- Special Section PAPER (Special Section of Selected Papers from the 12th Workshop on Circuits and Systems in Karuizawa)
- Category
Authors
Takao MYONO
Eiji NISHIBE
Shuichi KIKUCHI
Katsuhiko IWATSU
Takuya SUZUKI
Yoshisato SASAKI
Kazuo ITOH
Haruo KOBAYASHI
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Takao MYONO, Eiji NISHIBE, Shuichi KIKUCHI, Katsuhiko IWATSU, Takuya SUZUKI, Yoshisato SASAKI, Kazuo ITOH, Haruo KOBAYASHI, "Modeling and Parameter Extraction Technique for Uni-Directional HV MOS Devices" in IEICE TRANSACTIONS on Fundamentals,
vol. E83-A, no. 3, pp. 412-420, March 2000, doi: .
Abstract: This paper presents a new technique for accurately modeling uni-directional High-Voltage lightly-doped- drain MOS (HV MOS) devices by extending the bi- directional HV MOS model and adopting a new parameter extraction method. We have already reported on a SPICE model for bi-directional HV MOS devices based on BSIM3v3. However, if we apply this bi- directional HV MOS model and its parameter extraction technique directly to uni-directional HV MOS devices, there are large discrepancies between the measured and simulated I-V characteristics of the uni- directional devices. This paper extends the bi- directional HV MOS model, and adopts a new parameter extraction technique. Using parameters extracted with the new method, the simulated I-V characteristics of the uni-directional n-channel HV MOS device match the measured results well. Since our method does not change any model equations of BSIM3v3, it can be applied to any SPICE simulator on which the BSIM3v3 model runs.
URL: https://global.ieice.org/en_transactions/fundamentals/10.1587/e83-a_3_412/_p
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@ARTICLE{e83-a_3_412,
author={Takao MYONO, Eiji NISHIBE, Shuichi KIKUCHI, Katsuhiko IWATSU, Takuya SUZUKI, Yoshisato SASAKI, Kazuo ITOH, Haruo KOBAYASHI, },
journal={IEICE TRANSACTIONS on Fundamentals},
title={Modeling and Parameter Extraction Technique for Uni-Directional HV MOS Devices},
year={2000},
volume={E83-A},
number={3},
pages={412-420},
abstract={This paper presents a new technique for accurately modeling uni-directional High-Voltage lightly-doped- drain MOS (HV MOS) devices by extending the bi- directional HV MOS model and adopting a new parameter extraction method. We have already reported on a SPICE model for bi-directional HV MOS devices based on BSIM3v3. However, if we apply this bi- directional HV MOS model and its parameter extraction technique directly to uni-directional HV MOS devices, there are large discrepancies between the measured and simulated I-V characteristics of the uni- directional devices. This paper extends the bi- directional HV MOS model, and adopts a new parameter extraction technique. Using parameters extracted with the new method, the simulated I-V characteristics of the uni-directional n-channel HV MOS device match the measured results well. Since our method does not change any model equations of BSIM3v3, it can be applied to any SPICE simulator on which the BSIM3v3 model runs.},
keywords={},
doi={},
ISSN={},
month={March},}
Copy
TY - JOUR
TI - Modeling and Parameter Extraction Technique for Uni-Directional HV MOS Devices
T2 - IEICE TRANSACTIONS on Fundamentals
SP - 412
EP - 420
AU - Takao MYONO
AU - Eiji NISHIBE
AU - Shuichi KIKUCHI
AU - Katsuhiko IWATSU
AU - Takuya SUZUKI
AU - Yoshisato SASAKI
AU - Kazuo ITOH
AU - Haruo KOBAYASHI
PY - 2000
DO -
JO - IEICE TRANSACTIONS on Fundamentals
SN -
VL - E83-A
IS - 3
JA - IEICE TRANSACTIONS on Fundamentals
Y1 - March 2000
AB - This paper presents a new technique for accurately modeling uni-directional High-Voltage lightly-doped- drain MOS (HV MOS) devices by extending the bi- directional HV MOS model and adopting a new parameter extraction method. We have already reported on a SPICE model for bi-directional HV MOS devices based on BSIM3v3. However, if we apply this bi- directional HV MOS model and its parameter extraction technique directly to uni-directional HV MOS devices, there are large discrepancies between the measured and simulated I-V characteristics of the uni- directional devices. This paper extends the bi- directional HV MOS model, and adopts a new parameter extraction technique. Using parameters extracted with the new method, the simulated I-V characteristics of the uni-directional n-channel HV MOS device match the measured results well. Since our method does not change any model equations of BSIM3v3, it can be applied to any SPICE simulator on which the BSIM3v3 model runs.
ER -
English
